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公开(公告)号：US06388287B2
公开(公告)日：2002-05-14
申请号：US09804325
申请日：2001-03-12
申请人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
发明人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
IPC分类号： H01L2976
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/1095 , H01L29/7802 , H01L29/7816 , H03K17/08142
摘要： The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.
摘要翻译： 本发明涉及一种具有降低的开关损耗的开关晶体管。 在开关晶体管中，当漏极/源极电压低时，输出电容非常高。 随着漏极/源极电压的增加，电容降低到存储在晶体管中的能量变得非常低的低值。
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公开(公告)号：USRE40352E1
公开(公告)日：2008-06-03
申请号：US10846998
申请日：2004-05-14
申请人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
发明人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/1095 , H01L29/7802 , H01L29/7816 , H03K17/08142
摘要： The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.
摘要翻译： 本发明涉及一种具有降低的开关损耗的开关晶体管。 在开关晶体管中，当漏极/源极电压低时，输出电容非常高。 随着漏极/源极电压的增加，电容降低到存储在晶体管中的能量变得非常低的低值。
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公开(公告)号：US20090219694A1
公开(公告)日：2009-09-03
申请号：US12279023
申请日：2007-02-09
申请人： Martin März , Ernst Schimanek , Dieter Brunner , Andreas Schletz
发明人： Martin März , Ernst Schimanek , Dieter Brunner , Andreas Schletz
IPC分类号： H05K7/20
CPC分类号： H01L23/473 , H01L24/48 , H01L25/072 , H01L2224/05624 , H01L2224/05647 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/15787 , H01L2924/19041 , H01L2924/351 , H01L2924/00 , H01L2224/45099
摘要： The invention concerns a power electronic arrangement comprising an insulating substrate, a cooling element arranged beneath the insulating substrate and one or more power electronic components disposed on a respective metallization surface of the insulating substrate. Disposed on the surface of the insulating substrate is a metal layer portion which projects beyond the insulating substrate at all sides. The region of the metal layer portion, that projects beyond the insulating substrate, forms a metal flange which borders the insulating substrate. The cooling element, on its side towards the insulating substrate, beneath the insulating substrate, has one or more recesses, whereby a cavity delimited by the insulating substrate and wall surfaces of the one or more recesses is formed beneath the insulating substrate for receiving a liquid cooling agent. The metal flange is further connected to the cooling element.
摘要翻译： 本发明涉及一种功率电子装置，其包括绝缘基板，布置在绝缘基板下方的冷却元件和设置在绝缘基板的相应金属化表面上的一个或多个电力电子部件。 设置在绝缘基板的表面上的是在绝缘基板的各侧突出的金属层部。 突出超过绝缘基板的金属层部分的区域形成与绝缘基板相接的金属凸缘。 冷却元件在其绝缘基板的一侧朝向绝缘基板的下方具有一个或多个凹部，由此绝缘基板限定的空腔和一个或多个凹部的壁表面形成在绝缘基板下面，用于接收液体 冷却剂。 金属法兰进一步连接到冷却元件。
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公开(公告)号：US06404041B1
公开(公告)日：2002-06-11
申请号：US09420461
申请日：1999-10-18
IPC分类号： H01L23495
CPC分类号： H01L23/49562 , H01L23/481 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： The power switch has considerably reduced common-mode interference and relatively reduced circuit complexity. The power switch is formed of a semiconductor chip on a leadframe. A first terminal of the semiconductor chip is connected to the active potential and a second terminal for inactive potential is connected to the leadframe. The second terminal is either the drain of a transistor or the anode of a diode.
摘要翻译： 电源开关具有显着降低的共模干扰和相对降低的电路复杂度。 电源开关由引线框架上的半导体芯片形成。 半导体芯片的第一端子连接到有源电位，并且用于无效电位的第二端子连接到引线框架。 第二端子是晶体管的漏极或二极管的阳极。
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