摘要:
A printed transistor has a first gate (202) printed and disposed on a first side of a printed deposit of semiconductor material (201) and a second printed gate (301) disposed on an opposite side of the printed deposit of semiconductor material. By one approach these elements are provided using a serial printing process. By another approach these elements are provided through use of a lamination process.
摘要:
Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices.
摘要:
An object (201) (such as a containment mechanism) supports both a functional electrical circuit (203) and an electrical circuit (202) to which the functional electrical circuit is responsive. In a preferred approach the functional electrical circuit has both a low power state of operation and a higher power state of operation. Upon detecting (104) that an area of connectivity of the electrical circuit has been severed (via, for example, corresponding manipulation of the object itself), the functional electrical circuit responsively operates (106) using the higher power state of operation.
摘要:
A power source (201) and a printed transistor circuit (202) are combined with one another in a stacked and integral configuration. In a preferred though optional configuration this combination can further comprise a substrate (200) of choice. The power source can comprise a technology of choice such as, but not limited, to, a battery or a photovoltaic element. These elements can be combined (104) using a joining technology of choice such as, but not limited to, laminating these elements together or printing one upon the other.
摘要:
An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.
摘要:
A semiconductor device can be comprised of a substrate having a plurality of different printable semiconductor inks formed thereon. In a preferred approach at least some of these printable semiconductor inks comprise organic semiconductor material inks. These semiconductor inks can vary from one another with respect to various properties including but not limited to electrical characteristics and environmental efficacy.
摘要:
An organic semiconductor product state monitor attached to a product receives a product usefulness input, which, along with the product predetermined usefulness limit, is used to determine an indicator command to indicate a state of usefulness of the product. An organic circuit is formed and placed on a product with a power supply to control the circuit operation.
摘要:
An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.
摘要:
An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.
摘要:
An inverter circuit (500) having a drive transistor (102) that operably couples to a voltage bias input (101) (and where that drive transistor controls the inverter circuit output by opening and closing a connection between the output (105) and ground (104)) is further operably coupled to a feedback switch (401). In a preferred approach the feedback switch is itself also operably coupled to the voltage bias input and the output and preferably serves, when the drive transistor is switched “off,” to responsively couple the voltage bias input to the drive transistor in such a way as to cause a gate terminal of the drive transistor to have its polarity relative to a source terminal of the drive transistor reversed and hence permit the inverter circuit to operate across a substantially full potential operating range of the drive transistor.