公开(公告)号：US20130176073A1

公开(公告)日：2013-07-11

申请号：US13348011

申请日：2012-01-11

申请人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

发明人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

IPC分类号： H01H37/76 ,  H01L21/768 ,  B44C1/22 ,  H01L23/525

CPC分类号： H01L23/5256 ,  H01H2085/0275 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

摘要翻译： 公开了一种BEOL电子熔断器，其可靠地吹入通孔并且甚至可以在最窄的节距BEOL层中形成。 BEOL电子熔断器可以利用线路第一双镶嵌工艺形成，以创建一个亚光刻通孔，作为电子熔丝的可编程链路。 亚光刻通孔可以使用标准光刻图案化，并且通孔的横截面可以被调谐以匹配目标编程电流。

公开(公告)号：US09685404B2

公开(公告)日：2017-06-20

申请号：US13348011

申请日：2012-01-11

申请人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

发明人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

IPC分类号： H01L21/768 ,  H01L23/525 ,  H01L23/522 ,  H01H85/02

CPC分类号： H01L23/5256 ,  H01H2085/0275 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

公开(公告)号：US20140021578A1

公开(公告)日：2014-01-23

申请号：US13552106

申请日：2012-07-18

申请人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

发明人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/5256 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

公开(公告)号：US08841208B2

公开(公告)日：2014-09-23

申请号：US13552106

申请日：2012-07-18

申请人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

发明人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

IPC分类号： H01L21/44 ,  H01L21/82 ,  H01L23/52

CPC分类号： H01L23/5256 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

摘要翻译： 一种电子熔丝结构，包括包括导电盖的第一Mx金属，位于Mx金属上方的Mx + 1金属，其中Mx + 1金属不包括导电盖，以及通孔，其中通孔电连接Mx金属 以垂直方向连接到Mx + 1金属。

公开(公告)号：US08629049B2

公开(公告)日：2014-01-14

申请号：US13420724

申请日：2012-03-15

申请人： Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

发明人： Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC分类号： H01L21/44

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fabrication method for fabricating an electrically programmable fuse method includes depositing a polysilicon layer on a substrate, patterning an anode contact region, a cathode contact region and a fuse link conductively connecting the cathode contact region with the anode contact region, which is programmable by applying a programming current, depositing a silicide layer on the polysilicon layer, and forming a plurality of anisometric contacts on the silicide layer of the cathode contact region and the anode contact region in a predetermined configuration, respectively.

摘要翻译： 制造电可编程熔丝法的制造方法包括在衬底上沉积多晶硅层，图案化阳极接触区域，阴极接触区域和将阴极接触区域与阳极接触区域导电连接的熔断体，其可通过应用 编程电流，在多晶硅层上沉积硅化物层，以及在预定构型中分别在阴极接触区域和阳极接触区域的硅化物层上形成多个不规则接触。

公开(公告)号：US20130063202A1

公开(公告)日：2013-03-14

申请号：US13612938

申请日：2012-09-13

申请人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

发明人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC分类号： H01L23/544 ,  H01H37/76

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse has first and second semiconductor regions having one conductivity type and a third semiconductor region therebetween having an opposite conductivity type. A conductive region contacting the first region has a long dimension in a second direction transverse to the direction of a long dimension of a gate. An antifuse anode is spaced apart from the first region in the second direction and a contact is connected with the second region. Applying a programming voltage between the anode and the contact with gate bias sufficient to fully turn on field effect transistor operation of the antifuse heats the first region to drive a dopant outwardly, causing an edge of the first region to move closer to an edge of the second region and reduce electrical resistance between the first and second regions by an one or more orders of magnitude.

摘要翻译： 反熔丝具有一个导电类型的第一和第二半导体区域和它们之间具有相反导电类型的第三半导体区域。 接触第一区域的导电区域在横向于栅极的长尺寸方向的第二方向上具有长尺寸。 反熔丝阳极在第二方向上与第一区域间隔开，并且触点与第二区域连接。 在阳极和接触之间施加编程电压，栅极偏压足以完全导通反熔丝的场效应晶体管操作加热第一区域以向外驱动掺杂剂，导致第一区域的边缘更接近于 并且将第一和第二区域之间的电阻降低一个或多个数量级。

公开(公告)号：US20120161855A1

公开(公告)日：2012-06-28

申请号：US13413192

申请日：2012-03-06

申请人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

发明人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

IPC分类号： H01H37/76

CPC分类号： G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus for programming an electronically programmable semiconductor fuse applies a programming current to a fuse link as a series of multiple pulses. Application of the programming current as a series of multiple short pulses provides a level of programming current sufficiently high to ensure reliable and effective electromigration while avoiding exceeding temperature limits of the fuse link.

摘要翻译： 用于编程电子可编程半导体熔丝的装置将编程电流作为一系列多个脉冲施加到熔丝链路。 将编程电流应用为一系列多个短脉冲提供足够高的编程电流电平，以确保可靠且有效的电迁移，同时避免超过熔丝链的温度限制。

公开(公告)号：US20090128225A1

公开(公告)日：2009-05-21

申请号：US11941308

申请日：2007-11-16

申请人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

发明人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

IPC分类号： H01H37/76

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A design structure for an apparatus for programming an electronically programmable semiconductor fuse. The apparatus applies a programming current to a fuse link as a series of multiple pulses. Application of the programming current as a series of multiple short pulses provides a level of programming current sufficiently high to ensure reliable and effective electromigration while avoiding exceeding temperature limits of the fuse link.

摘要翻译： 一种用于编程电子可编程半导体保险丝的装置的设计结构。 该装置将编程电流作为一系列多个脉冲施加到熔丝链路。 将编程电流应用为一系列多个短脉冲提供足够高的编程电流电平，以确保可靠且有效的电迁移，同时避免超过熔丝链的温度限制。

公开(公告)号：US08159040B2

公开(公告)日：2012-04-17

申请号：US12119526

申请日：2008-05-13

申请人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Herbert Lei Ho ,  Deok-kee Kim ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Robert Mark Rassel ,  John Matthew Safran ,  Kenneth Jay Stein ,  Norman Whitelaw Robson ,  Ping-Chuan Wang ,  Hongwen Yan

发明人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Herbert Lei Ho ,  Deok-kee Kim ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Robert Mark Rassel ,  John Matthew Safran ,  Kenneth Jay Stein ,  Norman Whitelaw Robson ,  Ping-Chuan Wang ,  Hongwen Yan

IPC分类号： H01L29/00

CPC分类号： H01L27/0629 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.

摘要翻译： 半导体结构和半导体结构的制造方法提供一种场效应器件，其位于和形成在半导体衬底的有源区上，并且至少一个熔丝结构，抗熔丝结构和电阻结构中的至少一个至少位于并形成 部分地同时地在与半导体衬底内的有源区域横向分离的隔离区域上。 场效应器件包括包括高介电常数介电材料的栅极电介质和包括金属材料的栅电极。 熔丝结构，反熔丝结构和电阻器结构中的至少一个包括包括与栅极电介质相同的材料的焊盘电介质，以及可选地还包括熔断器，反熔丝或电阻器，其可以包括与所述栅极电介质相同的金属材料 栅电极。

公开(公告)号：US20080089159A1

公开(公告)日：2008-04-17

申请号：US11548482

申请日：2006-10-11

申请人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

发明人： Dan Moy ,  Stephen Wu ,  Peter Wang ,  Brian W. Messenger ,  Edwin Soler ,  Gabriel Chiulli

IPC分类号： G11C17/18 ,  H01L29/00

CPC分类号： G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for programming an electronically programmable semiconductor fuse applies a programming current to a fuse link as a series of multiple pulses. Application of the programming current as a series of multiple short pulses provides a level of programming current sufficiently high to ensure reliable and effective electromigration while avoiding exceeding temperature limits of the fuse link.

摘要翻译： 用于编程电子可编程半导体熔丝的装置和方法将编程电流作为一系列多个脉冲施加到熔丝链路。 将编程电流应用为一系列多个短脉冲提供足够高的编程电流电平，以确保可靠且有效的电迁移，同时避免超过熔丝链的温度限制。