公开(公告)号：US20220148848A1

公开(公告)日：2022-05-12

申请号：US17430019

申请日：2019-11-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasumasa HAMANA ,  Hiroyuki WATANABE ,  Kenshi SHIMANO ,  Hiroji NISHIZAWA

IPC: H01J37/22 ,  H01J9/22

Abstract: A method of manufacturing a phosphor panel includes: forming a phosphor layer having a plurality of phosphor particles on an exit window; forming an organic film on the phosphor layer; forming a metal reflection film on the organic film; forming an oxide film on the metal reflection film; removing the organic film by firing; and forming an oxide film integrally covering a surface of the metal reflection film and surfaces of the phosphor particles by atomic layer deposition.

公开(公告)号：US20200234935A1

公开(公告)日：2020-07-23

申请号：US16634693

申请日：2018-05-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki NAGATA ,  Yoshihiro ISHIGAMI ,  Yasumasa HAMANA

IPC: H01J40/06 ,  H01J40/16

Abstract: A transmissive photocathode includes a light transmitting substrate that has a first surface on which light is incident and a second surface which emits light incident from a side of the first surface, a photoelectric conversion layer that is provided on the second surface side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons, a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene, and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity. A thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene.

公开(公告)号：US20210118655A1

公开(公告)日：2021-04-22

申请号：US16623511

申请日：2018-04-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daichi MASUKO ,  Hajime NISHIMURA ,  Yasumasa HAMANA ,  Hiroyuki WATANABE

IPC: H01J43/24

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material includes a metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

公开(公告)号：US20180247802A1

公开(公告)日：2018-08-30

申请号：US15756217

申请日：2016-08-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki NAGATA ,  Yasumasa HAMANA ,  Hajime NISHIMURA ,  Kimitsugu NAKAMURA

IPC: H01J43/24 ,  H01J9/12

CPC classification number: H01J43/246 ,  H01J9/125 ,  H01J43/24 ,  H01J2201/32

Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.

公开(公告)号：US20200176236A1

公开(公告)日：2020-06-04

申请号：US16624027

申请日：2018-04-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daichi MASUKO ,  Yasumasa HAMANA ,  Hajime NISHIMURA ,  Hiroyuki WATANABE

IPC: H01J43/24

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

公开(公告)号：US20160233044A1

公开(公告)日：2016-08-11

申请号：US15029336

申请日：2014-08-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki NAGATA ,  Yasumasa HAMANA ,  Kimitsugu NAKAMURA

IPC: H01J1/34 ,  H01J43/10 ,  H01J43/08 ,  H01J1/32 ,  H01J40/06

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.

Abstract translation: 透射模式光电阴极包括：具有入射光的外表面的光学透明基板和入射到外表面侧的光的内表面; 光电转换层，设置在所述光学透明基板的内表面侧，并且被配置为将从所述内表面输出的光转换为光电子或光电子; 以及包含石墨烯的光学透明导电层，并设置在光学透明基板和光电转换层之间。

公开(公告)号：US20210134572A1

公开(公告)日：2021-05-06

申请号：US16623517

申请日：2018-04-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daichi MASUKO ,  Hajime NISHIMURA ,  Yasumasa HAMANA ,  Hiroyuki WATANABE

IPC: H01J43/24

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at −60° C. is 10 times or less, and a resistance value at +60° C. is 0.25 times or more, relative to a resistance value at a temperature of 20° C.

公开(公告)号：US20200027709A1

公开(公告)日：2020-01-23

申请号：US16489004

申请日：2018-01-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki NAGATA ,  Yasumasa HAMANA ,  Hajime NISHIMURA ,  Daichi MASUKO

IPC: H01J43/24

Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on at least a part of the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of MgO, the second film is made of SiO2, and the second film is thinner than the first film.