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公开(公告)号：US09783882B2
公开(公告)日：2017-10-10
申请号：US14482251
申请日：2014-09-10
申请人： H.C. Starck, Inc.
发明人： Steven A. Miller , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.
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2.发明申请FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THEREFROM 有权精细粒度，非带状，具有均匀的随机晶体取向的耐火金属溅射靶，制造这种膜的方法以及薄膜的器件及其制造的产品公开(公告)号：US20150034477A1
公开(公告)日：2015-02-05
申请号：US14482251
申请日：2014-09-10
申请人： H.C. Starck, Inc.
发明人： Steven A. Miller , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.
摘要翻译： 在各种实施例中，最初通过铸锭冶金或粉末冶金形成并通过例如冷喷涂再生的溅射靶用于溅射工艺以产生金属薄膜。
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公开(公告)号：US08883250B2
公开(公告)日：2014-11-11
申请号：US13920534
申请日：2013-06-18
申请人： H.C. Starck Inc.
发明人： Steven A. Miller , Prabhat Kumar , Rong-chein Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
摘要翻译： 在各种实施例中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，溅射靶材料（i）包括金属，（ii）在其中限定凹槽，以及（iii） 具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。
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公开(公告)号：US20130337159A1
公开(公告)日：2013-12-19
申请号：US13920534
申请日：2013-06-18
申请人： H.C. Starck Inc.
发明人： Steven A. Miller , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
摘要翻译： 在各种实施例中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，溅射靶材料（i）包括金属，（ii）在其中限定凹槽，以及（iii） 具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。
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