公开(公告)号：US09518319B2

公开(公告)日：2016-12-13

申请号：US14203182

申请日：2014-03-10

Applicant: Intermolecular Inc. ,  Guardian Industries Corp.

Inventor： Guowen Ding ,  Jeremy Cheng ,  Tong Ju ,  Minh Huu Le ,  Daniel Schweigert ,  Zhi-Wen Sun ,  Yongli Xu ,  Guizhen Zhang

IPC: B32B15/04 ,  B32B17/06 ,  C23C14/08 ,  G02F1/09 ,  B29D11/00 ,  G02B5/26 ,  C03C17/36 ,  C23C14/14 ,  E06B9/24

CPC classification number: G02B5/208 ,  B29D11/00865 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C03C23/007 ,  C03C2217/43 ,  C03C2217/48 ,  C03C2218/154 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  G02B5/26 ,  G02F1/091 ,  G02F2001/094 ,  Y10T428/24975 ,  Y10T428/265

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. A first dielectric layer is disposed over a substrate and includes a bi-metal oxide having tin and bismuth or niobium. A seed layer is disposed directly on the first dielectric layer. A reflective layer including silver is disposed directly on the seed layer. A barrier layer is disposed above the reflective layer. The barrier layer includes one of a nickel chromium titanium aluminum alloy or a nickel chromium titanium aluminum oxide. The nickel chromium titanium aluminum alloy or the nickel chromium titanium aluminum oxide includes between about 5% and about 10% by weight nickel, between about 25% and about 30% by weight chromium, between about 30% and about 35% by weight titanium, and between about 30% and about 35% by weight aluminum.

Abstract translation: 本文公开了用于形成低发射率面板的系统，方法和装置。 第一电介质层设置在衬底上并且包括具有锡和铋或铌的双金属氧化物。 种子层直接设置在第一介电层上。 包括银的反射层直接设置在种子层上。 阻挡层设置在反射层上。 阻挡层包括镍铬钛铝合金或镍铬钛氧化铝中的一种。 镍铬钛铝合金或镍铬钛铝氧化物包括约5重量％至约10重量％的镍，约25重量％至约30重量％的铬，约30重量％至约35重量％的钛， 和约30重量％至约35重量％的铝。

公开(公告)号：US09790127B2

公开(公告)日：2017-10-17

申请号：US13804766

申请日：2013-03-14

Applicant: INTERMOLECULAR INC. ,  GUARDIAN INDUSTRIES CORP.

Inventor： Guowen Ding ,  Jeremy Cheng ,  Tong Ju ,  Minh Huu Le ,  Phil Lingle ,  Daniel Schweigert ,  Zhi-Wen Wen Sun ,  Guizhen Zhang

IPC: C03C17/36

CPC classification number: C03C17/366 ,  C03C17/36 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/3652 ,  Y10T428/24975 ,  Y10T428/265

Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.

公开(公告)号：US09739915B2

公开(公告)日：2017-08-22

申请号：US14144915

申请日：2013-12-31

Applicant: GUARDIAN INDUSTRIES CORP.

Inventor： Guowen Ding ,  Jeremy Cheng ,  Muhammad Imran ,  Minh Huu Le ,  Daniel Schweigert ,  Yongli Xu ,  Guizhen Zhang

IPC: C23C14/00 ,  C23C14/32 ,  G02B5/20 ,  G02F1/09 ,  B29D11/00 ,  G02B5/26 ,  C03C17/36 ,  C23C14/08 ,  C23C14/14 ,  E06B9/24 ,  C03C23/00 ,  C23C14/22

CPC classification number: G02B5/208 ,  B29D11/00865 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C03C23/007 ,  C03C2217/43 ,  C03C2217/48 ,  C03C2218/154 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  G02B5/26 ,  G02F1/091 ,  G02F2001/094 ,  Y10T428/24975 ,  Y10T428/265

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

公开(公告)号：US09703024B2

公开(公告)日：2017-07-11

申请号：US15346884

申请日：2016-11-09

Applicant: Intermolecular Inc. ,  Guardian Industries Corp.

Inventor： Guizhen Zhang ,  Brent Boyce ,  Jeremy Cheng ,  Guowen Ding ,  Muhammad Imran ,  Daniel Schweigert ,  Yongli Xu

IPC: G02B5/20 ,  C03C17/36 ,  C03C23/00 ,  C23C14/08 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  G02B5/26

CPC classification number: G02B5/208 ,  B29D11/00865 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C03C23/007 ,  C03C2217/43 ,  C03C2217/48 ,  C03C2218/154 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  G02B5/26 ,  G02F1/091 ,  G02F2001/094 ,  Y10T428/24975 ,  Y10T428/265

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

公开(公告)号：US09499899B2

公开(公告)日：2016-11-22

申请号：US14139350

申请日：2013-12-23

Applicant: INTERMOLECULAR INC. ,  Guardian Industries Corp.

Inventor： Guizhen Zhang ,  Brent Boyce ,  Jeremy Cheng ,  Guowen Ding ,  Muhammad Imran ,  Minh Huu Le ,  Daniel Schweigert ,  Yongli Xu

IPC: C23C14/08 ,  C03C17/36 ,  G02B5/26 ,  E06B9/24 ,  G02F1/09 ,  B29D11/00 ,  C23C14/14

CPC classification number: G02B5/208 ,  B29D11/00865 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C03C23/007 ,  C03C2217/43 ,  C03C2217/48 ,  C03C2218/154 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  G02B5/26 ,  G02F1/091 ,  G02F2001/094 ,  Y10T428/24975 ,  Y10T428/265

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract translation: 本文公开了用于形成低辐射率面板的系统，方法和装置，其可以包括衬底和形成在衬底上的反射层。 低发射率面板还可以包括在反射层上形成的顶部电介质层，使得反射层形成在顶部电介质层和衬底之间。 顶部介电层可以包括三元金属氧化物，例如锌锡氧化铝。 顶部电介质层也可以包括铝。 铝的浓度可以在约1原子％至15原子％之间或约2原子％至10原子％之间。 顶部电介质层中锌与锡的原子比可以在约0.67至约1.5之间或约0.9至约1.1之间。