-
公开(公告)号：US12001056B2
公开(公告)日：2024-06-04
申请号：US17834375
申请日：2022-06-07
CPC分类号： G02B6/2934 , G02B6/4215
摘要： Structures including stacked photonics chips and methods of fabricating a structure including stacked photonics chips. The structure comprises a first chip including a first waveguide core, a ring resonator adjacent to a portion of the first waveguide core, and a first dielectric layer over the first waveguide core and the ring resonator. The first dielectric layer has a first surface. The structure further comprises a second chip including a second waveguide core and a second dielectric layer over the second waveguide core. The second dielectric layer has a second surface adjacent to the first surface of the first dielectric layer, and the second waveguide core is positioned adjacent to the ring resonator.
-
公开(公告)号：US20230393339A1
公开(公告)日：2023-12-07
申请号：US17834375
申请日：2022-06-07
CPC分类号： G02B6/2934 , G02B6/4215
摘要： Structures including stacked photonics chips and methods of fabricating a structure including stacked photonics chips. The structure comprises a first chip including a first waveguide core, a ring resonator adjacent to a portion of the first waveguide core, and a first dielectric layer over the first waveguide core and the ring resonator. The first dielectric layer has a first surface. The structure further comprises a second chip including a second waveguide core and a second dielectric layer over the second waveguide core. The second dielectric layer has a second surface adjacent to the first surface of the first dielectric layer, and the second waveguide core is positioned adjacent to the ring resonator.
-
公开(公告)号：US20240219636A1
公开(公告)日：2024-07-04
申请号：US18093039
申请日：2023-01-04
发明人： Bartlomiej Jan Pawlak , Oscar D. Restrepo , Koushik Ramachandran , Yusheng Bian , Eduardo Cruz Silva
CPC分类号： G02B6/1228 , G02B6/13 , G02B2006/12121
摘要： Structures including an edge coupler and methods of forming such structures. The structure comprises a dielectric layer on a semiconductor substrate. The dielectric layer includes a cavity and an edge defining a boundary of the cavity. The structure further comprises an edge coupler including a waveguide core. The waveguide core includes a portion that extends past the edge of the dielectric layer and overhangs the cavity. The structure further comprises a heater positioned adjacent to the portion of the waveguide core. The heater is spaced by a gap from the portion of the waveguide core.
-
公开(公告)号：US20240159701A1
公开(公告)日：2024-05-16
申请号：US17987543
申请日：2022-11-15
发明人： Judson Holt , Bartlomiej Jan Pawlak , Vibhor Jain
IPC分类号： G01N27/414
CPC分类号： G01N27/4148
摘要： Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.
-
公开(公告)号：US20240085624A1
公开(公告)日：2024-03-14
申请号：US17944252
申请日：2022-09-14
CPC分类号： G02B6/1228 , G02B6/13
摘要： Structures including an electro-absorption modulator and methods of forming such structures. The structure comprises a waveguide core including a first tapered section, a second tapered section, and a longitudinal axis. The first tapered section and the second tapered section are aligned along the longitudinal axis. The structure further comprises a first waveguide taper overlapping the first tapered section of the waveguide core, a second waveguide taper overlapping the second tapered section of the waveguide core, and a multiple-layer structure on the waveguide core between the first waveguide taper and the second waveguide taper.
-
公开(公告)号：US20240009668A1
公开(公告)日：2024-01-11
申请号：US17858461
申请日：2022-07-06
CPC分类号： B01L3/50273 , B81B1/002 , B81C1/00071 , B81B2201/05 , B81B2203/0338 , B01L2300/0645 , B01L2300/12 , B01L2400/0424
摘要： Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a semiconductor substrate including a trench and a layer stack on the semiconductor substrate. The layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench. The structure further comprises a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench.
-
公开(公告)号：US11774689B2
公开(公告)日：2023-10-03
申请号：US17510329
申请日：2021-10-25
IPC分类号： G02B6/42
CPC分类号： G02B6/4243
摘要： The disclosed subject matter relates generally to photonic integrated circuit chips, semiconductor assemblies or packagings, and a method of forming the same. More particularly, the present disclosure relates to placement of optical fibers on a photonics chip, and a semiconductor assembly including the photonics chip.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.013 秒)
