Cache memory array for multiple address spaces
    5.
    发明授权
    Cache memory array for multiple address spaces 有权
    缓存多个地址空间的存储器阵列

    公开(公告)号:US06571316B1

    公开(公告)日:2003-05-27

    申请号:US09595077

    申请日:2000-06-16

    IPC分类号: G06F1206

    摘要: Apparatus including a cache having a plurality of storage positions for data and for addresses, each of the storage positions including in the storage positions signifying one of a plurality of address spaces; and selection circuitry selecting data from a storage position based on an address including an address space indicator.

    摘要翻译: 一种装置,包括具有多个用于数据和地址的存储位置的高速缓存,每个存储位置包括表示多个地址空间中的一个的存储位置; 以及选择电路基于包括地址空间指示符的地址从存储位置选择数据。

    Dynamic clocked inverter latch with reduced charge leakage
    7.
    发明授权
    Dynamic clocked inverter latch with reduced charge leakage 失效
    动态时钟反相器锁存器,减少电荷泄漏

    公开(公告)号:US5606270A

    公开(公告)日:1997-02-25

    申请号:US357607

    申请日:1994-12-16

    CPC分类号: H03K19/0963 H03K19/0016

    摘要: A dynamic clocked inverter latch with reduced charge leakage includes a first node biasing circuit with a P-MOSFET and an N-MOSFET totem-pole-coupled between VDD and an output node, and a second node biasing circuit with another N-MOSFET and another P-MOSFET totem-pole-coupled between the output node and VSS. The first P-MOSFET receives an input data signal and the first N-MOSFET receives a clock signal and in accordance therewith together cause the output node to charge to a charged state having a charge voltage associated therewith. The second N-MOSFET also receives the input data signal while the second P-MOSFET receives the inverse of the clock signal and in accordance therewith together cause the output node to discharge to a discharged state having a discharge voltage associated therewith. During inactive states of the clock signal, the first N-MOSFET becomes reverse-biased by the output node discharge voltage, while during inactive states of the inverse clock signal, the second P-MOSFET becomes reverse-biased by the output node charge voltage, thereby virtually eliminating charge leakage to and from the output node, respectively.

    摘要翻译: 具有减小的电荷泄漏的动态时钟反相器锁存器包括具有P-MOSFET的第一节点偏置电路和VDD与输出节点之间的N-MOSFET图腾柱耦合,以及具有另一N-MOSFET和另一N-MOSFET的第二节点偏置电路 输出节点和VSS之间的P-MOSFET图腾柱耦合。 第一P-MOSFET接收输入数据信号,并且第一N-MOSFET接收时钟信号,并且根据它们一起导致输出节点充电到具有与其相关联的充电电压的充电状态。 第二N-MOSFET还接收输入数据信号,而第二P-MOSFET接收到时钟信号的反相,并且根据它们一起使得输出节点放电到具有与其相关联的放电电压的放电状态。 在时钟信号的非活动状态期间,第一N-MOSFET由输出节点放电电压反向偏置,而在反时钟信号的非活动状态期间,第二P-MOSFET由输出节点充电电压反向偏置, 从而实际上分别消除了来自输出节点的电荷泄漏。