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公开(公告)号:US20210313769A1
公开(公告)日:2021-10-07
申请号:US17265983
申请日:2019-05-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yujin ZHENG , Takashi SEKINE , Yoshinori KATO , Norio KURITA , Toshiyuki KAWASHIMA
Abstract: An external resonator-type semiconductor laser device 1A includes an external resonator formed of one or a plurality of laser diode light sources and a VBG; an optical fiber which outputs output light La from the laser diode light source toward the VBG, and into which return light Lb from the VBG is input; and a displacement unit that displaces a disposition position of the VBG with respect to an input and output end surface of the optical fiber.
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公开(公告)号:US20170033537A1
公开(公告)日:2017-02-02
申请号:US15124778
申请日:2015-03-03
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yujin ZHENG , Hirofumi KAN
CPC classification number: H01S5/4062 , H01S3/0804 , H01S3/08081 , H01S3/0815 , H01S5/02438 , H01S5/026 , H01S5/10 , H01S5/141 , H01S5/4025 , H01S5/405 , H01S5/4068 , H01S5/42
Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θS (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θS/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θS/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers.
Abstract translation: 半导体激光器件包括:半导体激光器阵列,其中布置有沿慢轴方向发射发散角θS(> 4°)的激光的多个有源层; 第一光学元件,其通过第一反射表面反射第一部分光,并将第一部分光返回到有源层; 以及第二光学元件,其通过第二反射面反射第二部分光的部分模式光,并且将部分模式光返回到有源层,第一反射面形成等于或大于2°并小于(θS/ 2),垂直于有源层的光轴方向的平面,并且第二反射表面与垂直于光轴方向的平面形成大于(-θS/ 2)且等于或小于-2°的角度 的活性层。
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