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公开(公告)号：US07560165B2
公开(公告)日：2009-07-14
申请号：US11147909
申请日：2005-06-07
CPC分类号： B32B3/26 , B32B2310/12 , B32B2457/00 , H01L21/76814 , Y10T428/249953 , Y10T428/249978 , Y10T428/249993 , Y10T428/31663
摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may besealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
摘要翻译： 公开了用于最小化与邻近多孔电介质材料的微电子器件处理有关的缺点的方法和结构。 特别地，公开了化学方案，其中多孔介电材料可以通过将偶联剂附着到孔的表面而进行加压。 偶联剂可以在电介质表面中的反应性基团上形成全部或部分盖，或者可以交联以密封电介质中的孔。
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公开(公告)号：US07658975B2
公开(公告)日：2010-02-09
申请号：US10735122
申请日：2003-12-12
CPC分类号： B32B3/26 , B32B2310/12 , B32B2457/00 , H01L21/76814 , Y10T428/249953 , Y10T428/249978 , Y10T428/249993 , Y10T428/31663
摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
摘要翻译： 公开了用于最小化与邻近多孔电介质材料的微电子器件处理有关的缺点的方法和结构。 特别地，公开了化学方案，其中可以通过将偶联剂附着到孔的表面来密封多孔介电材料。 偶联剂可以在电介质表面中的反应性基团上形成全部或部分盖，或者可以交联以密封电介质中的孔。
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3.发明授权Method of forming a selectively converted inter-layer dielectric using a porogen material 失效使用致孔剂材料形成选择性转化的层间电介质的方法公开(公告)号：US07018918B2
公开(公告)日：2006-03-28
申请号：US10701251
申请日：2003-11-03
申请人： Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
发明人： Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
IPC分类号： H01L21/302 , H01L21/461 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/312 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02362 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L21/76835 , H01L2221/1036 , H01L2221/1047
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。
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