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公开(公告)号：US4234358A
公开(公告)日：1980-11-18
申请号：US27274
申请日：1979-04-05
IPC分类号： H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/268 , H01L21/0242 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02667 , H01L21/02686 , H01L21/02689 , H01L21/02694 , Y10S117/904 , Y10S117/905 , Y10S148/09 , Y10S148/093
摘要： A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
摘要翻译： 描述了从结晶层去除缺陷和紊乱以及这些层的外延再生长的技术。 该技术涉及在材料的有限空间区域上沉积短期的能量脉冲，从而退火另外损坏的材料并使其外延再生。 在短期能量沉积之后，在邻接和重叠的区域上顺序地进行类似的处理，使得模式最终被“写入”。 该图案形成基本单晶材料的连续区域。
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2.发明授权Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy 失效利用分子束外延制造图案化外延硅膜的方法
公开(公告)号：US5134090A
公开(公告)日：1992-07-28
申请号：US366222
申请日：1989-06-12
申请人： John C. Bean , George A. Rozgonyi
发明人： John C. Bean , George A. Rozgonyi
IPC分类号： H01L21/20 , H01L21/762 , H01L21/8238
CPC分类号： H01L21/8238 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/76294 , Y10S148/026 , Y10S148/05 , Y10S148/051 , Y10S148/131
摘要： A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.
摘要翻译： 描述了制造图案化外延硅膜的方法和由此制造的器件。 该方法在基底上形成耐火材料的第一层，图案描绘出第一层。 然后在400摄氏度和700摄氏度之间的温度下沉积硅，除去形成的多晶材料。
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