专利检索 ap:("GlobalFoundries U.S. Inc.") AND inv:"Mei Yu Soh" 第 1 页

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发明公开
CHARGE PUMPS, LOGIC CIRCUITS INCLUDING CHARGE PUMPS, LOGIC DEVICES INCLUDING LOGIC CIRCUITS, AND METHODS OF OPERATING LOGIC CIRCUITS 审中-公开

公开(公告)号：US20240275385A1

公开(公告)日：2024-08-15

申请号：US18167279

申请日：2023-02-10

申请人： GlobalFoundries U.S. Inc.

发明人： Santosh SHARMA , Mei Yu Soh

IPC分类号： H03K19/0185 , H03K17/10 , H03K17/687 , H03K19/00 , H03K19/017

CPC分类号： H03K19/018535 , H03K17/102 , H03K17/6871 , H03K19/0013 , H03K19/01721

摘要： A GaN logic circuit may include an input node receiving an input voltage, a first pull up transistor pulling up an output voltage in response to the input voltage, and a first depletion mode transistor having a first gate to which a first gate voltage is applied and a second gate to which a second gate voltage is applied. The first depletion mode transistor may control the first pull up transistor in response to a gate voltage difference between the first gate voltage and the second gate voltage. The logic device may further include a capacitor having a first end coupled to the first depletion mode transistor and a second end coupled to the first pull up transistor.