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1.发明授权公开(公告)号：US10408762B2
公开(公告)日：2019-09-10
申请号：US14825098
申请日：2015-08-12
IPC分类号： H01L21/66 , H01L21/67 , H01L21/3065 , G01N21/68 , H01J37/32
摘要： A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.
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公开(公告)号：US10262842B2
公开(公告)日：2019-04-16
申请号：US14303636
申请日：2014-06-13
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311
摘要： There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.
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公开(公告)号：US09464936B2
公开(公告)日：2016-10-11
申请号：US14023831
申请日：2013-09-11
CPC分类号： G01J3/443 , G01N21/68 , H01J37/32972 , H01J2237/334
摘要： An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
摘要翻译： 蚀刻装置从蚀刻处理期间的由发光分光器测定的发光的信息的信息中计算出特定元素应发光的多个波长中的每一个附近的发光强度，如果确定计算出的 存储在存储单元中的发光强度信息和发光强度信息相似，以与元件相关联的波长提取对应于计算的发射强度的波长。
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4.发明授权Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus 有权等离子体处理装置的数据分析方法，等离子体处理方法和等离子体处理装置公开(公告)号：US09324588B2
公开(公告)日：2016-04-26
申请号：US14625855
申请日：2015-02-19
CPC分类号： H01J37/32926 , G01J3/28 , G01J3/443 , H01J37/32009 , H01J37/3244 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67253
摘要： A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.
摘要翻译： 通过指定波长和时间间隔的组合，在较早的阶段实现了稳定的蚀刻工艺，其在短时间段内呈现蚀刻处理结果的最小预测误差。 为此，波长和时间间隔的组合是从样品蚀刻时产生的等离子体发射的波长带产生的，对于波长和时间间隔的每个组合，波长组合计算蚀刻处理结果预测的预测误差 基于所计算的预测误差来指定预测误差，通过改变相对于指定波长组合的时间间隔来进一步计算预测误差，并且将表现出计算出的预测误差的最小值的波长和时间间隔的组合选择为 波长和用于预测蚀刻处理过程的时间间隔。
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公开(公告)号：US09091595B2
公开(公告)日：2015-07-28
申请号：US13945285
申请日：2013-07-18
CPC分类号： G01J1/42 , G01J3/443 , H01J37/32935 , H01J37/32963 , H01J37/32972
摘要： Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.
摘要翻译： 在多个OES数据波长中，分析装置通过以下步骤来识别来自腔室内的多个发光波长的等离子体中包含的物质的光发射的波长：在蚀刻处理期间测量腔室内的光发射 半导体晶片; 发现由于室内光发射强度的每个波长随时间的变化引起的时间波动; 比较从预先指定的物质发射的光的波长的基于时间的波动; 并且通过使用比较结果，识别由室内的发光引起的从物质发射的光的波长。
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公开(公告)号：US20190189397A1
公开(公告)日：2019-06-20
申请号：US16281652
申请日：2019-02-21
IPC分类号： H01J37/32
CPC分类号： H01J37/3299 , B81C2201/0132 , H01J37/32926 , H01J37/32972 , H01J2237/334 , H01L21/31138 , H01L21/67069
摘要： There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.
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公开(公告)号：US09443704B2
公开(公告)日：2016-09-13
申请号：US15074204
申请日：2016-03-18
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32926 , G01J3/28 , G01J3/443 , H01J37/32009 , H01J37/3244 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67253
摘要： A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.
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公开(公告)号：US11538671B2
公开(公告)日：2022-12-27
申请号：US16666842
申请日：2019-10-29
IPC分类号： H01J37/32
摘要： In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.
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公开(公告)号：US11410836B2
公开(公告)日：2022-08-09
申请号：US16281652
申请日：2019-02-21
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311
摘要： There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.
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公开(公告)号：US10510519B2
公开(公告)日：2019-12-17
申请号：US15050631
申请日：2016-02-23
IPC分类号： H01J37/32
摘要： In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.
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