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1.
公开(公告)号:US20140098608A1
公开(公告)日:2014-04-10
申请号:US13384999
申请日:2011-06-10
CPC分类号: G11C5/025 , G11C7/1042 , G11C8/12 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C16/08 , G11C16/10 , G11C16/26
摘要: Subject matter disclosed herein relates to methods and apparatus, such as memory devices and systems including such memory devices. In one apparatus example, a plurality of block configurations may be employed. Block configurations may include an arrangement of similarly doped semiconductor switches. Block configurations may select a respective tile of a memory array, a particular memory cell of the respective tile, and select a memory operation to apply to the particular memory cell. Immediately adjacent block configurations within a particular slice of the memory array may be substantially mirrored and immediately adjacent block configurations in separate immediately adjacent slices of the memory array may be substantially similar. Similarly doped diffusion regions for similarly doped semiconductor switches in substantially mirrored block configurations may be arranged to electrically share a common potential signal value level. Other apparatus and methods are also disclosed.
摘要翻译: 本文公开的主题涉及方法和装置,诸如包括这种存储装置的存储装置和系统。 在一个装置示例中,可以采用多个块配置。 块配置可以包括类似掺杂的半导体开关的布置。 块配置可以选择存储器阵列的相应瓦片,相应瓦片的特定存储器单元,并且选择应用于特定存储器单元的存储器操作。 存储器阵列的特定切片内的紧邻相邻的块配置可以基本上镜像,并且在存储器阵列的分离的紧邻相邻切片中的紧密相邻的块配置可以基本相似。 用于基本上镜像的块配置的类似掺杂的半导体开关的类似的掺杂扩散区可以被布置成电共享公共的电位信号值电平。 还公开了其它装置和方法。
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2.
公开(公告)号:US08995161B2
公开(公告)日:2015-03-31
申请号:US13384999
申请日:2011-06-10
CPC分类号: G11C5/025 , G11C7/1042 , G11C8/12 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C16/08 , G11C16/10 , G11C16/26
摘要: Subject matter disclosed herein relates to methods and apparatus, such as memory devices and systems including such memory devices. In one apparatus example, a plurality of block configurations may be employed. Block configurations may include an arrangement of similarly doped semiconductor switches. Block configurations may select a respective tile of a memory array, a particular memory cell of the respective tile, and select a memory operation to apply to the particular memory cell. Immediately adjacent block configurations within a particular slice of the memory array may be substantially mirrored and immediately adjacent block configurations in separate immediately adjacent slices of the memory array may be substantially similar. Similarly doped diffusion regions for similarly doped semiconductor switches in substantially mirrored block configurations may be arranged to electrically share a common potential signal value level. Other apparatus and methods are also disclosed.
摘要翻译: 本文公开的主题涉及方法和装置,诸如包括这种存储装置的存储装置和系统。 在一个装置示例中,可以采用多个块配置。 块配置可以包括类似掺杂的半导体开关的布置。 块配置可以选择存储器阵列的相应瓦片,相应瓦片的特定存储器单元,并且选择应用于特定存储器单元的存储器操作。 存储器阵列的特定切片内的紧邻相邻的块配置可以基本上镜像,并且在存储器阵列的分离的紧邻相邻切片中的紧密相邻的块配置可以基本相似。 用于基本上镜像的块配置的类似掺杂的半导体开关的类似的掺杂扩散区可以被布置成电共享公共的电位信号值电平。 还公开了其它装置和方法。
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