公开(公告)号：US08571082B2

公开(公告)日：2013-10-29

申请号：US13012627

申请日：2011-01-24

申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

IPC分类号： H01S5/00 ,  H01S3/10

CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/0614 ,  H01S5/12 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402

摘要： The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

摘要翻译： 本发明通过斯塔克效应提供具有电控折射率的QCL器件。 通过改变有源区域中的电场，可以改变激光能级之间的能量间隔，因此可以控制激光波长附近的光谱区域中的有效折射率。

公开(公告)号：US5064283A

公开(公告)日：1991-11-12

申请号：US407186

申请日：1989-09-14

申请人： Richard L. Tober

发明人： Richard L. Tober

IPC分类号： G01J1/44 ,  G01J3/02 ,  G01N21/17 ,  G01N21/31

CPC分类号： G01J3/02 ,  G01J3/0291 ,  G01N21/1717 ,  G01J2001/4242 ,  G01N2021/1721 ,  G01N2021/1725 ,  G01N2021/1729 ,  G01N2021/1731 ,  G01N2021/1738 ,  G01N2021/3133 ,  G01N21/6489 ,  G01N2201/06113 ,  G01N2201/0636

摘要： A spectroscopy characterization module having a particular configuration includes a light tight housing that accepts monochromatic radiation through a first optical port and optically chopped coherent radiation through a second optical port. A material sample is held on a sample mount within the housing according to the spectroscopy characterization technique to be used. A rotatable detector mount enclosed within the housing positions a detector in different positions depending on the measurement being performed. A first one-to-one image forming mirror focuses monochromatic radiation passing through the first optical port onto the material sample. A lens focuses optically chopped radiation passing through the second optical port onto the material sample. A second one-to-one image forming mirror focuses radiation transmitted through the sample onto the detector in a first position while a third one-to-one image forming mirror focuses radiation reflected off the sample onto the detector in a second position. Various spectroscopic measurements can be performed on the material sample by merely using different sample mounts without changing the configuration of the characterization module.

摘要翻译： 具有特定配置的光谱学表征模块包括光接收壳体，其通过第一光学端口接收单色辐射，并通过第二光学端口接受光学切碎的相干辐射。 根据要使用的光谱表征技术将材料样品保持在壳体内的样品架上。 封装在壳体内的可旋转检测器安装座根据正在执行的测量将检测器定位在不同的位置。 第一个一对一的成像镜将通过第一光学端口的单色辐射聚焦到材料样品上。 透镜将通过第二光学端口的光学切割的辐射聚焦到材料样品上。 第二个一对一的图像形成反射镜将透过样品的辐射聚焦到第一位置的检测器上，而第三个一对一的成像镜将来自样品的辐射的辐射聚焦在第二位置的检测器上。 可以通过仅使用不同的样品固定器而不改变表征模块的配置，对材料样品进行各种光谱测量。

公开(公告)号：US07271019B1

公开(公告)日：2007-09-18

申请号：US11452566

申请日：2006-06-09

申请人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

发明人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

IPC分类号： H01L21/00

CPC分类号： H01S5/02461 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3401 ,  H01L2924/00

摘要： Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

摘要翻译： 公开了一种半导体器件及其制造方法，该半导体器件及其制造方法包括：衬底，与衬底相邻的台面区域;电镀金属层，用于降低器件周围的台面区域的热阻;绝缘体层， 来自所述电镀金属层的台面区域，散热器，与所述散热器相邻的接合层，以及在所述基板和所述散热器之间的第二金属层，其中，所述基板与所述接合层相邻，并且其中所述电镀 金属层的尺寸和构造为具有至少台面区域厚度的一半的厚度; 并横向散开热量离开台面区域。 所述台面区域包括与所述基板相邻的第一包覆层，与所述第一覆盖层相邻的有源区域和与所述有源区域相邻的第二覆盖层。

公开(公告)号：US20120120972A1

公开(公告)日：2012-05-17

申请号：US13012627

申请日：2011-01-24

申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

IPC分类号： H01S5/06 ,  H01S3/10 ,  H01S5/343

CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/0614 ,  H01S5/12 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402

摘要： The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

摘要翻译： 本发明通过斯塔克效应提供具有电控折射率的QCL器件。 通过改变有源区域中的电场，可以改变激光能级之间的能量间隔，因此可以控制激光波长附近的光谱区域中的有效折射率。

公开(公告)号：US07876795B2

公开(公告)日：2011-01-25

申请号：US11206505

申请日：2005-08-18

申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

IPC分类号： H01S3/10 ,  H01S5/00

CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/3422

摘要： A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

摘要翻译： 半导体光源包括衬底，下和上包层，具有嵌入有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

公开(公告)号：USH1873H

公开(公告)日：2000-10-03

申请号：US565597

申请日：1995-12-01

申请人： Richard L. Tober ,  John D. Bruno

发明人： Richard L. Tober ,  John D. Bruno

IPC分类号： H01L31/0232 ,  H01L31/14

CPC分类号： H01L31/14

摘要： An optoelectronic device comprises a detector, an emitter and a modulator corporated into a single semiconductor chip. The optoelectronic device provides electrical isolation and optical interconnection (via waveguides) of the components of the semiconductor chip. Contacts for providing forward and reverse bias voltages are included in the device. The optoelectronic device is fabricated by growing a strained-layer quantum diode structure to produce a piezoelectric field in a quantum well, electrically isolating portions of the structure, and optically interconnecting portions of the structure. The fabrication is carried out by using an implant process or an etching process, and without having to use either regrowth techniques or packaging together of multiple optical elements.

摘要翻译： 光电子器件包括检测器，发射极和并入到单个半导体芯片中的调制器。 光电子器件提供半导体芯片的组件的电隔离和光学互连（通过波导）。 用于提供正向和反向偏置电压的触点包含在器件中。 通过生长应变层量子二极管结构以在量子阱中产生压电场，电隔离结构的部分以及光学地互连结构的部分来制造光电子器件。 该制造通过使用注入工艺或蚀刻工艺进行，并且不必再使用再生技术或将多个光学元件封装在一起。

公开(公告)号：US07061022B1

公开(公告)日：2006-06-13

申请号：US10927653

申请日：2004-08-24

申请人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

发明人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

IPC分类号： H01L27/15 ,  H01L23/34

CPC分类号： H01S5/02461 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3401 ,  H01L2924/00

摘要： Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

摘要翻译： 公开了一种半导体器件及其制造方法，该半导体器件及其制造方法包括：衬底，与衬底相邻的台面区域;电镀金属层，用于降低器件周围的台面区域的热阻;绝缘体层， 来自所述电镀金属层的台面区域，散热器，与所述散热器相邻的接合层，以及在所述基板和所述散热器之间的第二金属层，其中，所述基板与所述接合层相邻，并且其中所述电镀 金属层的尺寸和构造为具有至少台面区域厚度的一半的厚度; 并横向散开热量离开台面区域。 所述台面区域包括与所述基板相邻的第一包覆层，与所述第一覆盖层相邻的有源区域和与所述有源区域相邻的第二覆盖层。