公开(公告)号：US09064848B2

公开(公告)日：2015-06-23

申请号：US14531650

申请日：2014-11-03

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Xiang Hu ,  Richard S. Wise ,  Habib Hichri ,  Catherine Labelle

IPC分类号： H01L21/3213 ,  H01L21/311 ,  H01L23/48 ,  H01L27/11 ,  H01L21/3105

CPC分类号： H01L23/48 ,  H01L21/31055 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/3213 ,  H01L21/32139 ,  H01L27/11 ,  H01L2924/0002 ,  H01L2924/00

摘要： Antireflective residues during pattern transfer and consequential short circuiting are eliminated by employing an underlying sacrificial layer to ensure complete removal of the antireflective layer. Embodiments include forming a hard mask layer over a conductive layer, e.g., a silicon substrate, forming the sacrificial layer over the hard mask layer, forming an optical dispersive layer over the sacrificial layer, forming a silicon anti-reflective coating layer over the optical dispersive layer, forming a photoresist layer over the silicon anti-reflective coating layer, where the photoresist layer defines a pattern, etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer.

摘要翻译： 在图案转印和后续短路过程中的抗反射残余物通过使用下面的牺牲层来确保完全去除抗反射层而消除。 实施例包括在导电层（例如硅衬底）上形成硬掩模层，在硬掩模层上形成牺牲层，在牺牲层上形成光学色散层，在光学色散上形成硅抗反射涂层 在硅抗反射涂层上形成光致抗蚀剂层，其中光致抗蚀剂层限定图案，蚀刻以将图案转移到硬掩模层，以及剥离至少光学色散层和牺牲层。