中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

25 records (took 0.015 seconds)

    Photoelectric-surface electron source
    1.
    发明授权
    Photoelectric-surface electron source 有权

    公开(公告)号：US12142450B2

    公开(公告)日：2024-11-12

    申请号：US18021457

    申请日：2021-06-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomohiko Hirano ,  Hiroyuki Taketomi ,  Motohiro Suyama ,  Wataru Matsudaira ,  Akihiro Kageyama ,  Kota Iwasaki ,  Taku Yamada

    IPC: H01J1/34 ,  H01J1/88

    Abstract: A photoelectric-surface electron source includes: a glass substrate that receives laser light from a substrate light-receiving surface including microlenses and that focuses the laser light toward a substrate main surface located on the opposite side from the substrate light-receiving surface; a photoelectric surface that is provided to the substrate main surface, and that receives the focused laser light and emits photoelectrons; and an extraction electrode that is fixed to the substrate main surface and that extracts the photoelectrons from the photoelectric surface. The extraction electrode is disposed away from the photoelectric surface along the normal direction of the substrate main surface and has: an electrode part in which electrode holes for allowing the photoelectrons to pass therethrough are provided; and a frame part that is fixed to a region surrounding the photoelectric surface in the substrate main surface.

    High-energy ray detector and tomographic image acquisition apparatus
    2.
    发明授权
    High-energy ray detector and tomographic image acquisition apparatus 有权

    公开(公告)号：US10925557B2

    公开(公告)日：2021-02-23

    申请号：US16543728

    申请日：2019-08-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Motohiro Suyama ,  Hideki Shimoi ,  Ryosuke Ota ,  Ryoko Yamada

    IPC: A61B6/00 ,  G01T1/24 ,  A61B6/03

    Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (γ-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

    Solid-state imaging device
    3.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US09054000B2

    公开(公告)日：2015-06-09

    申请号：US13666149

    申请日：2012-11-01

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Motohiro Suyama ,  Akiomi Ujima ,  Kentaro Maeta ,  Hisanori Suzuki ,  Masaharu Muramatsu ,  Fumio Iwase

    IPC: H04N5/225 ,  H01L27/146

    CPC classification number: H01L27/14618 ,  H01L2224/16 ,  H01L2224/48091 ,  H04N5/2253 ,  H01L2924/00014

    Abstract: A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.

    Abstract translation: 固态成像装置2A包括CCD型固体摄像元件10，该CCD型固体摄像元件10具有由M×N像素构成的摄像面12，二维排列成M行N列，N信号读出电路20配置在一方 用于每个列相对于平面12的列方向的端侧，并分别根据从各列取出的电荷的大小输出电信号，用于数字转换的C-MOS型半导体元件 并顺序地输出作为串行信号从每个列的电路20输出的电信号，具有主表面81a和后表面81b的传热构件80和设置在表面81b上的冷却块84，以及半导体元件 50和传热构件80的表面81a彼此接合。

    Optically pumped magnetometer having lasers and optical systems used to derive an intensity of a magnetic field
    4.
    发明授权
    Optically pumped magnetometer having lasers and optical systems used to derive an intensity of a magnetic field 有权

    公开(公告)号：US11835603B2

    公开(公告)日：2023-12-05

    申请号：US17829413

    申请日：2022-06-01

    Applicant: HAMAMATSU PHOTONICS K.K. ,  Kyoto University

    Inventor： Akinori Saito ,  Takahiro Moriya ,  Takenori Oida ,  Motohiro Suyama ,  Tetsuo Kobayashi

    IPC: G01R33/26

    CPC classification number: G01R33/26

    Abstract: An optically pumped magnetometer includes cells configured to form a first cell region and a second cell region on a measurement target, a pump laser, a probe laser, a first optical system configured to cause pump light to be incident on the first cell region, a second optical system configured to cause the pump light having passed through the first cell region to be incident on the second cell region, a third optical system configured to cause first probe light to be incident on the first cell region, a fourth optical system configured to cause second probe light to be incident on the second cell region, detection portions configured to detect the first probe light having passed through the first cell region and the second probe light having passed through the second cell region, and a deriving portion configured to derive an intensity of a magnetic field.

    Ion detector
    5.
    发明授权
    Ion detector 有权
    离子检测器

    公开(公告)号：US08866071B2

    公开(公告)日：2014-10-21

    申请号：US13902084

    申请日：2013-05-24

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Masahiro Kotani ,  Takayuki Ohmura ,  Motohiro Suyama ,  Hiroshi Kobayashi

    IPC: G01T1/20 ,  G01T1/28 ,  G01T1/185

    CPC classification number: G01T1/2006 ,  G01T1/185 ,  G01T1/28

    Abstract: An ion detector for detecting positive ions and negative ions, includes a housing provided with an ion entrance to make the positive ions and the negative ions enter, a conversion dynode which is disposed in the housing and to which a negative potential is applied, a scintillator which is disposed in the housing and has an electron incident surface which is opposed to the conversion dynode and into which secondary electrons emitted from the conversion dynode are made incident, a conductive layer which is formed on the electron incident surface and to which a positive potential is applied, and a photodetector which detects light emitted by the scintillator in response to incidence of the secondary electrons.

    Abstract translation: 用于检测正离子和负离子的离子检测器包括设置有离子入口以使正离子和负离子进入的壳体，设置在壳体中并且施加负电位的转换倍增电极，闪烁体 其设置在壳体中并且具有与转换倍增电极相对的电子入射表面，并且从转换倍增极发射的二次电子入射到其中;形成在电子入射表面上并且具有正电位的导电层 以及光电检测器，其响应于二次电子的入射来检测由闪烁体发射的光。

    Ion detector
    9.
    发明授权
    Ion detector 有权
    离子检测器

    公开(公告)号：US08975592B2

    公开(公告)日：2015-03-10

    申请号：US13744863

    申请日：2013-01-18

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Hiroshi Kobayashi ,  Motohiro Suyama ,  Masahiro Kotani ,  Takayuki Ohmura

    IPC: G01T1/20 ,  G01T1/28

    CPC classification number: G01T1/28

    Abstract: An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.

    Abstract translation: 用于检测正离子的离子检测器1A设置有具有允许正离子进入的离子入口3的室2，设置在室2中并且施加负电位的转换倍增极9和雪崩光电二极管 30，其设置在室2中，并且具有与转换倍增极9相对的电子入射表面30a，并且入射从转换倍增极9发射的二次电子。 电子入射表面30a比在接地室2中支撑雪崩光电二极管30的定位部分14更靠近转换倍增极9。

    Photo-cathode for a vacuum system
    10.
    发明授权
    Photo-cathode for a vacuum system 有权

    公开(公告)号：US12261010B2

    公开(公告)日：2025-03-25

    申请号：US17619711

    申请日：2020-06-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Peter Uhd Jepsen ,  Simon Lehnskov Lange ,  Motohiro Suyama ,  Masahiko Iguchi

    IPC: H01J1/34 ,  H01J31/50 ,  H01J40/06 ,  H01J43/24

    Abstract: This invention concerns a photo-cathode for a vacuum system, wherein the photo-cathode is configured for receiving electromagnetic radiation having an incoming wavelength and for emitting electrons in response thereto. The photo-cathode comprises a conducting structure having a geometry, the geometry comprising a tip section. The tip section is adapted to provide field enhancement, β, when the conducting structure is illuminated with the electromagnetic radiation, wherein β is greater than about 102. The photo-cathode further comprising a substrate, the substrate being or comprising a dielectric substrate, the substrate supporting the conducting structure.

Patent Agency Ranking