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    Semiconductor light source with electrically tunable emission wavelength
    3.
    发明授权
    Semiconductor light source with electrically tunable emission wavelength 有权
    具有电可调谐发射波长的半导体光源

    公开(公告)号：US07876795B2

    公开(公告)日：2011-01-25

    申请号：US11206505

    申请日：2005-08-18

    申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

    发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

    IPC分类号： H01S3/10 ,  H01S5/00

    CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/3422

    摘要： A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

    摘要翻译： 半导体光源包括衬底，下和上包层，具有嵌入有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

    Semiconductor light source with electrically tunable emission wavelength
    4.
    发明申请
    Semiconductor light source with electrically tunable emission wavelength 有权
    具有电可调谐发射波长的半导体光源

    公开(公告)号：US20060056466A1

    公开(公告)日：2006-03-16

    申请号：US11206505

    申请日：2005-08-18

    申请人： Gregory Belenky ,  John Bruno ,  Mikhail Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard Tober

    发明人： Gregory Belenky ,  John Bruno ,  Mikhail Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard Tober

    IPC分类号： H01S3/10

    CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/3422

    摘要： A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

    摘要翻译： 公开了一种半导体光源，其包括基底，下部和上部包层，具有嵌入的有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 辐射复合发生在电子和空穴之间，累积在每个有效区域周期的高亲和力层和低亲和层中形成的三角势阱的基态中。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

    Bi-directional dual-color light emitting device and systems for use thereof
    5.
    发明申请
    Bi-directional dual-color light emitting device and systems for use thereof 审中-公开
    双向双色发光装置及其使用的系统

    公开(公告)号：US20160005921A1

    公开(公告)日：2016-01-07

    申请号：US14789438

    申请日：2015-07-01

    申请人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

    发明人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

    IPC分类号： H01L33/08 ,  G01N21/3504 ,  H01L33/30 ,  H01L33/06 ,  H01L33/00

    CPC分类号： H01L33/08 ,  G01N21/314 ,  G01N21/3504 ,  G01N2021/3181 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/30

    摘要： An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.

    摘要翻译： 公开了一种针对低成本气体或其他非固体物质检测系统进行了优化的LED，其发射来自同一孔径的两个波长（“颜色”）的电磁辐射。 LED装置发射以目标检测非固体物质的吸收线为中心的波长的光，并且发射具有不被目标非固体物质吸收的波长的参考线，同时两个波长都透过 低损失的气氛。 由于吸收和参考波长从相同的精确孔径发射，所以两个波​​长都可以共享相同的光路，减小了检测器的尺寸和成本，同时还减少了由于光路变化导致的潜在的误差源。

    Bi-directional dual-color light emitting device and systems for use thereof
    6.
    发明授权
    Bi-directional dual-color light emitting device and systems for use thereof 有权
    双向双色发光装置及其使用的系统

    公开(公告)号：US09590140B2

    公开(公告)日：2017-03-07

    申请号：US14789438

    申请日：2015-07-01

    申请人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

    发明人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

    IPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  G01N21/3504 ,  G01N21/31

    CPC分类号： H01L33/08 ,  G01N21/314 ,  G01N21/3504 ,  G01N2021/3181 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/30

    摘要： An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.

    摘要翻译： 公开了一种针对低成本气体或其他非固体物质检测系统进行了优化的LED，其发射来自同一孔径的两个波长（“颜色”）的电磁辐射。 LED装置发射以目标检测非固体物质的吸收线为中心的波长的光，并且发射具有不被目标非固体物质吸收的波长的参考线，同时两个波长都透过 低损失的气氛。 由于吸收和参考波长从相同的精确孔径发射，所以两个波​​长都可以共享相同的光路，减小了检测器的尺寸和成本，同时还减少了由于光路变化导致的潜在的误差源。

    Compound Semiconductor Device on Virtual Substrate
    7.
    发明申请
    Compound Semiconductor Device on Virtual Substrate 有权
    复合半导体器件在虚拟基板上

    公开(公告)号：US20120223362A1

    公开(公告)日：2012-09-06

    申请号：US13038585

    申请日：2011-03-02

    申请人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

    发明人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

    IPC分类号： H01L31/0304

    CPC分类号： H01L31/06875 ,  H01L31/03046 ,  H01L31/101 ,  Y02E10/544

    摘要： A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

    摘要翻译： 提供了一种制造基于阻挡二极管的红外检测器的方法，其利用具有超过6埃的晶格常数的未应变的，不弛豫的III-V化合物半导体材料层的生长。 生长通过分子束外延（MBE）或金属 - 有机气相外延（MOVPE）的方式进行。 该方法包括使用块状结晶衬底以及渐变组成的GaInAsSb过渡层的生长，随后是任意的具有恒定组成的GaInAsSb厚层，与所述III-V化合物半导体材料层晶格匹配，所述可选择的 具有恒定组成的GaInAsSb层作为虚拟底物。 该方法提供适用于半导体器件制造的高结晶质量层，其可以有效地与波长在约2微米至约16微米之间的中红外光谱范围的电磁辐射相互作用。

    Compound semiconductor device on virtual substrate
    8.
    发明授权
    Compound semiconductor device on virtual substrate 有权
    复合半导体器件在虚拟衬底上

    公开(公告)号：US09065000B2

    公开(公告)日：2015-06-23

    申请号：US13038585

    申请日：2011-03-02

    申请人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

    发明人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

    IPC分类号： H01L31/0336 ,  H01L31/0687

    CPC分类号： H01L31/06875 ,  H01L31/03046 ,  H01L31/101 ,  Y02E10/544

    摘要： A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

    摘要翻译： 提供了一种制造基于阻挡二极管的红外检测器的方法，其利用具有超过6埃的晶格常数的未应变的，不弛豫的III-V化合物半导体材料层的生长。 生长通过分子束外延（MBE）或金属 - 有机气相外延（MOVPE）的方式进行。 该方法包括使用块状结晶衬底以及渐变组成的GaInAsSb过渡层的生长，随后是任意的具有恒定组成的GaInAsSb厚层，与所述III-V化合物半导体材料层晶格匹配，所述可选择的 具有恒定组成的GaInAsSb层作为虚拟底物。 该方法提供适用于半导体器件制造的高结晶质量层，其可以有效地与波长在约2微米至约16微米之间的中红外光谱范围的电磁辐射相互作用。