公开(公告)号：US20100090211A1

公开(公告)日：2010-04-15

申请号：US12639274

申请日：2009-12-16

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L51/10 ,  H01L33/00

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US20080316410A1

公开(公告)日：2008-12-25

申请号：US12133160

申请日：2008-06-04

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： G02F1/1343

CPC分类号： H01L51/0021 ,  C09K19/582 ,  G02F1/13439 ,  G02F2202/022 ,  G02F2202/16 ,  H01L51/0025 ,  H01L51/5206 ,  H01L51/5221

摘要： To provide display devices with improved image quality and reliability or display devices with a large screen at low cost with high productivity, an electrode layer containing a conductive polymer is used as an electrode layer for a display element, and the concentration of ionic impurities contained in the electrode layer containing a conductive polymer is reduced (preferably to 100 ppm or less). Ionic impurities are ionized, and easily become mobile ions, and they deteriorate a liquid crystal layer or an electroluminescent layer, which is used for a display element. Therefore, an electrode layer containing a conductive polymer, in which such ionic impurities are reduced is provided; thus, reliability of the display device can be improved.

摘要翻译： 为了以高生产率以低成本提供具有改进的图像质量和可靠性的显示装置或具有大屏幕的显示装置，使用含有导电聚合物的电极层作为显示元件的电极层，并且包含在 含有导电性聚合物的电极层减少（优选为100ppm以下）。 离子杂质离子化，容易成为移动离子，并且使用于显示元件的液晶层或电致发光层劣化。 因此，提供含有这样的离子性杂质减少的导电性高分子的电极层。 从而能够提高显示装置的可靠性。

公开(公告)号：US20120113378A1

公开(公告)日：2012-05-10

申请号：US13347760

申请日：2012-01-11

申请人： Erika TAKAHASHI ,  Gen FUJII ,  Shuji FUKAI ,  Takeshi NISHI

发明人： Erika TAKAHASHI ,  Gen FUJII ,  Shuji FUKAI ,  Takeshi NISHI

IPC分类号： G02F1/1339 ,  B32B37/14 ,  B32B37/02

CPC分类号： G02F1/13394 ,  G02F1/13392 ,  G02F2202/28

摘要： To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

摘要翻译： 为了在液晶显示装置中更准确地控制间隔物的定位，以防止由于在显示区域中的不正确定位而引起的显示缺陷。 提供具有更高图像质量和可靠性的液晶显示装置，并且提供一种以高产量制造液晶显示装置的方法。 在液晶显示装置中，为了降低相对于其中分散有球形间隔物的液体的润湿性，对排出球形间隔物的区域进行拒水处理。 液体（液滴）不会在液体排斥区域上扩散，并且在将球形间隔物朝向液体的中心移动的同时被干燥。 因此，可以通过在干燥液体的同时移动球形间隔物来校正由于液体中的失控而引起的放电后不正确的定位。

公开(公告)号：US20090008667A1

公开(公告)日：2009-01-08

申请号：US12135252

申请日：2008-06-09

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L21/283 ,  H01L33/00

CPC分类号： H01L51/0005 ,  H01L21/76825 ,  H01L21/76826 ,  H01L27/3246 ,  H01L27/3283 ,  H01L51/0545 ,  H01L51/56 ,  Y02P80/30

摘要： Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

摘要翻译： 对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理，形成硅烷偶联剂膜，将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量（小于等于390nm）的光照射衬底的表面，使得只有硅烷偶联 光催化性导电膜的表面上的试剂膜分解，光催化性导电膜的表面可以改性为亲液性的。

公开(公告)号：US20090002615A1

公开(公告)日：2009-01-01

申请号：US12137703

申请日：2008-06-12

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： G02F1/1337

CPC分类号： G02F1/133345

摘要： To manufacture display devices with improved image quality and reliability or display devices with a large screen at low cost with high productivity. An electrode layer containing a conductive polymer is used as an electrode layer of a display element in a display device and an inorganic insulating film serving as a passivation film is provided between the electrode layer and a display layer. Ionic impurities in the electrode layer are easily ionized and become mobile ions and thereby deteriorating a liquid crystal material or the like which is included in a display layer in a display element. Ionic impurities in the electrode layer are prevented from moving into a display layer by the inorganic insulating film. Thus, the reliability of the display device can be improved.

摘要翻译： 制造具有改进的图像质量和可靠性的显示装置，或者以低成本，高生产率显示具有大屏幕的装置。 包含导电聚合物的电极层用作显示装置中的显示元件的电极层，并且在电极层和显示层之间设置用作钝化膜的无机绝缘膜。 电极层中的离子杂质容易电离并成为移动离子，从而使包含在显示元件中的显示层中的液晶材料等劣化。 通过无机绝缘膜防止电极层中的离子杂质移动到显示层。 因此，可以提高显示装置的可靠性。

公开(公告)号：US20110303911A1

公开(公告)日：2011-12-15

申请号：US13213255

申请日：2011-08-19

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/0005 ,  H01L21/76825 ,  H01L21/76826 ,  H01L27/3246 ,  H01L27/3283 ,  H01L51/0545 ,  H01L51/56 ,  Y02P80/30

摘要： Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

摘要翻译： 对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理，形成硅烷偶联剂膜，将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量（小于等于390nm）的光照射衬底的表面，使得只有硅烷偶联 光催化性导电膜的表面上的试剂膜分解，光催化性导电膜的表面可以改性为亲液性的。

公开(公告)号：US20110031494A1

公开(公告)日：2011-02-10

申请号：US12911041

申请日：2010-10-25

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US20080099759A1

公开(公告)日：2008-05-01

申请号：US11923349

申请日：2007-10-24

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L51/40 ,  H01L51/50

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US20100296036A1

公开(公告)日：2010-11-25

申请号：US12805512

申请日：2010-08-03

申请人： Gen FUJII

发明人： Gen FUJII

IPC分类号： G02F1/1335

CPC分类号： G02B5/045 ,  G02F1/133555

摘要： A semi-transparent reflecting plate including plural reflecting surfaces extending substantially over an entire surface of a reflecting plate, not only permitting light to pass therethrough, but also reflecting the light on the reflecting surfaces.

摘要翻译： 一种半透明反射板，包括基本上在反射板的整个表面上延伸的多个反射表面，不仅允许光通过，而且还将光反射在反射面上。

公开(公告)号：US20130001560A1

公开(公告)日：2013-01-03

申请号：US13612146

申请日：2012-09-12

申请人： Shinji MAEKAWA ,  Gen FUJII ,  Hiroko SHIROGUCHI ,  Masafumi MORISUE

发明人： Shinji MAEKAWA ,  Gen FUJII ,  Hiroko SHIROGUCHI ,  Masafumi MORISUE

IPC分类号： H01L29/786

CPC分类号： G02B5/201 ,  G03F7/0007 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3281 ,  H01L27/3295 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.