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公开(公告)号：US10310525B2
公开(公告)日：2019-06-04
申请号：US15538780
申请日：2015-11-27
IPC分类号： G05F1/56 , G01R19/00 , G05F1/46 , G05F1/565 , B23K11/24 , H02M3/158 , B03C3/68 , H02M5/257 , H02M3/156
摘要： Provided is an electronic device which can easily measure a standby current of an internal circuit of an electronic device after burn-in. The electronic device includes: a power source terminal; a regulator that generates a predetermined voltage from a voltage of the power source terminal; an internal circuit that is operated by an output voltage of the regulator; and a standby terminal through which the regulator and the internal circuit are set to a low power consumption state.
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公开(公告)号：US11422016B2
公开(公告)日：2022-08-23
申请号：US17041659
申请日：2019-02-15
摘要： Provided is a thermal flow rate meter capable of individually correcting different pulsation errors generated in an upstream side temperature sensor and a downstream side temperature sensor. A thermal flow rate meter 1 which measures a flow rate of a gas based on a temperature difference between an upstream side temperature sensor 12 and a downstream side temperature sensor 13, which are arranged on the upstream side and the downstream side of a heating element 11. The thermal flow rate meter includes: a detection element 10 that individually outputs an output signal of the upstream side temperature sensor 12 and an output signal of the downstream side temperature sensor 13; and compensator 20 that individually performs response compensation of the output signal of the upstream side temperature sensor 12 and the output signal of the downstream side temperature sensor 13.
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公开(公告)号：US11381228B2
公开(公告)日：2022-07-05
申请号：US16760430
申请日：2018-11-08
发明人： Masahiro Matsumoto , Hiroshi Nakano , Akira Kotabe
IPC分类号： G05F3/26 , H03K5/1252 , H03K19/003 , H03K17/16
摘要： A sensor output circuit is limited with high accuracy, and reduces radio wave radiation by signal transmission using a single-line signal. The sensor output includes a pulse signal Vin that changes according to a physical quantity to be measured, MOS transistors that perform on/off operations according to the pulse signal Vin, a constant current source that generates a constant current, a MOS transistor which generates a gate voltage of a MOS transistor, MOS transistors which form a current mirror circuit, and the MOS transistor which works to maintain a drain voltage of the MOS transistor at a constant voltage, and the output terminal which is driven by the MOS transistors connected in series. In addition, an output signal from the sensor output circuit is transmitted to a control circuit via an output signal line. The control circuit includes a pull-up resistor, a capacitor, and an input gate circuit.
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4.发明授权公开(公告)号：US10096590B2
公开(公告)日：2018-10-09
申请号：US15511106
申请日：2014-09-16
IPC分类号： H01L23/552 , H01L27/02 , H01L29/72 , H01L29/861 , H01L21/822 , H01L27/04
摘要： In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5. In addition, the signal processing integrated circuit 5 comprises: a signal processing circuit 6 that processes the output signal output from the sensor element 4; a resistance element 8 that is connected between the output terminal 11 and the signal processing circuit 6, and that is disposed on an insulating film; diode elements 9, 10 that are connected between the output terminal 11 and the ground terminal 3, and that are serially connected with each other in opposite directions; and a capacitance element 7 that is connected between the ground terminal 3 and the signal processing circuit 6 side of the resistance element 8.
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公开(公告)号：US10882471B2
公开(公告)日：2021-01-05
申请号：US15769700
申请日：2016-09-13
IPC分类号： B60R16/02 , G05F1/56 , H01L29/00 , B60W50/00 , H03K17/082 , F02D45/00 , B60L3/04 , H03K17/22 , F02D41/26
摘要： Even when a positive/negative surge is applied to a power-supply line, occurrence of malfunction in a semiconductor device is lessened. In an in-vehicle semiconductor device, regulators convert an externally-supplied voltage to generate voltages. A voltage monitoring unit includes a voltage monitoring circuit and a switch, and monitors first to third voltages. An internal circuit has a processor operated by the voltage, and an oscillator operated by the voltage and generating a clock signal to be provided the processor. The voltage monitoring unit stops providing the clock signal to the processor when the voltage level of at least any one of the first to third voltages is below a set value. The voltage monitoring unit provides the clock signal to the processor when the voltage levels of all the first to third voltages exceed the set value.
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公开(公告)号：US10720418B2
公开(公告)日：2020-07-21
申请号：US16495564
申请日：2017-09-12
摘要： A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.
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公开(公告)号：US10444031B2
公开(公告)日：2019-10-15
申请号：US15500426
申请日：2014-09-16
IPC分类号： G05F1/573 , G01D3/028 , G05F1/569 , H02H1/00 , H02H3/22 , H02M3/158 , H02H9/02 , H02M1/32 , H03K17/082
摘要： Provided is a sensor device wherein malfunction due to a negative surge is suppressed. This sensor device is provided with: a sensor element wherein electrical characteristics change corresponding to physical quantities; a signal processing circuit that processes output signals of the sensor element; a first transistor element that supplies currents to the sensor element and the signal processing circuit; a control circuit that controls a base current of the first transistor element; a power supply terminal; and a ground terminal. The sensor device is characterized in that the control circuit is provided with a limiting section that limits a current flowing from the ground terminal toward a base terminal of the first transistor element.
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公开(公告)号：US11590906B2
公开(公告)日：2023-02-28
申请号：US16956319
申请日：2019-01-28
发明人： Akira Kotabe , Shinya Matohara
IPC分类号： B60R16/02 , B60R16/023 , G01F1/698
摘要： Provided is a vehicle-mounted system capable of transmitting a command to a first system from a second system during a period in which the first system communicates with the second system according to a unidirectional communication protocol. A vehicle-mounted system 100 includes a sensor 10 (first system) and an ECU (second system). The sensor 10 outputs a message signal including a pause pulse to the communication line DATA according to SENT (a unidirectional communication protocol). The ECU 20 is connected to the communication line DATA, and transmits a command to the sensor 10 using the falling period of the pause pulse.
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公开(公告)号：US11467016B2
公开(公告)日：2022-10-11
申请号：US17058268
申请日：2019-05-09
发明人： Tatsuo Nakagawa , Akeo Satoh , Akira Kotabe , Masahiro Matsumoto
摘要： Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.
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公开(公告)号：US11043485B2
公开(公告)日：2021-06-22
申请号：US16461684
申请日：2017-12-20
摘要： In a protective circuit of a conventional electronic device, surge resistance is low and it is difficult to connect an external connection terminal of an integrated circuit directly to an external connection terminal of the electronic device or the like. A protective circuit of an electronic device according to the present embodiment includes an external connection terminal 1 which is connected to an external signal; a wiring layer 2 which connects the external connection terminal 1 and a protective resistor 3; a protective resistor 3 which protects an internal circuit from surges or noises input from the external connection terminal 1; slits which divide the protective resistor 3; current distribution resistors which are constituted by dividing the protective resistor 3 by the slits; and MOS transistors which are connected to the current distribution resistors.
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