公开(公告)号：US08981338B2

公开(公告)日：2015-03-17

申请号：US13849139

申请日：2013-03-22

Applicant: Sanken Electric Co., Ltd. ,  Hamamatsu Photonics K.K.

Inventor： Shunro Fuke ,  Tetsuji Matsuo ,  Yoshihiro Ishigami ,  Tokuaki Nihashi

IPC: H01J1/308 ,  H01J1/34 ,  H01J9/12 ,  H01J31/50 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J9/025 ,  H01J9/12 ,  H01J31/26 ,  H01J31/507

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0≦X

Abstract translation: 半导体光电阴极包括通过SiO 2层和形成在AlXGa1-XN层上的含碱金属的层结合到玻璃基板上的Al x Ga 1-x N层（0＆lt; nlE; X <1）。 AlXGa1-XN层包括第一区域，第二区域，第一区域和第二区域之间的中间区域。 第二区域具有通过交替层叠阻挡层和阱层而形成的半导体超晶格结构，中间区域具有通过交替层压阻挡层和阱层而形成的半导体超晶格结构。 当一对相邻的阻挡层和阱层被定义为单位部分时，单位部分中Al的组成比X的平均值随着距离第二区域和SiO 2层之间的界面位置的距离而至少在 中间区域。

公开(公告)号：US10790129B2

公开(公告)日：2020-09-29

申请号：US16634693

申请日：2018-05-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki Nagata ,  Yoshihiro Ishigami ,  Yasumasa Hamana

IPC: H01J40/06 ,  H01J40/16

Abstract: A transmissive photocathode includes a light transmitting substrate that has a first surface on which light is incident and a second surface which emits light incident from a side of the first surface, a photoelectric conversion layer that is provided on the second surface side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons, a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene, and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity. A thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene.