公开(公告)号：US20200235211A1

公开(公告)日：2020-07-23

申请号：US16825914

申请日：2020-03-20

申请人： HRL Laboratories, LLC

发明人： Biqin HUANG ,  Xiwei Bai

IPC分类号： H01L29/16 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L21/82 ,  H01L21/04 ,  H01L21/266 ,  H01L21/265

摘要： A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.

公开(公告)号：US20190036023A1

公开(公告)日：2019-01-31

申请号：US16005529

申请日：2018-06-11

申请人： HRL LABORATORIES, LLC

发明人： Wei Yi ,  Kenneth K. Tsang ,  Stephen K. Lam ,  Xiwei Bai ,  Jack A. Crowell ,  Elias A. Flores

IPC分类号： H01L47/00 ,  H01L27/26

CPC分类号： H01L47/005 ,  H01L27/26 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L47/00

摘要： A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

公开(公告)号：US10600961B2

公开(公告)日：2020-03-24

申请号：US16005529

申请日：2018-06-11

申请人： HRL LABORATORIES, LLC

发明人： Wei Yi ,  Kenneth K. Tsang ,  Stephen K. Lam ,  Xiwei Bai ,  Jack A. Crowell ,  Elias A. Flores

IPC分类号： H01L47/00 ,  H01L27/26 ,  H01L45/00

摘要： A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

公开(公告)号：US20190237546A1

公开(公告)日：2019-08-01

申请号：US16198274

申请日：2018-11-21

申请人： HRL Laboratories, LLC

发明人： Biqin Huang ,  Xiwei Bai

IPC分类号： H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L21/04 ,  H01L21/02 ,  H01L21/82

CPC分类号： H01L29/1602 ,  H01L21/02376 ,  H01L21/02603 ,  H01L21/0415 ,  H01L21/8206 ,  H01L29/0646 ,  H01L29/0669 ,  H01L29/66015

摘要： A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.