High speed electron tunneling device and applications
    1.
    发明授权
    High speed electron tunneling device and applications 有权
    高速电子隧道装置及其应用

    公开(公告)号:US06756649B2

    公开(公告)日:2004-06-29

    申请号:US10347534

    申请日:2003-01-20

    IPC分类号: H01L2982

    摘要: A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there across, and a second arrangement between the first and second non-insulating layers. The second arrangement includes a first amorphous layer configured such that a transport of electrons between the first and second non-insulating layers includes tunneling. The first arrangement further includes an antenna structure for absorbing part of an input radiation, while a remainder of the input radiation is reflected. The second arrangement cooperates with the first arrangement such that the antenna exhibits a first absorptivity, when a first modulation voltage is applied to the first arrangement, and exhibits a distinct, second absorptivity, when a second modulation voltage is applied, thereby causing the antenna to reflect a different amount of input radiation to an output as modulated radiation.

    摘要翻译: 调制器包括电压源,第一装置包括第一和第二非绝缘层,第一和第二非绝缘层被配置成使得来自电压源的调制电压可以在其上施加,并且第一和第二非绝缘层之间的第二布置。 第二布置包括第一非晶层,其被配置为使得在第一和第二非绝缘层之间的电子传输包括隧穿。 第一布置还包括用于吸收输入辐射的一部分的天线结构,而反射输入辐射的其余部分。 第二布置与第一布置配合,使得当施加第一调制电压时,天线呈现第一吸收率,并且当施加第二调制电压时,其呈现明显的第二吸收率,从而使天线 将不同数量的输入辐射反射为输出作为调制辐射。

    High speed electron tunneling devices
    2.
    发明授权
    High speed electron tunneling devices 有权
    高速电子隧道装置

    公开(公告)号:US07595500B2

    公开(公告)日:2009-09-29

    申请号:US11503585

    申请日:2006-08-14

    IPC分类号: H01L29/08

    摘要: A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

    摘要翻译: 检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层,其间隔开,使得偏置电压可以在其间施加,并形成用于接收电磁辐射的天线,并将其引导到位于 探测器。 当在天线处接收到电磁辐射时,检测器还包括用作电子传输的装置,包括隧穿,并在第一和第二非绝缘层之间和之间。 该布置包括第一绝缘层和第二层,其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值,而包含第二层的非线性增加了高于给定值的非线性。 入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

    Device integrated antenna for use in resonant and non-resonant modes and method

    公开(公告)号:US06664562B2

    公开(公告)日:2003-12-16

    申请号:US10265935

    申请日:2002-10-05

    IPC分类号: H01L2906

    摘要: An assembly includes a device for receiving at least one input to produce an output. An antenna arrangement supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna arrangement supports a selected one of the input and the output as a high frequency current. The antenna includes a peripheral configuration which confines high frequency current to at least one dominant path to oscillate in the dominant path and the other one of the input and the output is a lower frequency signal present at least generally throughout the antenna arrangement. At least one port is positioned sufficiently away from the dominant path to isolate the lower frequency signal from surface current in the dominant path. The assembly is usable in modulation, emitting, mixing and detection modes and may include a resonant or non-resonant configuration.

    High speed electron tunneling devices

    公开(公告)号:US07105852B2

    公开(公告)日:2006-09-12

    申请号:US10877874

    申请日:2004-06-26

    IPC分类号: H01L29/06

    摘要: A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

    Terahertz device integrated antenna for use in resonant and non-resonant modes and method
    5.
    发明授权
    Terahertz device integrated antenna for use in resonant and non-resonant modes and method 有权
    太赫兹器件集成天线用于谐振和非谐振模式和方法

    公开(公告)号:US06835949B2

    公开(公告)日:2004-12-28

    申请号:US10651398

    申请日:2003-08-29

    IPC分类号: H01L2906

    CPC分类号: H02S99/00

    摘要: An assembly includes a device for receiving at least one input to produce an output. An antenna supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna supports a selected one of the input and the output as a high frequency current. The antenna includes a peripheral configuration which confines high frequency current to at least one dominant path to oscillate therein. The other one of the input and the output is a lower frequency signal present at least generally throughout the antenna. At least one port is positioned away from the dominant path to isolate the lower frequency signal from high frequency current in the dominant path. The antenna is configured to support the lower frequency signal having a frequency in a low frequency range including zero to several terahertz.

    摘要翻译: 组件包括用于接收至少一个输入以产生输出的装置。 天线支持设备将输入传送到设备,并且进一步传输来自设备的输出,使得天线将输入和输出中的所选择的一个支持为高频电流。 天线包括将高频电流限制在至少一个主要路径以在其中振荡的外围配置。 输入和输出中的另一个是至少通常遍及整个天线的低频信号。 至少一个端口位于远离主路径的位置,以将较低频率信号与主流路径中的高频电流隔离。 天线被配置为支持具有包括零到几个太赫兹的低频范围内的频率的低频信号。

    Method for fabricating a metal-oxide electron tunneling device for solar energy conversion
    6.
    发明授权
    Method for fabricating a metal-oxide electron tunneling device for solar energy conversion 有权
    太阳能转换金属氧化物电子隧穿装置的制造方法

    公开(公告)号:US06762071B2

    公开(公告)日:2004-07-13

    申请号:US10348060

    申请日:2003-01-20

    IPC分类号: H01L2100

    摘要: A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further includes the steps of providing a second layer, and forming a second non-insulating layer and providing an antenna structure connected with the first and second non-insulating layers. The second layer of material is configured to cooperate with the first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non-insulating layers, and the transport of electrons includes, at least in part, transport by means of tunneling.

    摘要翻译: 在基板上制造电子隧穿装置的方法包括在基板上形成第一非绝缘层并提供第一非晶层。 该方法还包括提供第二层,以及形成第二非绝缘层并提供与第一和第二非绝缘层连接的天线结构的步骤。 第二层材料被配置为与第一非晶层配合,使得第一非晶层和第二材料层一起用作第一和第二非绝缘层之间的电子和第一和第二非绝缘层之间的电子传输,并且电子的传输 至少部分地通过隧道运输。

    Metal-oxide electron tunneling device for solar energy conversion

    公开(公告)号:US06534784B2

    公开(公告)日:2003-03-18

    申请号:US09860988

    申请日:2001-05-21

    IPC分类号: H01L2906

    摘要: The electron tunneling device includes first and second non-insulating layers spaced apart such that a given voltage can be provided therebetween. The device also includes an arrangement disposed between the non-insulating layers and configured to serve as a transport of electrons between the non-insulating layers. This arrangement includes a first layer of an amorphous material such that using only the first layer of amorphous material in the arrangement would result in a given value of a parameter in the transport of electrons, with respect to the given voltage. The arrangement further includes a second layer of material, which is configured to cooperate with the first layer of amorphous material such that the transport of electrons includes, at least in part, transport by tunneling, and such that the parameter, with respect to the given voltage, is increased above the given value of the parameter.

    Thin-film transistors based on tunneling structures and applications
    8.
    发明授权
    Thin-film transistors based on tunneling structures and applications 失效
    基于隧道结构和应用的薄膜晶体管

    公开(公告)号:US07173275B2

    公开(公告)日:2007-02-06

    申请号:US11113587

    申请日:2005-04-25

    IPC分类号: H01L29/06

    摘要: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

    摘要翻译: 热电子晶体管包括发射极,基极,集电极和第一隧道结构,其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层,使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

    High speed electron tunneling device and applications

    公开(公告)号:US06563185B2

    公开(公告)日:2003-05-13

    申请号:US09860972

    申请日:2001-05-21

    IPC分类号: H01L2982

    摘要: A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.