摘要:
An integrated optical transmitter for use in an optical system has an optical head assembly with an optical beam generator for providing an optical beam and a lens assembly collecting the optical beam and generating therefrom a formed optical beam. Interface optics receives the formed optical beam and provides optical coupling so as to minimize insertion loss to the optical beam. Also included is an optical modulator for receiving the optical beam from the interface optics and for providing a modulated optical beam in response to received modulation signals. The optical modulator is coupled to the interface optics to be in a fixed relationship therewith.
摘要:
An integrated optical transmitter for use in an optical system includes an optical head assembly having an optical beam generator for providing an optical beam and a lens assembly for collecting the optical beam and generating therefrom a formed optical beam. Interface optics receive the formed optical beam for coupling the beam to a modulator so as to reduce nsertion loss to the optical beam. The optical modulator receives the optical beam from the interface optics and provides a modulated optical beam in response to received modulation signals. The optical modulator is coupled to the interface optics to be in a fixed relationship therewith. The integrated optical transmitter can include a means for sampling the optical beam and controlling the temperature of and/or the current supplied to the optical beam generator for controlling the wavelength of the optical transmitter. The optical head assembly and the modulator can be compliantly mounted to a mounting surface reducing the effects of thermal stress on the performance of the optical transmitter.
摘要:
An integrated optical receiver/transmitter (transceiver) 8 has continuous wave (cw) light 16 that enters a Mach-Zehnder optical modulator 10 controlled by a modulator control circuit 12 that provides modulated light 30 along a waveguide 32 to an optical coupler 34 which couples a predetermined portion of the light 30 to a waveguide 44 as light 42 which then exits the transceiver from a port 46. Receive light 90 is accepted at the port 46 and travels along the waveguide 44 to the coupler 34 which couples a predetermined amount of the light 90 to a waveguide 70 as light 92 which is detected by a waveguide-integrated photodetector 72. The photodetector 72 provides a current signal on a line 74 to a receiver circuit 76 which provides a voltage signal indicative of the light 92. Alternatively, the coupler may be passive, thereby not requiring the coupler control circuit, or no coupler at all may be employed and two fibers used for communications with the transceiver 8.
摘要:
A method of fabricating an optical device incorporates two different techniques for formation of different structures of the device on the same substrate. Individual processes such as Titanium indiffusion and annealed proton exchange in LiNbO.sub.3 require significantly different temperature ranges for comparable waveguide formation. The present method combines these processes and allows for temperature tuning of the optical parameters of passive and active components, for instance coupling lengths of directional couplers, associated with one section of the device without altering the optical parameters of similar components in the other sections. The process improves yield for devices which employ more than one precisely fabricated optical directional coupler by creating an extra degree of process freedom.
摘要:
A single-side growth reflection-based photodetector includes a waveguide structure 8 comprising a "strip-loaded rib" waveguide 10 which accepts light 11 from an input end-face 7 and confines the light to a predetermined spatial optical mode 12. The light 11 propagates along the waveguide 10 and is internally reflected off an edge 18 of a retrograde angled region 20, at one end of the waveguide, to a detector layer 16 where the light 11 is absorbed, thereby creating electron-hole pairs in the detector layer 16. The absorbed light is detected by a metal-semiconductor-metal (MSM) detector comprising an interdigital electrode structure 14 disposed on the outer surface of the detector layer 16 which is disposed above a wide non-waveguide mesa layer 9. For 0.84 micron wavelength light, the detector layer 16 is made of GaAs. Alternatively, for 1.3-1.55 micron light, the detector layer 16 is made of InGaAs.