Hybrid storage device, computer, control device, and power consumption reduction method

    公开(公告)号:US10430096B2

    公开(公告)日:2019-10-01

    申请号:US15882683

    申请日:2018-01-29

    IPC分类号: G06F3/06 G06F1/3234

    摘要: A hybrid storage device includes a controller, a volatile storage unit, and a non-volatile storage unit. When the hybrid storage device is in a first working mode, the volatile storage unit is in an enabled state, and the non-volatile storage unit is in a disabled state; when the hybrid storage device is in a second working mode, the non-volatile storage unit is in an enabled state, and the volatile storage unit is in a disabled state. When the hybrid storage device runs in the first working mode, and when detecting that a running parameter of the computer meets a first switching condition, the controller enables the non-volatile storage unit, copies data in the volatile storage unit to the non-volatile storage unit, and switches the hybrid storage device to the second working mode.

    Memory access method, storage-class memory, and computer system

    公开(公告)号:US10223273B2

    公开(公告)日:2019-03-05

    申请号:US15638582

    申请日:2017-06-30

    摘要: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.

    Write Apparatus and Magnetic Memory
    7.
    发明申请
    Write Apparatus and Magnetic Memory 有权
    写装置和磁记忆

    公开(公告)号:US20170040046A1

    公开(公告)日:2017-02-09

    申请号:US15333235

    申请日:2016-10-25

    IPC分类号: G11C11/16

    摘要: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.

    摘要翻译: 写装置和磁存储器,其中写装置包括第一驱动端口,第二驱动端口,第一信息存储区域,第二信息存储区域和信息缓冲器。 第一区域位于第一信息存储区域和信息缓冲器之间。 第二区域位于第二信息存储区域和信息缓冲器之间。 第一信息存储区域,第二信息存储区域和信息缓冲器由第一磁性材料制成。 第一区域和第二区域由第二磁性材料制成。 第一磁性材料的磁能高于第二磁性材料的磁能。 写装置可以确保磁存储器的写入稳定性。

    STORAGE UNIT, MEMORY, AND METHOD FOR CONTROLLING STORAGE UNIT
    9.
    发明申请
    STORAGE UNIT, MEMORY, AND METHOD FOR CONTROLLING STORAGE UNIT 有权
    存储单元,存储器和用于控制存储单元的方法

    公开(公告)号:US20160231959A1

    公开(公告)日:2016-08-11

    申请号:US15133897

    申请日:2016-04-20

    IPC分类号: G06F3/06

    摘要: A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.

    摘要翻译: 存储单元包括U形磁迹,第一驱动电路,第二驱动电路,第一驱动端口和第二驱动端口。 U形磁道包括第一端口,第二端口,第一存储区域和第二存储区域。 通过控制第一端口,第二端口,第一驱动端口和第二驱动端口的输入电压并驱动第一驱动电路,在第一存储区域中产生电流脉冲,并且在第一存储器中产生磁畴壁 区域被驱动移动。 通过控制第一端口,第二端口,第一驱动端口和第二驱动端口的输入电压并驱动第二驱动电路,在第二存储区域中产生电流脉冲,并且在第二存储器中产生磁畴 区域被驱动移动。