公开(公告)号：US20180374546A1

公开(公告)日：2018-12-27

申请号：US16120780

申请日：2018-09-04

Applicant: HUAWEI TECHNOLOGIES CO.,LTD.

Inventor： Liang Shi ,  Yejia Di ,  Hsing Mean SHA ,  Yuangang Wang ,  Dongfang Shan

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10 ,  G06F11/10 ,  G11C29/52

Abstract: A flash memory controller refreshes memory blocks in a flash memory device by setting different refresh cycles for individual memory blocks in the flash memory device. The flash memory controller records a number of erase operations performed on each memory block of the flash memory device. Upon detecting that a bit error rate of a memory block is greater than a preset threshold, the flash memory controller determines a refresh cycle for the memory block based on recorded number of erase operations performed on the memory block, and then refreshes the memory block according to the refresh cycle.

公开(公告)号：US10796774B2

公开(公告)日：2020-10-06

申请号：US16120780

申请日：2018-09-04

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Liang Shi ,  Yejia Di ,  Hsing Mean Sha ,  Yuangang Wang ,  Dongfang Shan

IPC: G11C16/34 ,  G06F11/10 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C29/52 ,  G11C11/56 ,  H01L29/788

Abstract: A flash memory controller refreshes memory blocks in a flash memory device by setting different refresh cycles for individual memory blocks in the flash memory device. The flash memory controller records a number of erase operations performed on each memory block of the flash memory device. Upon detecting that a bit error rate of a memory block is greater than a preset threshold, the flash memory controller determines a refresh cycle for the memory block based on recorded number of erase operations performed on the memory block, and then refreshes the memory block according to the refresh cycle.