公开(公告)号：US09786777B2

公开(公告)日：2017-10-10

申请号：US14913980

申请日：2013-08-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge ,  Leong Yap Chia ,  Pin Chin Lee ,  Jose Jehrome Rando

IPC: H01L21/00 ,  H01L29/74 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.

公开(公告)号：US10084062B2

公开(公告)日：2018-09-25

申请号：US15657401

申请日：2017-07-24

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge ,  Leong Yap Chia ,  Pin Chin Lee ,  Jose Jehrome Rando

IPC: H01L29/66 ,  H01L21/332

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.

公开(公告)号：US09950520B2

公开(公告)日：2018-04-24

申请号：US15516648

申请日：2014-10-28

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Leong Yap Chia ,  Pin Chin Lee

IPC: B41J2/175 ,  B41J2/045 ,  B41J2/135

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/0458 ,  B41J2/135 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A printhead having a number of single-dimensional memristor banks is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of single-dimensional memristor banks. Each memristor bank includes a number of memristors arranged in a single dimension and a number of serially-connected de-multiplexers to selectively activate a target memristor of the memristor bank. The number of serially-connected de-multiplexers is equal to the number of memristors and an output of at least one de-multiplexer is an input into a subsequent de-multiplexer.