公开(公告)号：US3889210A

公开(公告)日：1975-06-10

申请号：US40092373

申请日：1973-09-26

Applicant: HITACHI LTD

Inventor： MATSUURA SHIGEO ,  SAITOH TAKESHI ,  MIYAMOTO HIROSHI

IPC: H03B1/00 ,  H03B5/12 ,  H04B1/26 ,  H04N5/44 ,  H03B3/02

CPC classification number: H03B5/1231 ,  H03B5/1203 ,  H03B5/1243 ,  H03B2200/004 ,  H03B2200/0048 ,  H03B2201/025 ,  H03B2201/031

Abstract: The proposed local oscillation circuit comprises a resonance circuit including a variable capacitance diode to change the resonance frequency and tuning coils for low and high frequency bands, an oscillating transistor connected with the resonance circuit, changeover means for switching the tuning coils between the low and the high frequency bands, biasing means for providing a bias voltage for the oscillating transistor, and means for changing over a collector current of the transistor by changing the bias voltage applied by the biasing means to the transistor, in response to the operation of the tuning coil change-over means. The local oscillation circuit is well adapted to be used in a tuner of a receiver which receives a wide range of frequencies, e.g. a VHF television tuner.

Abstract translation: 所提出的本地振荡电路包括谐振电路，其包括用于改变谐振频率的可变电容二极管和用于低频和高频带的调谐线圈，与谐振电路连接的振荡晶体管，用于将调谐线圈切换到低频和低频之间的转换装置 高频带，用于为振荡晶体管提供偏置电压的偏置装置，以及用于响应于调谐线圈的操作而改变由偏置装置施加到晶体管的偏置电压来改变晶体管的集电极电流的装置 转换手段 本地振荡电路非常适合用于接收宽范围频率的接收机的调谐器，例如， 甚高频电视调谐器。

公开(公告)号：US3638301A

公开(公告)日：1972-02-01

申请号：US3638301D

申请日：1970-06-29

Applicant: HITACHI LTD

Inventor： MATSUURA SHIGEO

IPC: H01L29/93 ,  B01J17/00 ,  H01L7/02

CPC classification number: H01L29/93 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/098 ,  Y10S148/145 ,  Y10S438/916

Abstract: A variable capacitance diode having an improved stepped junction therein formed by epitaxially depositing a P type layer on a N+ silicon substrate, forming an N+ type layer on the P type layer, heating the produced segment to a high temperature to cause the impurities contained in the N+ type layer and the N+ type substrate to diffuse into the P type layer, whereby the P type layer is converted to an N type layer, and thereafter forming a P+ type layer on the N+ type layer.

Abstract translation: 一种具有改进的台阶结的变容二极管，其通过在N +硅衬底上外延沉积P型层而形成，在P +型层上形成N +型层，将所生成的片段加热至高温至 导致N +型层和N +型衬底中所含的杂质扩散到P型层中，由此将P型层转变为N +型层，然后形成P +型 层在N +型层上。