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1.发明授权公开(公告)号：US09518319B2
公开(公告)日：2016-12-13
申请号：US14203182
申请日：2014-03-10
Applicant: Intermolecular Inc. , Guardian Industries Corp.
Inventor： Guowen Ding , Jeremy Cheng , Tong Ju , Minh Huu Le , Daniel Schweigert , Zhi-Wen Sun , Yongli Xu , Guizhen Zhang
IPC: B32B15/04 , B32B17/06 , C23C14/08 , G02F1/09 , B29D11/00 , G02B5/26 , C03C17/36 , C23C14/14 , E06B9/24
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. A first dielectric layer is disposed over a substrate and includes a bi-metal oxide having tin and bismuth or niobium. A seed layer is disposed directly on the first dielectric layer. A reflective layer including silver is disposed directly on the seed layer. A barrier layer is disposed above the reflective layer. The barrier layer includes one of a nickel chromium titanium aluminum alloy or a nickel chromium titanium aluminum oxide. The nickel chromium titanium aluminum alloy or the nickel chromium titanium aluminum oxide includes between about 5% and about 10% by weight nickel, between about 25% and about 30% by weight chromium, between about 30% and about 35% by weight titanium, and between about 30% and about 35% by weight aluminum.
Abstract translation: 本文公开了用于形成低发射率面板的系统，方法和装置。 第一电介质层设置在衬底上并且包括具有锡和铋或铌的双金属氧化物。 种子层直接设置在第一介电层上。 包括银的反射层直接设置在种子层上。 阻挡层设置在反射层上。 阻挡层包括镍铬钛铝合金或镍铬钛氧化铝中的一种。 镍铬钛铝合金或镍铬钛铝氧化物包括约5重量％至约10重量％的镍，约25重量％至约30重量％的铬，约30重量％至约35重量％的钛， 和约30重量％至约35重量％的铝。
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公开(公告)号：US09703024B2
公开(公告)日：2017-07-11
申请号：US15346884
申请日：2016-11-09
Applicant: Intermolecular Inc. , Guardian Industries Corp.
Inventor： Guizhen Zhang , Brent Boyce , Jeremy Cheng , Guowen Ding , Muhammad Imran , Daniel Schweigert , Yongli Xu
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
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3.发明授权Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy 有权包括三元合金在内的低辐射玻璃生产涂料的系统，方法和装置公开(公告)号：US09499899B2
公开(公告)日：2016-11-22
申请号：US14139350
申请日：2013-12-23
Applicant: INTERMOLECULAR INC. , Guardian Industries Corp.
Inventor： Guizhen Zhang , Brent Boyce , Jeremy Cheng , Guowen Ding , Muhammad Imran , Minh Huu Le , Daniel Schweigert , Yongli Xu
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
Abstract translation: 本文公开了用于形成低辐射率面板的系统，方法和装置，其可以包括衬底和形成在衬底上的反射层。 低发射率面板还可以包括在反射层上形成的顶部电介质层，使得反射层形成在顶部电介质层和衬底之间。 顶部介电层可以包括三元金属氧化物，例如锌锡氧化铝。 顶部电介质层也可以包括铝。 铝的浓度可以在约1原子％至15原子％之间或约2原子％至10原子％之间。 顶部电介质层中锌与锡的原子比可以在约0.67至约1.5之间或约0.9至约1.1之间。
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公开(公告)号：US09790127B2
公开(公告)日：2017-10-17
申请号：US13804766
申请日：2013-03-14
Applicant: INTERMOLECULAR INC. , GUARDIAN INDUSTRIES CORP.
Inventor： Guowen Ding , Jeremy Cheng , Tong Ju , Minh Huu Le , Phil Lingle , Daniel Schweigert , Zhi-Wen Wen Sun , Guizhen Zhang
IPC: C03C17/36
CPC classification number: C03C17/366 , C03C17/36 , C03C17/3639 , C03C17/3644 , C03C17/3652 , Y10T428/24975 , Y10T428/265
Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.
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公开(公告)号：US09739915B2
公开(公告)日：2017-08-22
申请号：US14144915
申请日：2013-12-31
Applicant: GUARDIAN INDUSTRIES CORP.
Inventor： Guowen Ding , Jeremy Cheng , Muhammad Imran , Minh Huu Le , Daniel Schweigert , Yongli Xu , Guizhen Zhang
IPC: C23C14/00 , C23C14/32 , G02B5/20 , G02F1/09 , B29D11/00 , G02B5/26 , C03C17/36 , C23C14/08 , C23C14/14 , E06B9/24 , C03C23/00 , C23C14/22
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
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Patent Agency Ranking
公开(公告)号：US09405046B2
公开(公告)日：2016-08-02
申请号：US13799100
申请日：2013-03-13
Applicant: Intermolecular Inc.
Inventor： Guowen Ding , Jeremy Cheng , Minh Huu Le , Daniel Schweigert , Zhi-Wen Sun , Guizhen Zhang
CPC classification number: G02B5/208 , C03C17/36 , C03C17/3644 , C03C17/366 , G02B5/281
Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material.
Abstract translation: 本文提供的实施例描述了用于形成低e板的低e板和方法。 提供透明基板。 在透明基板的上方形成反射层。 在反射层上方形成覆盖层。 覆盖层包括第一，第二和第三子层。 第二子层位于第一和第三子层之间，第一和第三子层包括相同的材料。
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7.发明申请SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS 有权低功率玻璃生产涂料的系统，方法和装置公开(公告)号：US20140322507A1
公开(公告)日：2014-10-30
申请号：US14144915
申请日：2013-12-31
Applicant: Intermolecular Inc.
Inventor： Guowen Ding , Jeremy Cheng , Muhammad Imran , Minh Huu Le , Daniel Schweigert , Yongli Xu , Guizhen Zhang
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
Abstract translation: 本文公开了用于形成低发射率面板的系统，方法和装置。 在一些实施例中，可以提供部分制造的面板，其包括衬底，在衬底上形成的反射层，以及形成在反射层上的阻挡层，使得反射层形成在衬底和阻挡层之间。 阻挡层可以包括三种或更多种金属的部分氧化的合金。 可以在阻挡层上方形成第一界面层。 可以在第一界面层上形成顶部电介质层。 可以在含氧环境中使用反应性溅射形成顶部电介质层。 当形成顶部电介质层时，第一界面层可以防止三种或更多种金属的部分氧化的合金的进一步氧化。 可以在顶部介电层上方形成第二界面层。
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公开(公告)号：US20140272353A1
公开(公告)日：2014-09-18
申请号：US13801465
申请日：2013-03-13
Applicant: INTERMOLECULAR INC.
Inventor： Guowen Ding , Jeremy Cheng , Tong Ju , Minh Huu Le , Daniel Schweigert , Guizhen Zhang
CPC classification number: G02B1/10 , C03C17/3615 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C2217/256 , G02B5/282 , G02B5/285 , Y10T428/24975 , Y10T428/265
Abstract: Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.
Abstract translation: 低发射率面板可以包括在Zn2SnOx层上的ZnO层上的氮化硅保护层。 低辐射面板还可以包括NiNbTiOx作为阻挡层。 低辐射面板在热处理过程之前和之后具有高的太阳光增益，颜色中性以及类似的可观察到的颜色和光透射。
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9.发明授权Barrier layers for silver reflective coatings and HPC workflows for rapid screening of materials for such barrier layers 有权用于银反射涂层的阻隔层和用于快速筛选这种阻挡层的材料的HPC工作流程公开(公告)号：US09127348B2
公开(公告)日：2015-09-08
申请号：US14574755
申请日：2014-12-18
Applicant: Intermolecular Inc.
Inventor： Guizhen Zhang , Jeremy Cheng , Guowen Ding , Minh Huu Le , Daniel Schweigert , Yu Wang
IPC: B32B15/04 , B32B17/06 , C23C14/08 , C23C14/22 , C03C17/36 , C23C14/14 , C23C14/00 , C23C14/04 , C23C14/34
CPC classification number: C23C14/22 , C03C17/36 , C03C17/3605 , C03C17/3618 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C23C14/0036 , C23C14/042 , C23C14/14 , C23C14/34 , G02B1/12 , G02B1/14 , Y10T428/12542 , Y10T428/12549 , Y10T428/12611 , Y10T428/12778 , Y10T428/31678
Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.
Abstract translation: 提供了半导体衬底的高生产率组合（HPC）测试方法，每个包括多个现场隔离区域。 位置隔离区域用于测试布置在银反射器上的阻挡层的不同组成和/或结构。 经测试的阻挡层可以包括镍，铬，钛和铝中的全部或至少两种。 在一些实施例中，阻挡层包括氧。 该组合允许使用具有高透明度的相对薄的阻挡层（例如5-30埃厚），同时为银反射器提供足够的保护。 阻挡层中的镍的量可以是5-10重量％，铬25-30％，钛和铝30％-35％。 阻挡层可以在反应性或惰性环境中使用包括所有四种金属的一种或多种目标共溅射。 物品可以包括多个银反射器，每个具有其自己的阻挡层。
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公开(公告)号：US20150093898A1
公开(公告)日：2015-04-02
申请号：US14562952
申请日：2014-12-08
Applicant: Intermolecular, Inc.
Inventor： Rick Endo , Jeremy Cheng , Indranil De , James Tsung , Kurt Weiner , Maosheng Zhao
IPC: H01L21/3205
CPC classification number: H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.
Abstract translation: 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。
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