公开(公告)号：US20220037849A1

公开(公告)日：2022-02-03

申请号：US17414070

申请日：2019-12-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio ITO ,  Yoshitaka KUROSAKA ,  Masahiro HITAKA ,  Kazuyoshi HIROSE ,  Tadataka EDAMURA

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/343 ,  H01S5/0236 ,  G06F30/10

Abstract: The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

公开(公告)号：US20230307562A1

公开(公告)日：2023-09-28

申请号：US18023418

申请日：2021-05-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Masahiro HITAKA ,  Tadataka EDAMURA

IPC: H01L31/0352 ,  G01J3/45 ,  G01J3/457 ,  G01J3/10 ,  H01L23/482 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/035236 ,  G01J3/45 ,  G01J3/457 ,  G01J3/10 ,  H01L23/4821 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/035281 ,  H01L31/03046 ,  G01J2003/102

Abstract: A photodetector includes: a semiconductor substrate; a mesa portion formed on a major surface of the semiconductor substrate to extend along an optical waveguide direction; a first contact layer; a second contact layer; a first electrode; and an air bridge wiring electrically connected to the first contact layer and the first electrode. When viewed in a direction perpendicular to the major surface of the semiconductor substrate, a length of the mesa portion in the optical waveguide direction is longer than a length of the mesa portion in a direction perpendicular to the optical waveguide direction. The air bridge wiring is led out from the first contact layer to one side in the direction perpendicular to the optical waveguide direction, and is bridged between the first contact layer and the first electrode.

公开(公告)号：US20230133283A1

公开(公告)日：2023-05-04

申请号：US17914819

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Kousuke SHIBATA ,  Kazuue FUJITA ,  Masahiro HITAKA

IPC: H01S5/028 ,  H01S5/34 ,  H01S5/042 ,  H01S5/22

Abstract: A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate having a first end surface and a second end surface; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a center wavelength of 7.5 μm or more. The anti-reflection film includes an insulating film being a CeO2 film formed on the first end surface, a first refractive index film being a YF3 film or a CeF3 film disposed on a side opposite the first end surface with respect to the insulating film, and a second refractive index film formed on the first refractive index film on a side opposite the first end surface with respect to the first refractive index film and having a refractive index of larger than 1.8.

公开(公告)号：US20240195150A1

公开(公告)日：2024-06-13

申请号：US18286149

申请日：2022-03-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Masahiro HITAKA ,  Hiroki KAMEI ,  Takahiro SUGIYAMA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/11 ,  H01S5/323

CPC classification number: H01S5/18308 ,  H01S5/04252 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/323

Abstract: A surface-emitting laser device includes a first electrode, a lower cladding layer, an active layer, an upper cladding layer, a relaxation layer, a contacting layer having a bandgap different from that of the upper cladding layer, a second electrode, and a photonic crystal layer provided between the lower cladding layer and the active layer or between the active layer and the upper cladding layer, including a basic region and a plurality of different refractive index regions that differ in refractive index from the basic region and are distributed two-dimensionally in a plane perpendicular to a thickness direction to form a resonance mode of light in the plane. The relaxation layer has a bandgap that is between a bandgap of the upper cladding layer and a bandgap of the contacting layer.

公开(公告)号：US20210305786A1

公开(公告)日：2021-09-30

申请号：US17214084

申请日：2021-03-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Masahiro HITAKA

IPC: H01S5/34

Abstract: A QCL includes a semiconductor substrate and an active layer provided on the semiconductor substrate. The active layer has a cascade structure in which a unit laminate including a light emission layer which generates light and an injection layer to which electrons are transported from the light emission layer is laminated in multiple stages. The light emission layer and the injection layer each have a quantum well structure in which quantum well layers and barrier layers are alternately laminated. A separation layer including a separation quantum well layer having a layer thickness smaller than an average layer thickness of the quantum well layers included in the light emission layer and smaller than an average layer thickness of the quantum well layers included in the injection layer is provided between the light emission layer and the injection layer in the unit laminate.

公开(公告)号：US20230317867A1

公开(公告)日：2023-10-05

申请号：US18023435

申请日：2021-05-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Masahiro HITAKA ,  Tadataka EDAMURA

IPC: H01L31/0352 ,  H01L23/482 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304 ,  G01J3/10 ,  G01J3/45 ,  G01J3/457

CPC classification number: H01L31/035236 ,  H01L23/4821 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/035281 ,  H01L31/03046 ,  G01J3/10 ,  G01J3/45 ,  G01J3/457 ,  G01J2003/102

Abstract: A photodetection module includes a photodetector and a fixing member. The photodetector includes a semiconductor substrate, a mesa portion, a first contact layer, a second contact layer, and a first electrode formed in a planar shape on a major surface of the semiconductor substrate, and electrically connected to one of the first contact layer and the second contact layer. The fixing member includes an insulating substrate, and a first wiring formed in a planar shape on a major surface of the insulating substrate. A recessed portion is formed in the major surface of the insulating substrate, and at least a part of the mesa portion is disposed inside the recessed portion. The first electrode is electrically connected to the first wiring in a state where the first electrode is in surface contact with the first wiring.

公开(公告)号：US20230030197A1

公开(公告)日：2023-02-02

申请号：US17888623

申请日：2022-08-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Masahiro HITAKA ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: G01N21/39 ,  H01S5/40 ,  H01S5/34 ,  G01J3/427

Abstract: A beating spectroscopy device includes: first and second quantum cascade lasers; a quantum cascade detector; and a sample holder configured to hold a sample on an optical path between the second quantum cascade laser and the quantum cascade detector. Lights from the first and second quantum cascade lasers are detected by the quantum cascade detector while a wavelength of the light from the second quantum cascade laser is changed to scan a frequency of a beating signal having a frequency in accordance with a wavelength difference between the lights from the first and second quantum cascade lasers.

公开(公告)号：US20210351570A1

公开(公告)日：2021-11-11

申请号：US17313389

申请日：2021-05-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Masahiro HITAKA ,  Atsushi SUGIYAMA ,  Kousuke SHIBATA

IPC: H01S5/34 ,  H01S5/30 ,  H01S5/042

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

公开(公告)号：US20190326466A1

公开(公告)日：2019-10-24

申请号：US16386604

申请日：2019-04-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro HITAKA ,  Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Tadataka EDAMURA

IPC: H01L31/173 ,  H01S5/34 ,  H01L31/0352 ,  H01L31/0224 ,  H01S5/02 ,  H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/343 ,  H01L31/0304 ,  H01L31/18 ,  G01N21/25

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

公开(公告)号：US20190013647A1

公开(公告)日：2019-01-10

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira HIGUCHI ,  Yoshitaka KUROSAKA ,  Tadataka EDAMURA ,  Masahiro HITAKA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/18394 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.