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    Semiconductor light source with electrically tunable emission wavelength
    3.
    发明授权
    Semiconductor light source with electrically tunable emission wavelength 有权
    具有电可调谐发射波长的半导体光源

    公开(公告)号：US07876795B2

    公开(公告)日：2011-01-25

    申请号：US11206505

    申请日：2005-08-18

    申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

    发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober

    IPC分类号： H01S3/10 ,  H01S5/00

    CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/3422

    摘要： A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

    摘要翻译： 半导体光源包括衬底，下和上包层，具有嵌入有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

    Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
    4.
    发明授权
    Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers 失效
    外侧上脊波导半导体激光器的横向散热层

    公开(公告)号：US07271019B1

    公开(公告)日：2007-09-18

    申请号：US11452566

    申请日：2006-06-09

    申请人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

    发明人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

    IPC分类号： H01L21/00

    CPC分类号： H01S5/02461 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3401 ,  H01L2924/00

    摘要： Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

    摘要翻译： 公开了一种半导体器件及其制造方法，该半导体器件及其制造方法包括：衬底，与衬底相邻的台面区域;电镀金属层，用于降低器件周围的台面区域的热阻;绝缘体层， 来自所述电镀金属层的台面区域，散热器，与所述散热器相邻的接合层，以及在所述基板和所述散热器之间的第二金属层，其中，所述基板与所述接合层相邻，并且其中所述电镀 金属层的尺寸和构造为具有至少台面区域厚度的一半的厚度; 并横向散开热量离开台面区域。 所述台面区域包括与所述基板相邻的第一包覆层，与所述第一覆盖层相邻的有源区域和与所述有源区域相邻的第二覆盖层。

    Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
    5.
    发明授权
    Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers 失效
    外侧上脊波导半导体激光器的横向散热层

    公开(公告)号：US07061022B1

    公开(公告)日：2006-06-13

    申请号：US10927653

    申请日：2004-08-24

    申请人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

    发明人： John T. Pham ,  John D. Bruno ,  Richard L. Tober

    IPC分类号： H01L27/15 ,  H01L23/34

    CPC分类号： H01S5/02461 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3401 ,  H01L2924/00

    摘要： Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

    摘要翻译： 公开了一种半导体器件及其制造方法，该半导体器件及其制造方法包括：衬底，与衬底相邻的台面区域;电镀金属层，用于降低器件周围的台面区域的热阻;绝缘体层， 来自所述电镀金属层的台面区域，散热器，与所述散热器相邻的接合层，以及在所述基板和所述散热器之间的第二金属层，其中，所述基板与所述接合层相邻，并且其中所述电镀 金属层的尺寸和构造为具有至少台面区域厚度的一半的厚度; 并横向散开热量离开台面区域。 所述台面区域包括与所述基板相邻的第一包覆层，与所述第一覆盖层相邻的有源区域和与所述有源区域相邻的第二覆盖层。

    Single-chip, multi-functional optoelectronic device and method for fabricating same
    6.
    依法登记的发明
    Single-chip, multi-functional optoelectronic device and method for fabricating same 失效
    单芯片多功能光电器件及其制造方法

    公开(公告)号：USH1873H

    公开(公告)日：2000-10-03

    申请号：US565597

    申请日：1995-12-01

    申请人： Richard L. Tober ,  John D. Bruno

    发明人： Richard L. Tober ,  John D. Bruno

    IPC分类号： H01L31/0232 ,  H01L31/14

    CPC分类号： H01L31/14

    摘要： An optoelectronic device comprises a detector, an emitter and a modulator corporated into a single semiconductor chip. The optoelectronic device provides electrical isolation and optical interconnection (via waveguides) of the components of the semiconductor chip. Contacts for providing forward and reverse bias voltages are included in the device. The optoelectronic device is fabricated by growing a strained-layer quantum diode structure to produce a piezoelectric field in a quantum well, electrically isolating portions of the structure, and optically interconnecting portions of the structure. The fabrication is carried out by using an implant process or an etching process, and without having to use either regrowth techniques or packaging together of multiple optical elements.

    摘要翻译： 光电子器件包括检测器，发射极和并入到单个半导体芯片中的调制器。 光电子器件提供半导体芯片的组件的电隔离和光学互连（通过波导）。 用于提供正向和反向偏置电压的触点包含在器件中。 通过生长应变层量子二极管结构以在量子阱中产生压电场，电隔离结构的部分以及光学地互连结构的部分来制造光电子器件。 该制造通过使用注入工艺或蚀刻工艺进行，并且不必再使用再生技术或将多个光学元件封装在一起。

    Valve-less fluid control circuit for rhythmic action devices
    7.
    发明授权
    Valve-less fluid control circuit for rhythmic action devices 失效
    节流动作装置的无流体控制电路

    公开(公告)号：US06319214B1

    公开(公告)日：2001-11-20

    申请号：US09654838

    申请日：2000-09-01

    申请人： Donald E. Wortman ,  John D. Bruno

    发明人： Donald E. Wortman ,  John D. Bruno

    IPC分类号： F15C112

    CPC分类号： A61M1/107 ,  A61M1/1008 ,  A61M1/1037 ,  A61M1/122 ,  F15C1/22 ,  Y10T137/2093 ,  Y10T137/212

    摘要： A valve-less fluid control circuit for controlling rhythmic action devices, such as circulatory assist devices. The fluid control circuit has a plurality of pressure sensitive fluid oscillators for circulating a fluid. Each fluid oscillator includes a capacitance chamber unit for peristaltic pumping of fluid after being filled via an input conduit and a resistance conduit. A first control conduit provides an outlet of fluid from the capacitance unit during peristaltic pumping, and when the pressure of the fluid in the first control conduit reaches a certain level relative to the pressure of fluid in the input conduit, the fluid is directed through an interactive region and exits the first fluid oscillator through an exhaust conduit. A coupling unit couples the output of the first fluid oscillator to the input conduit of the successive fluid oscillator, so that the expansion and contraction of the capacitance chambers occurs successively without the need for valves and/or complicated control circuitry, such as solenoids and cams. A return conduit at the last fluid oscillator returns the fluid to a second control conduit of the first fluid oscillator to refill the first capacitance chamber.

    摘要翻译： 一种用于控制节律作用装置（例如循环辅助装置）的无阀流体控制电路。 流体控制电路具有用于使流体循环的多个压敏流体振荡器。 每个流体振荡器包括用于经由输入导管和电阻导管填充后的流体的蠕动泵送的电容室单元。 第一控制管道在蠕动泵送期间提供来自电容单元的流体出口，并且当第一控制管道中的流体的压力相对于输入管道中的流体的压力达到一定水平时，流体被引导通过 并通过排气导管离开第一流体振荡器。 耦合单元将第一流体振荡器的输出耦合到连续流体振荡器的输入导管，使得电容室的膨胀和收缩依次发生，而不需要阀和/或复杂的控制电路，例如螺线管和凸轮 。 在最后一个流体振荡器处的返回导管将流体返回到第一流体振荡器的第二控制导管以重新填充第一电容室。

    Acoustic navigation aid for autonomous coal miner
    8.
    发明授权
    Acoustic navigation aid for autonomous coal miner 失效
    自主采煤机的导航辅助

    公开(公告)号：US6094986A

    公开(公告)日：2000-08-01

    申请号：US209839

    申请日：1998-12-11

    申请人： Donald E. Wortman ,  John D. Bruno

    发明人： Donald E. Wortman ,  John D. Bruno

    IPC分类号： G01B17/02 ,  G01S7/521 ,  G01N29/18

    CPC分类号： G01B17/02 ,  G01S7/521

    摘要： An apparatus for determining thickness of a wall or coal seam includes a ice for measuring the time of sound travel through the thickness; a flexible isolation bellows that mechanically supports the device for measuring the time of sound travel; and a retractable isolation arm attached to the isolation bellows. The device for measuring the time of sound travel may be a single-beam pulse sonar system. The single-beam pulse sonar system includes a pulse generator, a power amplifier, a transmit/receive switch, a reciprocal acoustic transducer, a receiver for determining the thickness, and a display and/or an electronic feedback circuit for steering an autonomous miner.

    摘要翻译： 用于确定墙壁或煤层厚度的装置包括用于测量声音穿过厚度的时间的装置; 灵活的隔离波纹管，用于机械地支撑用于测量声音行进时间的设备; 以及附接到隔离波纹管的可伸缩隔离臂。 用于测量声音行进时间的装置可以是单束脉冲声纳系统。 单束脉冲声纳系统包括脉冲发生器，功率放大器，发射/接收开关，倒数声换能器，用于确定厚度的接收器，以及用于控制自动矿工的显示器和/或电子反馈电路。

    Multiple quantum well semiconductor optical modulator
    9.
    发明授权
    Multiple quantum well semiconductor optical modulator 失效
    多量子阱半导体光调制器

    公开(公告)号：US06710367B1

    公开(公告)日：2004-03-23

    申请号：US10146944

    申请日：2002-05-17

    申请人： John D. Bruno ,  Mary S. Tobin

    发明人： John D. Bruno ,  Mary S. Tobin

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F2001/0157

    摘要： A quantum-confined Stark effect semiconductor optical modulator, operable to modulate light of a particular wavelength in the range of around 780 to 840 nm. A p-i-n diode having p, intrinsic and n regions, as well as first and second electrical contacts for application of a reverse bias voltage defines the modulator. The particular intrinsic region includes a plurality of semiconductor layers defining a plurality of quantum wells separated by barrier layers having a certain bandgap energy above that of the quantum wells. The quantum wells including at least two ultra-thin barrier layers within the quantum well and being of a material having a certain bandgap energy above that of the quantum wells. The width of each ultra-thin barrier layer is no more than approximately two molecular layers thick.

    摘要翻译： 量子限制的斯塔克效应半导体光调制器，其可操作以调制在780至840nm范围内的特定波长的光。 具有p，本征和n区的p-i-n二极管以及用于施加反向偏置电压的第一和第二电触点限定了调制器。 特定的本征区域包括多个限定多个量子阱的半导体层，该多个量子阱由势垒层分隔，其具有高于量子阱的能带隙能量。 量子阱包括量子阱内的至少两个超薄势垒层，并且具有高于量子阱的能带能量的一定带隙能量的材料。 每个超薄阻挡层的宽度不超过约两个分子层厚度。

    Vibration distortion removal for scanning probe microscopes
    10.
    发明授权
    Vibration distortion removal for scanning probe microscopes 失效
    扫描探针显微镜的振动失真去除

    公开(公告)号：US06178813B2

    公开(公告)日：2001-01-30

    申请号：US09441894

    申请日：1999-11-17

    申请人： John D. Bruno ,  Donald E. Wortman ,  John L. Bradshaw ,  Romel D. Gomez

    发明人： John D. Bruno ,  Donald E. Wortman ,  John L. Bradshaw ,  Romel D. Gomez

    IPC分类号： G01B528

    CPC分类号： G01Q30/06 ,  G01Q70/04 ,  Y10S977/868

    摘要： A method for improving images of surface features of a sample, constructed by a scanning probe microscope, includes constructing images of surface features of a sample with a scanning probe microscope; measuring a displacement of the sample that occurs during the constructing step; and correcting the images using the measured displacement. An apparatus for improving images of surface features of a sample, constructed by a scanning probe microscope, includes a vacuum chamber; a sample holder disposed in the vacuum chamber; at least one spring connected between the vacuum chamber and the sample holder; at least one magnet disposed in the vacuum chamber for damping vibrations of the sample holder; a probe and piezo tube assembly disposed in the vacuum chamber for scanning surface features of a sample; and an interferometer disposed in the vacuum chamber wherein the interferometer measures a distance between the sample and a point fixed with respect to the sample.

    摘要翻译： 由扫描探针显微镜构成的用于改善样品表面特征图像的方法包括用扫描探针显微镜构建样品的表面特征图像; 测量在构建步骤期间发生的样品的位移; 并使用测量的位移校正图像。 一种用于改善由扫描探针显微镜构成的样品的表面特征的图像的装置，包括真空室; 设置在真空室中的样品架; 连接在真空室和样品架之间的至少一个弹簧; 设置在真空室中的至少一个磁体用于阻止样品保持器的振动; 设置在真空室中用于扫描样品的表面特征的探针和压电管组件; 以及设置在所述真空室中的干涉仪，其中所述干涉仪测量所述样品与相对于所述样品固定的点之间的距离。