公开(公告)号：US20200313260A1

公开(公告)日：2020-10-01

申请号：US16363527

申请日：2019-03-25

Applicant: GM Global Technology Operations LLC

Inventor： Bao Wang ,  Andrew K. Chandler ,  David P. Tasky ,  Karl C. Dorgan ,  Robert J. Heydel

IPC: H01M10/6554 ,  H01M2/10 ,  H01M10/613 ,  H01M10/6556 ,  H01M10/625 ,  H01M2/34

Abstract: A cooling system for a rechargeable energy system includes a plurality of bus bars, a cooling plate configured for cooling the plurality of bus bars and disposed in a thermally-conductive relationship with a portion of each of the plurality of bus bars, and an isolation component disposed between and in contact with the cooling plate and each of the plurality of bus bars. A rechargeable energy storage system and device are also described.

公开(公告)号：US20160334280A1

公开(公告)日：2016-11-17

申请号：US14709782

申请日：2015-05-12

Applicant: GM Global Technology Operations LLC

Inventor： S.M. Nayeem Hasan ,  Bryan M. Ludwig ,  David P. Tasky

IPC: G01K7/01 ,  H01L27/06 ,  H01L29/739

CPC classification number: G01K7/01 ,  G01K7/427 ,  G01K2217/00 ,  H01L29/7397

Abstract: A number of variations may include a method which may include determining a temperature rise in an IGBT junction without the use of a temperature estimation or measurement device because determination may be made by first determining the power loss due to the conduction losses of the IGBT and power loss associated with switching the IGBT where these losses may be determined by utilizing the saturation voltage of the IGBT, IGBT PWM duty cycle, IGBT switching frequency, fundamental frequency along with a lookup table for the switching energies and the phase current going through the IGBT. The determined power loss may be multiplied by a measured, sensed or obtained thermal impedance from the IGBT junction. Finally, the determined temperature rise of the IGBT junction may be added to a measured, sensed or obtained temperature of the coolant in order to determine the absolute temperature of the IGBT junction.

Abstract translation: 许多变型可以包括一种方法，其可以包括在不使用温度估计或测量装置的情况下确定IGBT结中的温度升高，因为可以通过首先确定由于IGBT的导通损耗和功率而导致的功率损耗 通过利用IGBT的饱和电压，IGBT PWM占空比，IGBT开关频率，基波频率以及开关能量和通过IGBT的相电流的查找表可以确定这些损耗与IGBT的切换相关的损耗。 所确定的功率损耗可以乘以来自IGBT结的测量，感测或获得的热阻抗。 最后，为了确定IGBT结的绝对温度，可以将确定的IGBT结的温度上升加到测量的，感测的或获得的冷却剂温度上。

公开(公告)号：US10978755B2

公开(公告)日：2021-04-13

申请号：US16363527

申请日：2019-03-25

Applicant: GM Global Technology Operations LLC

Inventor： Bao Wang ,  Andrew K. Chandler ,  David P. Tasky ,  Karl C. Dorgan ,  Robert J. Heydel

IPC: H01M10/6554 ,  H01M2/10 ,  H01M10/613 ,  H01M10/625 ,  H01M2/34 ,  H01M10/6556

Abstract: A cooling system for a rechargeable energy system includes a plurality of bus bars, a cooling plate configured for cooling the plurality of bus bars and disposed in a thermally-conductive relationship with a portion of each of the plurality of bus bars, and an isolation component disposed between and in contact with the cooling plate and each of the plurality of bus bars. A rechargeable energy storage system and device are also described.

公开(公告)号：US10337930B2

公开(公告)日：2019-07-02

申请号：US14709782

申请日：2015-05-12

Applicant: GM Global Technology Operations LLC

Inventor： S. M. Nayeem Hasan ,  Bryan M. Ludwig ,  David P. Tasky

IPC: G01K7/01 ,  H01L29/739 ,  G01K7/42

Abstract: A number of variations may include a method which may include determining a temperature rise in an IGBT junction without the use of a temperature estimation or measurement device because determination may be made by first determining the power loss due to the conduction losses of the IGBT and power loss associated with switching the IGBT where these losses may be determined by utilizing the saturation voltage of the IGBT, IGBT PWM duty cycle, IGBT switching frequency, fundamental frequency along with a lookup table for the switching energies and the phase current going through the IGBT. The determined power loss may be multiplied by a measured, sensed or obtained thermal impedance from the IGBT junction. Finally, the determined temperature rise of the IGBT junction may be added to a measured, sensed or obtained temperature of the coolant in order to determine the absolute temperature of the IGBT junction.