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公开(公告)号：US20230163558A1
公开(公告)日：2023-05-25
申请号：US17911189
申请日：2021-03-15
IPC分类号： H01S5/02257 , H01S5/02253 , H01S5/02216 , H01S5/00
CPC分类号： H01S5/02257 , H01S5/0064 , H01S5/02216 , H01S5/02253 , H01S5/3402
摘要： A quantum cascade laser device includes a QCL element and a package. A light-emitting window through which laser light emitted from the QCL element passes is provided on a side wall of the package. The light-emitting window includes a small-diameter hole, a large-diameter hole larger than the small-diameter hole, a counterbore surface having an annular shape that connects the small-diameter hole and the large-diameter hole, and a window member disposed inside the large-diameter hole. An incident surface of a window member includes a first region in which an anti-reflection film is provided, and a second region metallized and formed in an annular shape to be separated from the first region and to surround the first region. The second region is joined to the counterbore surface through a solder member.
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公开(公告)号：US20230133283A1
公开(公告)日：2023-05-04
申请号：US17914819
申请日：2021-03-25
摘要： A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate having a first end surface and a second end surface; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a center wavelength of 7.5 μm or more. The anti-reflection film includes an insulating film being a CeO2 film formed on the first end surface, a first refractive index film being a YF3 film or a CeF3 film disposed on a side opposite the first end surface with respect to the insulating film, and a second refractive index film formed on the first refractive index film on a side opposite the first end surface with respect to the first refractive index film and having a refractive index of larger than 1.8.
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公开(公告)号：US20230114599A1
公开(公告)日：2023-04-13
申请号：US17960281
申请日：2022-10-05
发明人： Atsushi SUGIYAMA , Kousuke SHIBATA
摘要： A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D1 ≤ S1 and D1 ≤ S2.
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公开(公告)号：US20230142086A1
公开(公告)日：2023-05-11
申请号：US17914828
申请日：2021-03-26
CPC分类号： H01S5/028 , H01S5/3401
摘要： A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include an active layer having a quantum cascade structure and to have a first end surface and a second end surface facing each other in a light waveguide direction; a first electrode; a second electrode; an insulating film continuously formed from the second end surface to a region on a second end surface side of at least one surface of a surface on an opposite side of the first electrode from the semiconductor laminate and a surface on an opposite side of the second electrode from the semiconductor substrate; and a metal film formed on the insulating film to cover at least the active layer when viewed in the light waveguide direction. An outer edge of the metal film does not reach the one surface when viewed in the light waveguide direction.
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公开(公告)号：US20230095425A1
公开(公告)日：2023-03-30
申请号：US17911206
申请日：2021-03-15
IPC分类号： H01S5/34 , H01S5/02253 , H01S5/02325 , H01S5/024
摘要： A quantum cascade laser device includes a QCL element; a lens; and a lens holder having a small-diameter hole, a large-diameter hole, and a counterbore surface. At least a part of a side surface of the lens is fixed to an inner surface of the large-diameter hole in a state where an edge portion of an incident surface of the lens is in contact with the counterbore surface. A central axis of the small-diameter hole is eccentric from that of the large-diameter hole. The side surface of the lens is positioned with respect to the inner surface of the large-diameter hole along a direction from the central axis of the large-diameter hole toward the central axis of the small-diameter hole. A central axis of the lens is disposed at a position closer to the central axis of the small-diameter hole than to the central axis of the large-diameter hole.
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公开(公告)号：US20210351570A1
公开(公告)日：2021-11-11
申请号：US17313389
申请日：2021-05-06
摘要： A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.
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