公开(公告)号：US20130029445A1

公开(公告)日：2013-01-31

申请号：US13558051

申请日：2012-07-25

申请人： Gi Bum KIM ,  Won Goo HUR ,  Seung Woo CHOI ,  Seung Jae LEE ,  Si Hyuk LEE ,  Tae Hun KIM

发明人： Gi Bum KIM ,  Won Goo HUR ,  Seung Woo CHOI ,  Seung Jae LEE ,  Si Hyuk LEE ,  Tae Hun KIM

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：制备包括彼此相对的第一和第二主表面的衬底; 在基板的第一主表面上形成多个突出部分; 在形成有所述多个突出部的所述第一主表面上形成发光层; 通过去除形成在与所述多个突出部分周围的槽部分相对应的区域中的所述发光堆叠的部分来形成多个发光结构; 以及沿着所述凹槽部分分离所述基底。

公开(公告)号：US20120107987A1

公开(公告)日：2012-05-03

申请号：US13286834

申请日：2011-11-01

申请人： Won Goo HUR ,  Young Chul SHIN ,  Gi Bum KIM ,  Seung Woo CHOI

发明人： Won Goo HUR ,  Young Chul SHIN ,  Gi Bum KIM ,  Seung Woo CHOI

IPC分类号： H01L33/02

CPC分类号： H01L33/42 ,  H01L33/025 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射法在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。 在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明 电极具有显着改善的电特性。

公开(公告)号：US20160149086A1

公开(公告)日：2016-05-26

申请号：US14799675

申请日：2015-07-15

申请人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

发明人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

IPC分类号： H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L33/52 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。

公开(公告)号：US20120272900A1

公开(公告)日：2012-11-01

申请号：US13439178

申请日：2012-04-04

申请人： Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

发明人： Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

IPC分类号： C23C16/455

CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45587

摘要： A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

摘要翻译： 根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使 通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。 因此，侧流反应器中的基板中心的膜厚度增加。

公开(公告)号：US20130088325A1

公开(公告)日：2013-04-11

申请号：US13645347

申请日：2012-10-04

申请人： Seung Woo CHOI

发明人： Seung Woo CHOI

IPC分类号： G06F7/04

CPC分类号： G06F21/43 ,  G06F21/35 ,  G06F2221/2111 ,  H04L63/0853 ,  H04L63/18

摘要： A system for authenticating a user of an in-home display (IHD) and an authentication method are provided. A user of an IHD is authenticated by using a mobile terminal including an authentication application. The authentication system receive authentication request data from the mobile terminal and allows the IHD to display a message in relation to user confirmation, and when certain requirements are met, the authentication system performs user authentication to permit a user to use the IHD.

摘要翻译： 提供了一种用于认证家庭内显示（IHD）用户的认证方法和认证方法。 通过使用包括认证应用的移动终端来认证IHD的用户。 验证系统从移动终端接收认证请求数据，并允许IHD显示与用户确认相关的消息，当满足某些要求时，认证系统执行用户认证以允许用户使用IHD。