SEMICONDUCTOR LASER DEVICE
    2.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权
    半导体激光器件

    公开(公告)号:US20170033537A1

    公开(公告)日:2017-02-02

    申请号:US15124778

    申请日:2015-03-03

    Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θS (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θS/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θS/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers.

    Abstract translation: 半导体激光器件包括:半导体激光器阵列,其中布置有沿慢轴方向发射发散角θS(> 4°)的激光的多个有源层; 第一光学元件,其通过第一反射表面反射第一部分光,并将第一部分光返回到有源层; 以及第二光学元件,其通过第二反射面反射第二部分光的部分模式光,并且将部分模式光返回到有源层,第一反射面形成等于或大于2°并小于(θS/ 2),垂直于有源层的光轴方向的平面,并且第二反射表面与垂直于光轴方向的平面形成大于(-θS/ 2)且等于或小于-2°的角度 的活性层。

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