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公开(公告)号：US20210057477A1
公开(公告)日：2021-02-25
申请号：US16963291
申请日：2018-11-27
发明人： Shin-ichiro TAKAGI , Yasuhito YONETA , Masaharu MURAMATSU , Nao INOUE , Hirokazu YAMAMOTO , Shinichi NAKATA , Takuo KOYAMA
IPC分类号： H01L27/146 , H01L23/00 , H01L23/31 , H01L21/56
摘要： A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.
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公开(公告)号：US20190080911A1
公开(公告)日：2019-03-14
申请号：US15765536
申请日：2016-09-01
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/14 , H01L23/522
摘要： Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.
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公开(公告)号：US20180286752A1
公开(公告)日：2018-10-04
申请号：US16000603
申请日：2018-06-05
IPC分类号： H01L21/77 , H01L27/146 , H04N5/369
摘要： A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.
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公开(公告)号：US20170301722A1
公开(公告)日：2017-10-19
申请号：US15505993
申请日：2015-08-04
IPC分类号： H01L27/148 , H01L27/146
摘要： A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.
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5.发明申请SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 有权固态图像拾取装置和制造固态图像拾取装置的方法公开(公告)号：US20150365613A1
公开(公告)日：2015-12-17
申请号：US14766788
申请日：2014-02-12
CPC分类号： H04N5/369 , H01L27/14683 , H01L27/14806 , H01L27/14812 , H01L27/14831 , H01L27/14856 , H04N5/353
摘要： A solid-state imaging device includes a light receiving section formed by such exposure as to stitch a plurality of patterns in a first direction on a semiconductor substrate. The light receiving section includes a plurality of pixels disposed in a two-dimensional array in the first direction and a second direction perpendicular to the first direction. Electric charges are transferred in the second direction in each of pixel columns consisting of a plurality of pixels disposed in the second direction, among the plurality of pixels.
摘要翻译： 固态成像装置包括通过这种曝光形成的光接收部分，以在半导体衬底上沿着第一方向缝合多个图案。 光接收部分包括在第一方向上以二维阵列设置的多个像素和垂直于第一方向的第二方向。 在多个像素之中，在由设置在第二方向上的多个像素组成的每个像素列中，在第二方向上传送电荷。
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公开(公告)号：US20180286901A1
公开(公告)日：2018-10-04
申请号：US15764492
申请日：2016-07-11
IPC分类号： H01L27/146 , H04N5/369 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/146 , H01L27/1462 , H01L31/02 , H04N5/369
摘要： A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.
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公开(公告)号：US20180286899A1
公开(公告)日：2018-10-04
申请号：US15942759
申请日：2018-04-02
IPC分类号： H01L27/146
摘要： A method of manufacturing an optical semiconductor device includes preparing a semiconductor substrate having a plurality of photoelectric conversion parts, forming a trench in the semiconductor substrate to separate the plurality of photoelectric conversion parts from each other, forming a boron layer on an inner surface of the trench by a vapor phase growth method, and forming an accumulation layer in the semiconductor substrate along the inner surface of the trench by performing a thermal diffusion treatment on the boron layer.
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公开(公告)号：US20150380580A1
公开(公告)日：2015-12-31
申请号：US14766778
申请日：2014-01-24
IPC分类号： H01L31/0352 , H01L31/10
摘要： A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.
摘要翻译： 背照式能量射线检测元件1包括半导体衬底和保护膜。 半导体衬底具有作为能量射线入射表面的第一主表面和与第一主表面相对的第二主表面，并且被配置为根据能量射线的入射产生电荷的电荷产生区域被布置在第二校准体上 表面 保护膜设置在半导体基板的第二主面侧，至少覆盖电荷产生区域，并且包括氮化硅或氮氧化硅。 保护膜具有减轻由保护膜产生的应力的应力消除部。
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公开(公告)号：US20150340398A1
公开(公告)日：2015-11-26
申请号：US14760258
申请日：2013-09-24
IPC分类号： H01L27/146 , H01L23/498 , H01L23/00
CPC分类号： H01L27/14636 , H01L23/49838 , H01L23/4985 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L27/14618 , H01L27/14634 , H01L2224/05553 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48997 , H01L2224/4911 , H01L2224/49175 , H01L2224/49429 , H01L2224/78301 , H01L2224/85181 , H01L2224/85207 , H01L2224/85951 , H01L2224/85986 , H01L2924/00014 , H01L2924/10161 , H01L2924/15787 , H01L2924/19107 , H01L2924/00 , H01L2224/85399 , H01L2224/05599 , H01L2224/48455
摘要： An electronic component device includes a first electronic component on which a first electrode pad is disposed, a second electronic component on which a second electrode pad having a first pad portion and a second pad portion is disposed, a first bonding wire having one end connected to the first electrode pad and the other end connected to the first pad portion, and a second bonding wire having one end connected to a connection portion between the first pad portion and the first bonding wire and the other end connected to the second pad portion. The second electrode pad is disposed on the second electronic component so that the first pad portion and the second pad portion are laid along a direction intersecting with an extending direction of the first bonding wire. The extending direction of the first bonding wire intersects with an extending direction of the second bonding wire.
摘要翻译： 电子部件装置包括：第一电子部件，配置有第一电极焊盘;第二电子部件，具有第一焊盘部和第二焊盘部的第二电极焊盘，第一焊接线的一端连接到 第一电极焊盘和另一端连接到第一焊盘部分，以及第二接合线，其一端连接到第一焊盘部分和第一焊接线之间的连接部分，而另一端连接到第二焊盘部分。 第二电极焊盘设置在第二电子部件上，使得第一焊盘部分和第二焊盘部分沿着与第一焊接线的延伸方向交叉的方向放置。 第一接合线的延伸方向与第二接合线的延伸方向相交。
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公开(公告)号：US20220344520A1
公开(公告)日：2022-10-27
申请号：US17762847
申请日：2020-08-28
IPC分类号： H01L31/02 , H01L27/146 , H01L31/0203
摘要： The photodetector includes a light receiving element and a package. The package has an accommodation member formed of a ceramic, a wiring including a pad connected to a terminal of the light receiving element by a wire, and a light transmitting member. A bottom wall of the accommodation member has a placement surface to which the light receiving element is attached by an adhesive member. The bottom wall or a side wall of the accommodation member has a pad surface on which the pad is disposed, the pad surface positioned on an opening side of the accommodation member with respect to the placement surface. The side wall has a through hole. At least a portion of an inner end portion of the through hole is positioned on the opening side with respect to a surface of the light receiving element on the opening side.
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