公开(公告)号：US20140307997A1

公开(公告)日：2014-10-16

申请号：US13976913

申请日：2011-12-20

申请人： Hanan Bar ,  John Heck ,  Avi Feshali ,  Ran Feldesh

发明人： Hanan Bar ,  John Heck ,  Avi Feshali ,  Ran Feldesh

IPC分类号： G02B6/122 ,  H01L21/8252 ,  H01L29/205 ,  G02B6/13

CPC分类号： G02B6/1225 ,  G02B6/12004 ,  G02B6/13 ,  G02B2006/12061 ,  H01L21/28575 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/205

摘要： Photonic passivation layers, III-V semiconductor die with offcut edges, and NiGe contact metallization for silicon-based photonic integrated circuits (PICs). In embodiments, a non-sacrificial passivation layer is formed on a silicon photonic element, such as a waveguide for protection of the waveguide surfaces. In embodiments, a III-V semiconductor film is transferred from a III-V growth substrate that is singulated along streets that are misaligned from cleave planes to avoid crystallographic etch artifacts in a layer transfer process. In embodiments, a NiGe contact metallization is employed for both p-type and n-type contacts on a device formed in the transferred III-V semiconductor layer to provide low specific contact resistance and compatibility with MOS processes.

摘要翻译： 光子钝化层，具有切割边缘的III-V半导体管芯和用于硅基光子集成电路（PIC）的NiGe接触金属化。 在实施例中，在硅光子元件（例如用于保护波导表面的波导）上形成非牺牲钝化层。 在实施例中，III-V半导体膜从沿切割面不对准的街道上被切割的III-V生长衬底转移，以避免层转移过程中的晶体学蚀刻伪影。 在实施例中，NiGe接触金属化用于形成在转移的III-V半导体层中的器件上的p型和n型触点，以提供低的比接触电阻和与MOS工艺的兼容性。

公开(公告)号：US08620164B2

公开(公告)日：2013-12-31

申请号：US13010232

申请日：2011-01-20

申请人： John Heck ,  Hanan Bar ,  Richard Jones ,  Hyundai Park

发明人： John Heck ,  Hanan Bar ,  Richard Jones ,  Hyundai Park

IPC分类号： H04B10/00

CPC分类号： H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2205

摘要： Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

摘要翻译： 本文描述的是混合III-V硅激光器，其包括第一半导体区域，其包括来自III族，IV族或V族半导体的半导体材料的层，以形成有源区; 以及第二半导体区域，具有硅波导，并且通过在第一半导体区域的层的室温下直接接合而与第一半导体区域接合。

公开(公告)号：US07283024B2

公开(公告)日：2007-10-16

申请号：US10740649

申请日：2003-12-18

申请人： Hanan Bar ,  John Heck

发明人： Hanan Bar ,  John Heck

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2059/0072

摘要： In a Micro Electro-Mechanical System (MEMS) switch, a common switch failure is a short between the upper and the lower electrostatic actuation plates. Such shorts may occur due to torque deformation. Stopper bumps having a slightly lower height profile than that of the contact bumps are provided to prevent such shorts. The stopper bumps may be made using the same mask as that used to create the contact bump with the height of the respective bumps controlled by determining the diameter of the bumps.

摘要翻译： 在微机电系统（MEMS）开关中，常见的开关故障是上下静电驱动板之间的短路。 这种短路可能由于扭矩变形而发生。 提供具有比接触凸块略高的高度轮廓的止动凸块以防止这种短路。 可以使用与用于产生接触凸块相同的掩模制造止动凸块，通过确定凸块的直径来控制各凸起的高度。

公开(公告)号：US20060290443A1

公开(公告)日：2006-12-28

申请号：US11165795

申请日：2005-06-23

申请人： Tsung-Kuan Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

发明人： Tsung-Kuan Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

IPC分类号： H01P1/10

CPC分类号： H01H59/0009 ,  B81B3/0013 ,  B81B2201/014 ,  H01H2059/0063 ,  H01H2059/0072

摘要： An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

摘要翻译： 机电开关包括致动电极，锚，悬臂电极，触点和信号线。 致动电极和锚固件安装到基板上。 悬臂电极由致动电极上方的锚固件支撑。 触点安装到悬臂电极。 当在致动电极和悬臂电极之间施加致动电压时，信号线被定位成与触点形成闭合电路，导致悬臂电极以拉链的方式朝着致动电极弯曲，从悬臂的远端开始 电极。

公开(公告)号：US20120189317A1

公开(公告)日：2012-07-26

申请号：US13010232

申请日：2011-01-20

申请人： John Heck ,  Hanan Bar ,  Richard Jones ,  Hyundai Park

发明人： John Heck ,  Hanan Bar ,  Richard Jones ,  Hyundai Park

IPC分类号： H01S5/323 ,  H04B10/12 ,  H01S5/343

CPC分类号： H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2205

摘要： Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

摘要翻译： 本文描述的是混合III-V硅激光器，其包括第一半导体区域，其包括来自III族，IV族或V族半导体的半导体材料的层，以形成有源区; 以及第二半导体区域，具有硅波导，并且通过在第一半导体区域的层的室温下直接接合而与第一半导体区域接合。

公开(公告)号：US07321275B2

公开(公告)日：2008-01-22

申请号：US11165795

申请日：2005-06-23

申请人： Tsung-Kuan Allen Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

发明人： Tsung-Kuan Allen Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

IPC分类号： H01P1/10

CPC分类号： H01H59/0009 ,  B81B3/0013 ,  B81B2201/014 ,  H01H2059/0063 ,  H01H2059/0072

摘要： An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

摘要翻译： 机电开关包括致动电极，锚，悬臂电极，触点和信号线。 致动电极和锚固件安装到基板上。 悬臂电极由致动电极上方的锚固件支撑。 触点安装到悬臂电极。 当在致动电极和悬臂电极之间施加致动电压时，信号线被定位成与触点形成闭合电路，导致悬臂电极以拉链的方式朝着致动电极弯曲，从悬臂的远端开始 电极。

公开(公告)号：US20050134413A1

公开(公告)日：2005-06-23

申请号：US10740649

申请日：2003-12-18

申请人： Hanan Bar ,  John Heck

发明人： Hanan Bar ,  John Heck

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2059/0072

摘要： In a Micro Electro-Mechanical System (MEMS) switch, a common switch failure is a short between the upper and the lower electrostatic actuation plates. Such shorts may occur due to torque deformation. Stopper bumps having a slightly lower height profile than that of the contact bumps are provided to prevent such shorts. The stopper bumps may be made using the same mask as that used to create the contact bump with the height of the respective bumps controlled by determining the diameter of the bumps.

摘要翻译： 在微机电系统（MEMS）开关中，常见的开关故障是上下静电驱动板之间的短路。 这种短路可能由于扭矩变形而发生。 提供具有比接触凸块略高的高度轮廓的止动凸块以防止这种短路。 可以使用与用于产生接触凸块相同的掩模制造止动凸块，通过确定凸块的直径来控制各凸起的高度。

公开(公告)号：US20210119710A1

公开(公告)日：2021-04-22

申请号：US17133360

申请日：2020-12-23

申请人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

发明人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

IPC分类号： H04B10/61

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

公开(公告)号：US09791641B2

公开(公告)日：2017-10-17

申请号：US14884430

申请日：2015-10-15

申请人： John Heck ,  Haisheng Rong

发明人： John Heck ,  Haisheng Rong

IPC分类号： G02B6/12 ,  H01L21/00 ,  G02B6/26 ,  H01L21/306 ,  G02B6/42 ,  G02B6/122 ,  G02B6/136

CPC分类号： G02B6/4214 ,  G02B6/122 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B6/4208 ,  G02B2006/12104 ,  H01L21/30604

摘要： Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.

公开(公告)号：US08681596B2

公开(公告)日：2014-03-25

申请号：US12961848

申请日：2010-12-07

申请人： John Heck

发明人： John Heck

IPC分类号： G11B9/00 ,  H01L21/331 ,  H01L31/036

CPC分类号： G11B9/1409 ,  G01Q80/00 ,  Y10T29/49147 ,  Y10T29/49222

摘要： Embodiments of a process comprising forming one or more micro-electro-mechanical (MEMS) probe on a conductive metal oxide semiconductor (CMOS) wafer, wherein each MEMS probe comprises a cantilever beam with a fixed end and a free end and wherein the CMOS wafer has circuitry thereon; forming an unsharpened tip at or near the free end of each cantilever beam; depositing a silicide-forming material over the tip; annealing the wafer to sharpen the tip; and exposing the sharpened tip. Embodiments of an apparatus comprising a conductive metal oxide semiconductor (CMOS) wafer including circuitry therein; one or more micro-electro-mechanical (MEMS) probes integrally formed on the CMOS wafer, wherein each MEMS probe comprises a cantilever beam with a fixed end and a free end and a sharpened tip at or near the free end, the sharpened tip formed by a process comprising forming an unsharpened tip at or near the free end of each cantilever beam, depositing a silicide-forming material over the unsharpened tip, annealing the wafer to sharpen the unsharpened tip, and exposing the sharpened tip.

摘要翻译： 一种方法的实施例包括在导电金属氧化物半导体（CMOS）晶片上形成一个或多个微电机械（MEMS）探针，其中每个MEMS探针包括具有固定端和自由端的悬臂梁，并且其中所述CMOS晶片 在其上有电路; 在每个悬臂梁的自由端处或附近形成未钝化的尖端; 在尖端上沉积硅化物形成材料; 退火晶片以锐化尖端; 并暴露锋利的尖端。 包括其中包括电路的导电金属氧化物半导体（CMOS）晶片的装置的实施例; 在CMOS晶片上整体形成的一个或多个微机电（MEMS）探针，其中每个MEMS探针包括具有固定端和自由端的悬臂梁，以及在自由端处或附近的尖锐尖端，形成尖锐的尖端 通过包括在每个悬臂梁的自由端处或附近形成未钝化的尖端的方法，在未钝化的尖端上沉积硅化物形成材料，退火晶片以锐化未钝化的尖端，以及暴露尖锐的尖端。