-
公开(公告)号：US10290472B2
公开(公告)日：2019-05-14
申请号：US15072392
申请日：2016-03-17
发明人： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Kenji Maeda , Yutaka Kouzuma , Satoshi Sakai , Masaru Izawa
摘要： In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.
-
公开(公告)号：US10418254B2
公开(公告)日：2019-09-17
申请号：US15906862
申请日：2018-02-27
发明人： Kazunori Shinoda , Naoyuki Kofuji , Hiroyuki Kobayashi , Nobuya Miyoshi , Kohei Kawamura , Masaru Izawa , Kenji Ishikawa , Masaru Hori
IPC分类号： H01L21/67 , H01L21/3213 , H01L27/115 , H01J37/00 , H01L21/3065
摘要： In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.
-
公开(公告)号：US10937635B2
公开(公告)日：2021-03-02
申请号：US16378783
申请日：2019-04-09
发明人： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Kenji Maeda , Yutaka Kouzuma , Satoshi Sakai , Masaru Izawa
摘要： In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.
-
公开(公告)号：USD900760S1
公开(公告)日：2020-11-03
申请号：US29677753
申请日：2019-01-23
-
公开(公告)号：US10325781B2
公开(公告)日：2019-06-18
申请号：US15698823
申请日：2017-09-08
发明人： Kazunori Shinoda , Satoshi Sakai , Masaru Izawa , Nobuya Miyoshi , Hiroyuki Kobayashi , Yutaka Kouzuma , Kenji Ishikawa , Masaru Hori
IPC分类号： H01L21/321 , H01L21/3213 , H01L21/311 , H01L21/67 , H01L27/11556 , H01L27/11582
摘要： A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.
-
公开(公告)号：US10192720B2
公开(公告)日：2019-01-29
申请号：US15210257
申请日：2016-07-14
发明人： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Kenji Maeda , Satoshi Sakai , Masaru Izawa
摘要： A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.
-
公开(公告)号：US10141207B2
公开(公告)日：2018-11-27
申请号：US15468259
申请日：2017-03-24
摘要： A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.017 秒)
