公开(公告)号：US20190324160A1

公开(公告)日：2019-10-24

申请号：US16197444

申请日：2018-11-21

Applicant: HITACHI, LTD.

Inventor： Kazuyuki HOZAWA ,  Takashi TAKAHAMA

IPC: G01T1/29 ,  H01L27/146

Abstract: An X-ray detector and an X-ray measurement device capable of improving detection efficiency of an X-ray while maintaining high resolution are provided. An X-ray detector includes: a first SDD chip that detects a fluorescent X-ray generated from a sample with a first energy sensitivity; a second SDD chip that detects the fluorescent X-ray with a second energy sensitivity different from the first energy sensitivity; a first signal line electrically connected to the first SDD chip; and a second signal line electrically connected to the second SDD chip. The X-ray detector further includes an amplifier that is electrically connected to the first signal line and the second signal line and amplifies a signal.

公开(公告)号：US20170082877A1

公开(公告)日：2017-03-23

申请号：US15311434

申请日：2014-06-19

Applicant: HITACHI, LTD.

Inventor： Hideo ARIMOTO ,  Kazuki TANI ,  Takashi TAKAHAMA ,  Daisuke RYUZAKI ,  Yoshitaka SASAGO

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/0151 ,  G02F2001/212 ,  G02F2202/104

Abstract: In an optical modulator 115 of an embodiment, an optical waveguide core 121 is configured from an n− type semiconductor region 134, a gate insulating film 136 on the n− type semiconductor region 134, and a p− type semiconductor region 137 on the gate insulating film 136. Further, a width W1 of the n− type semiconductor region 134 and a width W1 of the p− type semiconductor region 137 are equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

公开(公告)号：US20160141371A1

公开(公告)日：2016-05-19

申请号：US14897247

申请日：2013-06-06

Applicant: HITACHI, LTD.

Inventor： Naoki TEGA ,  Keisuke KOBAYASHI ,  Koji FUJISAKI ,  Takashi TAKAHAMA

IPC: H01L29/16 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L21/04 ,  H01L21/02 ,  H01L29/78 ,  H01L29/167 ,  H01L29/10

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0465 ,  H01L21/0485 ,  H01L29/0619 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7811

Abstract: In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Abstract translation: 为了提供高性能和可靠的碳化硅半导体器件，在包括n型SiC外延衬底，p型体层，p型体层电位固定区和氮化硅电极固定区的碳化硅半导体器件中， 引入形成在p型体层中的n型第一源极区域，在氮 - 氮化物区域内形成n型第二源区，其中具有高于氮的固溶度极限的磷并容易扩散的磷， 引入n型第一源极区域以与p型体层电位固定区域和p型体层电位固定区域分离。

公开(公告)号：US20150349115A1

公开(公告)日：2015-12-03

申请号：US14760166

申请日：2013-01-23

Applicant: HITACHI, LTD.

Inventor： Naoki TEGA ,  Digh HISAMOTO ,  Satoru AKIYAMA ,  Takashi TAKAHAMA ,  Tadao MORIMOTO ,  Ryuta TSUCHIYA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L21/265

CPC classification number: H01L29/7813 ,  H01L21/02529 ,  H01L21/047 ,  H01L21/26513 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7811

Abstract: Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body layer 105 includes an n-type resistance relaxation layer 109 covering the bottom portion of the trench, and a p-type field relaxation layer 108. The p-type field relaxation layer 108 is separated from the trench bottom portion via the resistance relaxation layer 109, and is wider than the resistance relaxation layer 109. This achieves a low ON resistance, high reliability, and high voltage resistance at the same time. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled to achieve a high switching rate and high reliability.

Abstract translation: 这里公开了一种实现高性能和高可靠性的碳化硅半导体器件的技术。 具有通过p型体层105形成在漂移中的沟槽的沟槽MISFET包括覆盖沟槽底部的n型电阻缓和层109和p型场弛豫层108. p型场 松弛层108经由电阻缓和层109与沟槽底部分离，并且比电阻缓和层109宽。这样实现了低导通电阻，高可靠性和高耐压性。 通过在沟槽下方形成场弛豫层，可以控制反馈电容以实现高开关率和高可靠性。