PIXEL ARRAY WITH SHARED READOUT CIRCUITRY
    1.
    发明申请
    PIXEL ARRAY WITH SHARED READOUT CIRCUITRY 有权
    具有共享读取电路的PIXEL阵列

    公开(公告)号:US20100148037A1

    公开(公告)日:2010-06-17

    申请号:US12544755

    申请日:2009-08-20

    IPC分类号: H03K17/78 H03F3/08

    摘要: A pixel array comprises a plurality of photo-sensitive elements arranged in rows and columns and readout circuitry for reading a value of a photo-sensitive element. Shared readout circuitry is provided for a pair of adjacent photo-sensitive elements. Adjacent instances of the shared readout circuitry are staggered with respect to one another. For a layout having shared readout circuitry for a pair of photo-sensitive elements, adjacent instances of the shared readout circuitry are offset by a horizontal distance of one column and a vertical distance of one row of the array. The shared readout circuitry can serve a pair of adjacent photo-sensitive elements in a row or column of the array, or a pair of photo-sensitive elements which are diagonally adjacent in the array. An improved yield and symmetry results from staggering instances of the shared readout circuitry.

    摘要翻译: 像素阵列包括以行和列排列的多个光敏元件以及用于读取感光元件的值的读出电路。 为一对相邻的感光元件提供共享读出电路。 共享读出电路的相邻实例相对于彼此交错。 对于具有用于一对光敏元件的共享读出电路的布局,共享读出电路的相邻实例被一列的水平距离和阵列的一行的垂直距离偏移。 共享读出电路可以在阵列的行或列中的一对相邻的光敏元件或在阵列中对角相邻的一对光敏元件。 由共享读出电路的交错实例产生的改善的产量和对称性。

    PIXEL ARRAY WITH GLOBAL SHUTTER
    2.
    发明申请
    PIXEL ARRAY WITH GLOBAL SHUTTER 有权
    像素阵列与全球快门

    公开(公告)号:US20090256060A1

    公开(公告)日:2009-10-15

    申请号:US12408975

    申请日:2009-03-23

    IPC分类号: H01L27/146 H03F3/08

    摘要: A pixel comprises a photo-sensitive element for generating charges in response to incident radiation and a sense node. A transfer gate is positioned between the photo-sensitive element and the sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node. A sample stage is connected to the output of the first buffer amplifier and is operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is being exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.

    摘要翻译: 像素包括用于响应于入射辐射产生电荷的感光元件和感测节点。 传输门位于感光元件和感测节点之间,用于控制电荷传递到感测节点。 复位开关连接到感测节点,用于将感测节点复位到预定电压。 第一缓冲放大器具有连接到感测节点的输入。 样本级连接到第一缓冲放大器的输出,并且可操作以对感测节点的值进行采样。 第二缓冲放大器具有连接到样品台的输入。 控制电路操作复位开关,并使样品台在感光元件暴露于辐射的同时采样感测节点。 像素阵列同时暴露于辐射。 可以读取第一曝光期间的采样值,同时在第二曝光期间曝光光敏元件。

    PIXEL ARRAY WITH INDIVIDUAL EXPOSURE CONTROL FOR A PIXEL OR PIXEL REGION
    3.
    发明申请
    PIXEL ARRAY WITH INDIVIDUAL EXPOSURE CONTROL FOR A PIXEL OR PIXEL REGION 有权
    具有像素或像素区域的个人曝光控制的像素阵列

    公开(公告)号:US20130001404A1

    公开(公告)日:2013-01-03

    申请号:US13537832

    申请日:2012-06-29

    申请人: Guy MEYNANTS

    发明人: Guy MEYNANTS

    IPC分类号: H01L27/148

    摘要: A pixel array includes a plurality of pixel structures, with each pixel structure having a photo-sensitive element for generating charge in response to incident light; a charge conversion element; a first transfer gate and a second transfer gate connected in series between the photosensitive element and the charge conversion element or between the photosensitive element and a supply line; and an output stage. A first transfer gate control line is connected to the first transfer gates of a first sub-set of the pixel structures in the array; and a second transfer gate control line connected to the second transfer gates of a second sub-set of the pixel structures in the array. The first sub-set of pixel structures and second sub-set of pixel structures partially overlap, having at least one pixel structure in common between them.

    摘要翻译: 像素阵列包括多个像素结构,每个像素结构具有用于响应于入射光而产生电荷的光敏元件; 电荷转换元件; 串联连接在感光元件和电荷转换元件之间或感光元件与电源线之间的第一传输栅极和第二传输栅极; 和输出级。 第一传输门控制线连接到阵列中的像素结构的第一子集的第一传输门; 以及连接到阵列中的像素结构的第二子集的第二传输门的第二传输门控制线。 像素结构的第一子集和像素结构的第二子集部分地重叠,具有在它们之间共同的至少一个像素结构。

    METHOD OF MANUFACTURE OF A BACKSIDE ILLUMINATED IMAGE SENSOR
    4.
    发明申请
    METHOD OF MANUFACTURE OF A BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    背面照明图像传感器的制造方法

    公开(公告)号:US20110101482A1

    公开(公告)日:2011-05-05

    申请号:US12939599

    申请日:2010-11-04

    申请人: Guy MEYNANTS

    发明人: Guy MEYNANTS

    摘要: A method of manufacturing a backside illuminated image sensor includes providing a start material that has a layer of semiconductor material on a substrate. The layer of semiconductor material has a first face and a second, backside, face. The layer of semiconductor material is processed to form semiconductor devices in the layer adjacent the first face. At least a part of the substrate is removed to leave an exposed face. A passivation layer is formed on the exposed face, the passivation layer having negative fixed charges. The passivation layer can be Al2O3 (Sapphire). The passivation layer can have a thickness less than 5 μm, advantageously less than 1 μm, and more advantageously in the range 1 nm-150 nm. Another layer, or layers, can be provided on the passivation layer, including: an anti-reflective layer, a layer to improve passivation, a layer including a color filter pattern, a layer comprising a microlens.

    摘要翻译: 制造背面照明图像传感器的方法包括在基板上提供具有半导体材料层的起始材料。 半导体材料层具有第一面和第二面,背面。 处理半导体材料层以在与第一面相邻的层中形成半导体器件。 去除衬底的至少一部分以留下暴露的面。 在暴露的表面上形成钝化层,钝化层具有负的固定电荷。 钝化层可以是Al 2 O 3(蓝宝石)。 钝化层可以具有小于5μm的厚度,有利地小于1μm,更有利地在1nm-150nm的范围内。 可以在钝化层上提供另一层或多层,包括:抗反射层,改善钝化层,包括滤色器图案的层,包含微透镜的层。