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1.发明授权Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays 失效用于保护栅极结构的双电介质场效应晶体管，用于改善薄膜晶体管矩阵寻址液晶显示器的产量和性能
公开(公告)号：US5210045A
公开(公告)日：1993-05-11
申请号：US862474
申请日：1992-05-18
IPC分类号： H01L27/12
CPC分类号： H01L27/12 , Y10S148/043 , Y10S438/98
摘要： A dual dielectric structure is employed in the fabrication of thin film field effect transistors in a matrix addressed liquid display to provide improved transistor device characteristics and also to provide both electrical and chemical isolation for material employed in the gate metallization layer. In particular, the use of a layer of silicon oxide over the gate metallization layer is not only consistent with providing the desired electrical and chemical isolation, but also with providing redundant gate metallization material to be employed beneath source or data lines for electrical circuit redundancy. Gate line redundancy is also possible. The electrical and chemical isolation provided by the dual dielectric layer reduces the possibilities of short circuits occurring in the display. The absence of short circuits together with the improved redundancy characteristics significantly increase manufacturing yield. As display sizes increase, the yield problem becomes more and more significant, generally growing as the square of the diagonal measurement of the screen. The structure in the present invention also significantly reduces gate leakage current. In the process and structure of the present invention, gate electrode material is separated from semiconductor material by the aforementioned dual dielectric, typically comprising layers of silicon oxide disposed beneath a layer of silicon nitride which is, in turn, disposed beneath the active amorphous silicon semiconductor material.
摘要翻译： 双电介质结构用于在矩阵寻址液体显示器中制造薄膜场效应晶体管以提供改进的晶体管器件特性，并且还为栅极金属化层中所采用的材料提供电和化学隔离。 特别地，在栅极金属化层上使用一层氧化硅不仅与提供期望的电和化学隔离一致，而且还提供要用于电路冗余的源极或数据线下方的冗余栅极金属化材料。 栅线冗余也是可能的。 由双电介质层提供的电气和化学隔离减少了在显示器中发生短路的可能性。 没有短路以及改进的冗余特性显着提高了制造产量。 随着显示尺寸的增加，产量问题变得越来越重要，通常随屏幕对角线测量的平方而增长。 本发明的结构也显着地降低了栅极漏电流。 在本发明的方法和结构中，栅极电极材料通过上述双电介质与半导体材料分离，所述双电介质通常包括设置在有源非晶硅半导体下方的氮化硅层下方的氧化硅层 材料。
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2.发明授权Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays 失效用于保护栅极结构的双电介质场效应晶体管，用于改善薄膜晶体管矩阵寻址液晶显示器的产量和性能
公开(公告)号：US5148248A
公开(公告)日：1992-09-15
申请号：US303091
申请日：1989-01-26
IPC分类号： H01L27/12
CPC分类号： H01L27/12
摘要： A dual dielectric structure is employed in the fabrication of thin film field effect transistors in a matrix addressed liquid display to provide improved transistor device characteristics and also to provide both electricial and chemical isolation for material employed in the gate metallization layer. In particular, the use of a layer of silicon oxide over the gate metallization layer is not only consistent with providing the desired electrical and chemical isolation, but also with providing redundant gate metallization material to be employed beneath source or data lines for electrical circuit redundancy. Gate line redundancy is also possible. The electrical and chemical isolation provided by the dual dielectric layer reduces the possibilities of short circuits occurring in the display. The absence of short circuits together with the improved redundancy characteristics significantly increase manufacturing yield. As display sizes increase, the yield problem becomes more and more significant, generally growing as the square of the diagonal measurement of the screen. The structure in the present invention also significantly reduces gate leakage current. In the process and structure of the present invention, gate electrode material is separated from semiconductor material by the aforementioned dual dielectric, typically comprising layers of silicon oxide disposed beneath a layer of silicon nitride which is, in turn, disposed beneath the active amorphous silicon semiconductor material.
摘要翻译： 在矩阵寻址的液体显示器中制造薄膜场效应晶体管时采用双电介质结构以提供改进的晶体管器件特性，并且还为栅极金属化层中使用的材料提供电化学和化学隔离。 特别地，在栅极金属化层上使用一层氧化硅不仅与提供期望的电和化学隔离一致，而且还提供要用于电路冗余的源极或数据线下方的冗余栅极金属化材料。 栅线冗余也是可能的。 由双电介质层提供的电气和化学隔离减少了在显示器中发生短路的可能性。 没有短路以及改进的冗余特性显着提高了制造产量。 随着显示尺寸的增加，产量问题变得越来越重要，通常随屏幕对角线测量的平方而增长。 本发明的结构也显着地降低了栅极漏电流。 在本发明的方法和结构中，栅极电极材料通过上述双电介质与半导体材料分离，所述双电介质通常包括设置在有源非晶硅半导体下方的氮化硅层下方的氧化硅层 材料。
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3.发明授权Solid state fluoroscopic radiation imager with thin film transistor addressable array 失效具有薄膜晶体管可寻址阵列的固态荧光成像仪
公开(公告)号：US5587591A
公开(公告)日：1996-12-24
申请号：US174921
申请日：1993-12-29
申请人： Jack D. Kingsley , George E. Possin
发明人： Jack D. Kingsley , George E. Possin
IPC分类号： G01T1/20 , G01T1/24 , G01T1/29 , H01L29/786 , H01L29/04
CPC分类号： G01T1/2928 , G01T1/2018
摘要： A low noise fluoroscopic radiation imager includes a large area photosensor array having a plurality of photosensors arranged in a pattern so as to have a predetermined pitch, and a low noise addressable thin film transistor (TFT) array electrically coupled to the photosensors. The TFT array includes a plurality of low charge retention TFTs, each of which have a switched silicon region that has an area in microns not greater than the value of the pitch of the imager array expressed in microns. The portion of the switched silicon region underlying the source and drain electrodes of the TFT is not greater than about 150% of the portion of the switched silicon region in the channel area of the TFT. The ratio of the TFT channel width to channel length (the distance between the source and drain electrodes across the channel) is less than 20:1, and commonly less than 10:1, with the channel length in the range of between about 1 .mu.m and 4 .mu.m. The photosensor array also includes crossover regions between address lines that have substantially no silicon therebetween so that no switched silicon region exists at the crossovers.
摘要翻译： 低噪声荧光透射成像仪包括具有以预定间距排列成图案的多个光电传感器的大面积光电传感器阵列，以及与光电传感器电耦合的低噪声可寻址薄膜晶体管（TFT）阵列。 TFT阵列包括多个低电荷保持TFT，每个TFT具有开关硅区域，其面积微米不大于以微米表示的成像器阵列的间距值。 在TFT的源电极和漏电极下面的开关硅区域的部分不大于TFT沟道区域中开关硅区域的部分的约150％。 TFT沟道宽度与沟道长度的比率（源极和漏极之间的沟道间距离）小于20：1，通常小于10：1，沟道长度在约1微米之间 m和4亩。 光传感器阵列还包括地址线之间的交叉区域，它们之间基本上不具有硅，使得在交叉点处不存在交换的硅区域。
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公开(公告)号：US5610403A
公开(公告)日：1997-03-11
申请号：US523323
申请日：1995-09-05
申请人： Jack D. Kingsley , George E. Possin
发明人： Jack D. Kingsley , George E. Possin
IPC分类号： G01T1/20 , H01L27/146 , H01L31/09 , H01L31/0224 , G01T1/24
CPC分类号： H01L27/14643 , H01L27/14623
摘要： A solid state radiation imager that exhibits reduced capacitive coupling between pixel photodiodes and readout data lines, and thus further has reduced phantom images or image artifacts, includes a plurality of shield lines disposed at the same level of the device as the scan lines and associated gate electrodes for the switching transistors. The shield lines include respective pixel shielding spurs oriented along the same axis as the data lines and disposed between portions of the pixel photodiode and adjacent portions of the data lines. The shield lines are typically coupled to a shield voltage source such that the shield lines are maintained at a common potential.
摘要翻译： 一种固态辐射成像仪，其在像素光电二极管和读出数据线之间呈现出减小的电容耦合，并因此进一步具有减少的幻影图像或图像伪影，包括设置在与扫描线和相关门的器件相同级别的多条屏蔽线 用于开关晶体管的电极。 屏蔽线包括沿着与数据线相同的轴定向的各个像素屏蔽杂散，并且设置在像素光电二极管的部分和数据线的相邻部分之间。 屏蔽线通常耦合到屏蔽电压源，使得屏蔽线保持在共同的电位。
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5.发明授权
公开(公告)号：US5463225A
公开(公告)日：1995-10-31
申请号：US99370
申请日：1993-07-29
IPC分类号： G01J1/02 , G01T1/20 , H01L27/146 , H01L31/0216 , H01L31/0232 , H01L31/105 , H01L31/055
CPC分类号： H01L31/0216 , H01L31/02322 , H01L31/1055
摘要： A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.
摘要翻译： 辐射成像仪包括设置在非晶硅光电传感器阵列和闪烁体之间的光电传感器阻挡层。 阻挡层包括两层，第一层是设置在光传感器阵列的上导电层上的氧化硅，第二层是设置在第一层上的氮化硅。 光电传感器阻挡层具有基本上符合下面的上导电层的形状并具有约3微米的最大厚度的形状。 使用四乙氧基硅烷（TEOS）作为硅源气体，在小于约250℃的气相沉积工艺中沉积氧化硅和氮化硅。
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6.发明授权High sensitivity, high resolution, solid state x-ray imaging device with barrier layer 失效高灵敏度，高分辨率，具有障碍层的固态X射线成像装置
公开(公告)号：US5187369A
公开(公告)日：1993-02-16
申请号：US762708
申请日：1991-09-19
IPC分类号： H01L27/14 , G01T1/20 , H01L27/146 , H01L31/09
CPC分类号： H01L27/14663
摘要： A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elements is disposed in fixed relation to the photodetector array so that the individual scintillator elements are disposed on scintillator support islands. A barrier layer is disposed between the support islands and the photodetector array to minimize chemical interactions between the material forming the support island and the underlying photodetector array during the fabrication process. After the support islands have been patterned, the scintillator elements are grown by selectively depositing scintillator material on the support islands.
摘要翻译： 辐射成像仪包括具有地形图案化的表面特征的光电检测器阵列，其包括设置在光电检测器阵列中的一个或多个光电探测器的有效部分之上的支撑岛。 具有单个柱状闪烁体元件的结构闪烁体阵列以固定的关系设置在光电检测器阵列上，使得各个闪烁体元件设置在闪烁体支撑岛上。 阻挡层设置在支撑岛和光电检测器阵列之间，以最小化在制造过程中形成支撑岛的材料与下面的光电检测器阵列之间的化学相互作用。 在支撑岛被图案化之后，通过在支撑岛上选择性地沉积闪烁体材料来生长闪烁体元件。
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公开(公告)号：US4563584A
公开(公告)日：1986-01-07
申请号：US454469
申请日：1982-12-29
CPC分类号： G01T1/2002 , G01T1/2018 , G01T1/202
摘要： A solid state detector in which each scintillator is optimally configured and coupled with its associated sensing diode in a way which exploits light piping effects to enhance efficiency. Preferably, the detector is modular in nature. Each scintillator is a crystal having an index of refraction which differs as a function of direction through the crystal lattice, with the lowest index of refraction being parallel to the cleavage plane. The sides of each scintillator bar conform with the cleavage plane and are highly polished to light pipe photons created in the scintillator to the rear face for collection by an associated photodiode. The rear face is roughened to de-trap light, allowing transfer from the scintillator to the diode. Optical coupling means join the scintillators to their associated diodes to further enhance light transfer.
摘要翻译： 一种固态检测器，其中每个闪烁体被最佳地配置并且以其利用光管效应来提高效率的方式与其相关联的感测二极管耦合。 优选地，检测器本质上是模块化的。 每个闪烁体是具有通过晶格的方向的函数而不同的折射率的晶体，其中折射率平行于解理面。 每个闪烁体条的侧面与解理平面一致，并且被高度抛光到在闪烁体中产生的光管光子到后面，以便由相关的光电二极管收集。 后面被粗糙化以去除光，从闪烁体转移到二极管。 光耦合装置将闪烁体连接到其相关联的二极管以进一步增强光传输。
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公开(公告)号：US5233181A
公开(公告)日：1993-08-03
申请号：US891117
申请日：1992-06-01
IPC分类号： H01L31/0216 , H01L31/0232 , H01L31/105
CPC分类号： H01L31/1055 , H01L31/0216 , H01L31/02322
摘要： A photosensitive element has a two tier passivation layer disposed between the top contact layer and the amorphous silicon photosensor island. The passivation layer includes an inorganic moisture barrier layer which is disposed at least over the sidewalls of the photosensor island. The inorganic material forming this layer is preferably silicon nitride or silicon oxide. An organic dielectric layer is disposed over the moisture barrier layer and the photosensor island except for a selected contact area on the top surface of the photosensor island where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The organic dielectric material is preferably a polyimide.
摘要翻译： 光敏元件具有设置在顶部接触层和非晶硅光电传感器岛之间的双层钝化层。 钝化层包括至少设置在光电传感器岛侧壁上的无机水分阻挡层。 形成该层的无机材料优选为氮化硅或氧化硅。 有机电介质层设置在湿气阻挡层和光电传感器岛之上，除了光电传感器岛的顶表面上的选定的接触区域，其中顶部接触层与光电传感器岛的非晶硅材料电接触。 有机介电材料优选为聚酰亚胺。
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9.发明授权
公开(公告)号：US5179284A
公开(公告)日：1993-01-12
申请号：US747827
申请日：1991-08-21
IPC分类号： G01T1/164 , B29C51/16 , G01T1/20 , G01T7/00 , H01L31/0203 , H01L31/0216
CPC分类号： H01L31/0203 , B29C51/16 , G01T1/2002 , G01T1/2018 , H01L31/02161
摘要： A radiation imager having a scintillator mated to a photodetector array has a moisture barrier disposed over at least the portion of the scintillator exposed to the incident radiation. The moisture barrier, which is substantially impervious to moisture, is both radiation transmissive and optically reflective. A pellicle layer may be disposed between the top surface of the scintillator array and the moisture barrier to provide a stable surface to which the moisture barrier can adhere. The moisture barrier normally comprises an optically reflective layer and a moisture sealant layer. The optically reflective layer is comprised of a reflective metal or dielectric layers have different refractive indices and the moisture sealant layer is comprised of a silicone potting compound. A hardened protective window may be situated over the top surface of the moisture barrier.
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公开(公告)号：US4180737A
公开(公告)日：1979-12-25
申请号：US875146
申请日：1978-02-06
申请人： Jack D. Kingsley
发明人： Jack D. Kingsley
CPC分类号： G01T1/1644
摘要： A solid state x-ray detector has a scintillator element converting x-ray flux to fluorescence photons, a photosensor detecting the x-ray induced fluorescence of the scintillator, and collimator plates of a high atomic number material and having thickened end regions disposed toward the x-ray source to prevent the x-ray flux from impinging upon the edge region of a misaligned scintillator element.
摘要翻译： 固体X射线检测器具有将X射线通量转换为荧光光子的闪烁体元件，检测闪烁体的X射线诱导荧光的光电传感器和高原子序数材料的准直板，并且具有朝向 x射线源以防止x射线通量撞击到不对准的闪烁体元件的边缘区域。
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