公开(公告)号：US20220059691A1

公开(公告)日：2022-02-24

申请号：US16996010

申请日：2020-08-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yanping Shen ,  Haiting Wang ,  Zhiqing Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: Disclosed is a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a replacement metal gate (RMG) structure that includes a first section, which traverses a semiconductor body at a channel region in a first-type well, and a second section, which is adjacent to the first section and which traverses the semiconductor body at a drain drift region in a second-type well. The RMG structure includes, in both sections, a first-type work function layer and a second-type work function layer on the first-type work function layer. However, the thickness of the first-type work function layer in the first section is greater than the thickness in the second section such that the RMG structure is asymmetric. Thus, threshold voltage (Vt) at the first section is greater than Vt at the second section and the LDMOSFET has a relatively high breakdown voltage (BV). Also disclosed are methods for forming the LDMOSFET.

公开(公告)号：US20220115864A1

公开(公告)日：2022-04-14

申请号：US17068967

申请日：2020-10-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anindya Nath ,  Zhiqing Li ,  Souvick Mitra ,  Alain Loiseau ,  Wei Liang

IPC: H02H9/04 ,  H01L27/02

Abstract: Embodiments of the disclosure provide an electrostatic discharge (ESD) device, including: an input pad; an underlapped field effect transistor (UL-FET) with a trigger voltage Vt, including: an underlapped drain region coupled to the input pad; a source region coupled to ground; and a gate structure coupled to the input pad; and a blocking layer separating the underlapped drain region from the gate structure of the UL-FET by an underlap distance.

公开(公告)号：US11855074B2

公开(公告)日：2023-12-26

申请号：US17170325

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhiqing Li ,  William J. Taylor, Jr. ,  Anindya Nath

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge devices and methods of manufacture. The structure includes: a plurality of regions of a first dopant type; insulator material separating each region of the plurality of regions of the first dopant type; and a substrate contacting the plurality of regions of the first dopant type, the substrate comprising a base region of a second dopant type different than the first dopant type and an outer segment surrounding the plurality of regions of the first dopant type, the outer segment comprises an electrical resistivity higher than the second dopant type.

公开(公告)号：US11658480B2

公开(公告)日：2023-05-23

申请号：US17068967

申请日：2020-10-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anindya Nath ,  Zhiqing Li ,  Souvick Mitra ,  Alain Loiseau ,  Wei Liang

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0266

Abstract: Embodiments of the disclosure provide an electrostatic discharge (ESD) device, including: an input pad; an underlapped field effect transistor (UL-FET) with a trigger voltage Vt, including: an underlapped drain region coupled to the input pad; a source region coupled to ground; and a gate structure coupled to the input pad; and a blocking layer separating the underlapped drain region from the gate structure of the UL-FET by an underlap distance.

公开(公告)号：US11342453B2

公开(公告)日：2022-05-24

申请号：US16996010

申请日：2020-08-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yanping Shen ,  Haiting Wang ,  Zhiqing Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423

Abstract: Disclosed is a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a replacement metal gate (RMG) structure that includes a first section, which traverses a semiconductor body at a channel region in a first-type well, and a second section, which is adjacent to the first section and which traverses the semiconductor body at a drain drift region in a second-type well. The RMG structure includes, in both sections, a first-type work function layer and a second-type work function layer on the first-type work function layer. However, the thickness of the first-type work function layer in the first section is greater than the thickness in the second section such that the RMG structure is asymmetric. Thus, threshold voltage (Vt) at the first section is greater than Vt at the second section and the LDMOSFET has a relatively high breakdown voltage (BV). Also disclosed are methods for forming the LDMOSFET.