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1.发明申请Methods for forming structures including strained-semiconductor-on-insulator devices 审中-公开用于形成包括应变绝缘体上半导体器件的结构的方法公开(公告)号：US20060197126A1
公开(公告)日：2006-09-07
申请号：US11416423
申请日：2006-05-02
申请人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
发明人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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2.发明申请Methods for forming double gate strained-semiconductor-on-insulator device structures 审中-公开用于形成双栅应变半导体绝缘体上器件结构的方法公开(公告)号：US20060197125A1
公开(公告)日：2006-09-07
申请号：US11415784
申请日：2006-05-02
申请人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20120299120A1
公开(公告)日：2012-11-29
申请号：US13568944
申请日：2012-08-07
IPC分类号： H01L27/088
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译： 用于处理射频（RF）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变通道层的场效应晶体管（FET）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 RF电路，例如压电振荡器（VCO），低噪声放大器（LNA）和使用这些FET构建的锁相环（PLL）也表现出增强的性能。
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公开(公告)号：US20110121362A1
公开(公告)日：2011-05-26
申请号：US13017694
申请日：2011-01-31
IPC分类号： H01L27/088
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。
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公开(公告)号：US20060197124A1
公开(公告)日：2006-09-07
申请号：US11415706
申请日：2006-05-01
申请人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
发明人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20050280103A1
公开(公告)日：2005-12-22
申请号：US11211933
申请日：2005-08-25
申请人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US06933518B2
公开(公告)日：2005-08-23
申请号：US10253361
申请日：2002-09-24
IPC分类号： H01L27/06 , H01L27/092 , H01L29/10 , H01L29/51 , H01L29/786 , H03B5/12 , H03K3/354 , H03L7/093 , H03L7/099 , H01L29/06
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
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公开(公告)号：US20100264995A1
公开(公告)日：2010-10-21
申请号：US12767671
申请日：2010-04-26
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。
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公开(公告)号：US07709828B2
公开(公告)日：2010-05-04
申请号：US11032413
申请日：2005-01-10
IPC分类号： H01L31/00
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。
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公开(公告)号：US07906776B2
公开(公告)日：2011-03-15
申请号：US12767671
申请日：2010-04-26
IPC分类号： H01L31/00
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。
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