公开(公告)号：US09976212B2

公开(公告)日：2018-05-22

申请号：US14908396

申请日：2014-07-31

Applicant: H.C. STARCK INC.

Inventor： Steven A. Miller

IPC: C23C14/34 ,  C23C24/04 ,  H01J37/34

CPC classification number: C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

公开(公告)号：US09412568B2

公开(公告)日：2016-08-09

申请号：US13628093

申请日：2012-09-27

Applicant: H.C. Starck, Inc.

Inventor： Francois-Charles Dary ,  Mark Gaydos ,  William Loewenthal ,  Steven A. Miller ,  Gary Rozak ,  Scott Jeffrey Volchko ,  Stefan Zimmermann ,  Michael Thomas Stawovy

IPC: C23C14/34 ,  H01J37/34 ,  B05D1/02 ,  B23K31/02 ,  C23C24/04

CPC classification number: H01J37/3429 ,  B05D1/02 ,  B23K31/02 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332 ,  Y10T156/10

Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.

Abstract translation: 在各种实施例中，至少部分地通过溅射材料的喷涂和/或焊接形成连接的溅射靶。

公开(公告)号：US08703233B2

公开(公告)日：2014-04-22

申请号：US13628089

申请日：2012-09-27

Applicant: H.C. Starck, Inc.

Inventor： Steven A. Miller ,  Francois-Charles Dary ,  Mark Gaydos ,  Gary Rozak

IPC: B05D1/02 ,  B05D1/38

CPC classification number: H01J37/3429 ,  B05D1/02 ,  B23K31/02 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332 ,  Y10T156/10

Abstract: In various embodiments, a joined sputtering target is formed by filling at least a portion of a gap between two discrete sputtering-target tiles with a gap-fill material, spray-depositing a spray material to form a partial joint, removing at least a portion of the gap-fill material, and, thereafter, spray-depositing the spray material to join the tiles.

Abstract translation: 在各种实施例中，通过将两个离散的溅射靶瓷砖之间的间隙的至少一部分填充有间隙填充材料，喷射沉积喷涂材料以形成部分接合而形成连接的溅射靶，去除至少一部分 的间隙填充材料，然后喷雾沉积喷涂材料以连接瓷砖。

公开(公告)号：US09783882B2

公开(公告)日：2017-10-10

申请号：US14482251

申请日：2014-09-10

Applicant: H.C. Starck, Inc.

Inventor： Steven A. Miller ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann ,  Olaf Schmidt-Park

IPC: C23C14/34 ,  H01J37/34 ,  B22F1/00 ,  C22C1/04 ,  C23C24/04 ,  C23C14/00 ,  C23C14/14 ,  C23C4/134

CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.

公开(公告)号：US20150034477A1

公开(公告)日：2015-02-05

申请号：US14482251

申请日：2014-09-10

Applicant: H.C. Starck, Inc.

Inventor： Steven A. Miller ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann ,  Olaf Schmidt-Park

IPC: C23C14/34 ,  C23C14/14 ,  H01J37/34 ,  C23C14/00

CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.

Abstract translation: 在各种实施例中，最初通过铸锭冶金或粉末冶金形成并通过例如冷喷涂再生的溅射靶用于溅射工艺以产生金属薄膜。

公开(公告)号：US08883250B2

公开(公告)日：2014-11-11

申请号：US13920534

申请日：2013-06-18

Applicant: H.C. Starck Inc.

Inventor： Steven A. Miller ,  Prabhat Kumar ,  Rong-chein Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann ,  Olaf Schmidt-Park

IPC: B05D1/02 ,  C23C4/12 ,  C23C14/34 ,  C22C1/04 ,  B22F1/00

CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

Abstract translation: 在各种实施例中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，溅射靶材料（i）包括金属，（ii）在其中限定凹槽，以及（iii） 具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。

公开(公告)号：US08734896B2

公开(公告)日：2014-05-27

申请号：US13628092

申请日：2012-09-27

Applicant: H.C. Starck Inc.

Inventor： Scott Jeffrey Volchko ,  Stefan Zimmermann ,  Steven A. Miller ,  Michael Thomas Stawovy

IPC: B05D1/12

CPC classification number: H01J37/3429 ,  B05D1/02 ,  B23K31/02 ,  C23C14/3407 ,  C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332 ,  Y10T156/10

Abstract: A joined sputtering target comprising a sputtering material is formed by disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising at least one of an interlocking joint therein or a recess in a top surface thereof, and spray-depositing a spray material over at least a portion of the interface, thereby joining the tiles to form the joined sputtering target.

Abstract translation: 包括溅射材料的连接的溅射靶通过将包括溅射材料的两个离散的溅射靶瓷砖彼此靠近地设置，从而形成瓷砖之间的界面而形成，该界面包括其中的互锁接头或其中的凹部 并且在界面的至少一部分上喷射沉积喷涂材料，从而接合瓦片以形成连接的溅射靶。

公开(公告)号：US20130337159A1

公开(公告)日：2013-12-19

申请号：US13920534

申请日：2013-06-18

Applicant: H.C. Starck Inc.

Inventor： Steven A. Miller ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann ,  Olaf Schmidt-Park

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

Abstract translation: 在各种实施例中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，溅射靶材料（i）包括金属，（ii）在其中限定凹槽，以及（iii） 具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。