公开(公告)号：US10430096B2

公开(公告)日：2019-10-01

申请号：US15882683

申请日：2018-01-29

申请人： Huawei Technologies Co., Ltd. ,  Fudan University

发明人： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yinyin Lin

IPC分类号： G06F3/06 ,  G06F1/3234

摘要： A hybrid storage device includes a controller, a volatile storage unit, and a non-volatile storage unit. When the hybrid storage device is in a first working mode, the volatile storage unit is in an enabled state, and the non-volatile storage unit is in a disabled state; when the hybrid storage device is in a second working mode, the non-volatile storage unit is in an enabled state, and the volatile storage unit is in a disabled state. When the hybrid storage device runs in the first working mode, and when detecting that a running parameter of the computer meets a first switching condition, the controller enables the non-volatile storage unit, copies data in the volatile storage unit to the non-volatile storage unit, and switches the hybrid storage device to the second working mode.

公开(公告)号：US20170300419A1

公开(公告)日：2017-10-19

申请号：US15638582

申请日：2017-06-30

申请人： HUAWEI TECHNOLOGIES CO.,LTD. ,  Fudan University

发明人： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yuangang Wang ,  Yinyin Lin

IPC分类号： G06F12/08 ,  G11C11/406 ,  G06F12/10 ,  G06F12/02 ,  G06F11/14

CPC分类号： G06F12/0868 ,  G06F11/14 ,  G06F12/0246 ,  G06F12/0802 ,  G06F12/109 ,  G06F13/28 ,  G11C11/40615 ,  G11C11/40622 ,  Y02D10/13 ,  Y02D10/14 ,  Y02D10/151

摘要： A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.

公开(公告)号：US10223273B2

公开(公告)日：2019-03-05

申请号：US15638582

申请日：2017-06-30

申请人： HUAWEI TECHNOLOGIES CO., LTD. ,  Fudan University

发明人： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yuangang Wang ,  Yinyin Lin

IPC分类号： G06F12/02 ,  G06F12/0868 ,  G06F13/28 ,  G06F11/14 ,  G06F12/0802 ,  G06F12/109 ,  G11C11/406

摘要： A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.

公开(公告)号：US10976800B2

公开(公告)日：2021-04-13

申请号：US15882612

申请日：2018-01-29

申请人： Huawei Technologies Co., Ltd. ,  Fudan University

发明人： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Shihai Xiao ,  Yinyin Lin ,  Yi Wei

IPC分类号： G06F1/3287 ,  G06F3/06 ,  G06F1/3228 ,  G06F1/3234 ,  G06F9/4401 ,  G06F12/0868

摘要： An electronic device includes a processor, a volatile memory, and a non-volatile memory. The non-volatile memory stores a first operating system, and the electronic device works in a first working mode and a second working mode. When the electronic device is in the first working mode, a second operating system is run in the volatile memory. When the processor detects that the electronic device reaches a preset condition for entering the second working mode, the non-volatile memory is enabled, and non-system data in the volatile memory is moved to the non-volatile memory. The non-system data does not include the second operating system. After the movement of the non-system data is completed, the volatile memory is disabled, and the first operating system is run in the non-volatile memory, so that the electronic device enters the second working mode.