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公开(公告)号：US20190043851A1
公开(公告)日：2019-02-07
申请号：US16075009
申请日：2017-01-12
发明人： Shinichirou WADA , Katsumi IKEGAYA
IPC分类号： H01L27/02 , H01L27/12 , H01L21/762 , H01L27/088
CPC分类号： H01L27/0207 , H01L21/76224 , H01L27/0211 , H01L27/0266 , H01L27/088 , H01L27/1203 , H01L29/7393 , H03K17/0822
摘要： To provide a semiconductor device capable of restricting the substrate bias effect of a high-side transistor while enhancing the heat radiation property of a low-side transistor.A high-side NMOS transistor 101 is formed in a region S1 on the surface of a SOI substrate 30. A trench 41 surrounds the high-side NMOS transistor 101. SiO2 (first insulator) embeds the trench 41. A low-side NMOS transistor 102 is formed in a region S2 on the surface of the SOI substrate 30 around the trench 41. The side face Sf connecting the region S2 forming the low-side NMOS transistor 102 therein and the backside of the SOI substrate 30 is exposed.
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公开(公告)号：US20200211745A1
公开(公告)日：2020-07-02
申请号：US16624415
申请日：2018-04-19
摘要： An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.
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3.发明申请公开(公告)号：US20180211898A1
公开(公告)日：2018-07-26
申请号：US15744418
申请日：2016-08-02
IPC分类号： H01L23/367 , H01L29/06 , H01L27/12 , H01L27/02 , H01L29/78
CPC分类号： H01L23/367 , H01L21/76 , H01L21/76264 , H01L21/76283 , H01L21/823481 , H01L23/34 , H01L23/3677 , H01L27/0207 , H01L27/0211 , H01L27/088 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/7824
摘要： Provided is a vehicle-mounted semiconductor device enabling a temperature increase of active elements to be restricted. A vehicle-mounted semiconductor device includes: a semiconductor substrate; a plurality of active elements formed on the semiconductor substrate; a plurality of trenches surrounding the plurality of active elements to insulate and separate the active elements; and a terminal connecting in parallel the plurality of active elements insulated and separated by different trenches among the plurality of trenches and connected to an outside.
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公开(公告)号：US20210233935A1
公开(公告)日：2021-07-29
申请号：US16972130
申请日：2019-04-23
发明人： Takayuki OSHIMA , Katsumi IKEGAYA , Masato KITA , Keishi KOMORIYAMA , Kiyotaka KANNO , Shinichirou WADA
IPC分类号： H01L27/12
摘要： Provided are a semiconductor device having small characteristic variations with time and high reliability and an in-vehicle control device using the same, the semiconductor device including a plurality of transistor elements constituting a current mirror circuit or a differential amplifier circuit that requires high relative accuracy. A semiconductor device includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor paired with the first MOS transistor, and insulation separation walls which insulate and separate elements from each other, wherein relative characteristics of the first MOS transistor and the second MOS transistor are in a predetermined range, the first MOS transistor and the second MOS transistor are relatively arranged in a gate width direction or a gate length direction, and distances between gate oxide films of the first MOS transistor and the second MOS transistor and the insulation separation walls facing the gate oxide films are the same as each other in a direction perpendicular to the gate width direction or the gate length direction.
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公开(公告)号：US20200227409A1
公开(公告)日：2020-07-16
申请号：US16624166
申请日：2018-04-16
发明人： Shinichirou WADA , Katsumi IKEGAYA
IPC分类号： H01L27/088 , G05F1/567
摘要： Restraining a reduction in an electric current detection accuracy, which is due to the temperature difference between an output MOS transistor and a sense MOS transistor, and easing a limitation on the layout of the sense MOS transistor. A semiconductor device includes: an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and outputs an electric current for driving an external load; and a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor.
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公开(公告)号：US20180247892A1
公开(公告)日：2018-08-30
申请号：US15752818
申请日：2016-07-25
发明人： Katsumi IKEGAYA , Takayuki OSHIMA
IPC分类号： H01L23/522 , H01L27/088
CPC分类号： H01L23/5228 , H01F7/064 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/5226 , H01L27/088 , H01L29/78
摘要： On a transistor layer having arranged thereon multiple transistors each including a drain, a source, and a gate, metal interconnection layers serving as input side interconnection layers connected to the drains of the respective transistors and metal interconnection layers serving as output side interconnection layers connected to the sources of the respective transistors are arranged in parallel. Also provided are a plurality of through holes connecting the metal interconnection layers serving as input side interconnection layers to the drains of the respective transistors and connecting the metal interconnection layers serving as output side interconnection layers to the sources of the respective transistors. Resistance values of the plurality of through holes are changed along an arranging direction of the input side interconnection layers and the output side interconnection layers. Accordingly, current densities of the transistors arranged to be distributed in a two-dimensional manner can be uniform.
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公开(公告)号：US20180218936A1
公开(公告)日：2018-08-02
申请号：US15741614
申请日：2016-07-01
IPC分类号： H01L21/762 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/786 , H03K17/687
摘要： It is an object of the present invention to provide a switch element and a load driving apparatus capable of suppressing a characteristic change of an on-resistance without lowering an off-breakdown voltage. The switching element includes a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode. Alternatively, in the load driving apparatus including a current driving switch element and a current detecting switch element that is connected in parallel to the load driving switch element and that detects an energization current of the load driving switch element, the current detecting switch element includes at least a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode.
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