公开(公告)号：US20210305290A1

公开(公告)日：2021-09-30

申请号：US16829553

申请日：2020-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Michel Rakowski ,  Won Suk Lee ,  Asif Chowdhury ,  Ajey Poovannummoottil Jacob

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/101

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

公开(公告)号：US11721780B2

公开(公告)日：2023-08-08

申请号：US17528385

申请日：2021-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Asif Chowdhury ,  Yusheng Bian

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/028

CPC classification number: H01L31/1075 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

Abstract: Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

公开(公告)号：US20230155050A1

公开(公告)日：2023-05-18

申请号：US17528385

申请日：2021-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Asif Chowdhury ,  Yusheng Bian

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

Abstract: Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

公开(公告)号：US11329087B2

公开(公告)日：2022-05-10

申请号：US16829553

申请日：2020-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Michel Rakowski ,  Won Suk Lee ,  Asif Chowdhury ,  Ajey Poovannummoottil Jacob

IPC: H01L27/146 ,  H01L31/101 ,  H01L31/0232

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

公开(公告)号：US11705529B2

公开(公告)日：2023-07-18

申请号：US17551544

申请日：2021-12-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Asif Chowdhury

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/0203 ,  H01L31/101

CPC classification number: H01L31/02327 ,  H01L31/0203 ,  H01L31/101 ,  H01L31/18

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.

公开(公告)号：US20230187566A1

公开(公告)日：2023-06-15

申请号：US17551544

申请日：2021-12-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Asif Chowdhury

IPC: H01L31/0232 ,  H01L31/101 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L31/02327 ,  H01L31/101 ,  H01L31/0203 ,  H01L31/18

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.