公开(公告)号：US4367655A

公开(公告)日：1983-01-11

申请号：US169656

申请日：1980-07-17

申请人： Hans Bluml ,  Gerhard Schmidt

发明人： Hans Bluml ,  Gerhard Schmidt

IPC分类号： B29C45/76 ,  G01L5/00

CPC分类号： G01L5/0076 ,  B29C45/7653

摘要： A method and an apparatus for measuring the closing and holding force on the moulding die or tool (6, 7) of a pressure diecasting or injection moulding machine of which the closing device comprises a toggle lever mechanism. Measurement of the closing and holding force takes place by way of measuring a deformation of that end plate (4) on which the bars (1) and the toggle lever mechanism (10) are supported. The bars (1) and the toggle lever mechanism (10) transmit to the end plate (4) forces which produce a bending moment. The bending moment leads to a comparatively large deformation which is therefore readily measured by a measuring device (14, 24) associated with the end plate. By arranging the measuring device (14, 24) at the end plate (4), one also avoids damage to the measuring device (14, 24) by the movable parts of the closing device and access to the pressure diecasting or injection moulding machine by the operator is not impeded (FIG. 1).

摘要翻译： 一种用于测量压力压铸或注射成型机的成型模具或工具（6,7）上的闭合和保持力的方法和装置，闭合装置包括肘杆机构。 通过测量支撑杆（1）和肘杆机构（10）的端板（4）的变形来进行关闭和保持力的测量。 杆（1）和肘杆机构（10）向端板（4）传递产生弯矩的力。 弯矩导致相当大的变形，因此容易地通过与端板相关联的测量装置（14,24）来测量。 通过将测量装置（14,24）布置在端板（4）处，还可以通过关闭装置的可移动部件避免对测量装置（14,24）的损坏，并且通过压力压铸或注射成型机 操作者不受阻碍（图1）。

公开(公告)号：US09076455B2

公开(公告)日：2015-07-07

申请号：US13591667

申请日：2012-08-22

申请人： Mohamed Krini ,  Gerhard Schmidt ,  Bernd Iser ,  Arthur Wolf

发明人： Mohamed Krini ,  Gerhard Schmidt ,  Bernd Iser ,  Arthur Wolf

IPC分类号： G10L21/0208 ,  G10K11/00 ,  G10L21/02 ,  G10L19/02

CPC分类号： G10L21/0208 ,  G10K11/002 ,  G10L19/0204 ,  G10L21/02 ,  G10L2021/02082

摘要： Embodiments of the present invention exploit redundancy of succeeding FFT spectra and use this redundancy for computing interpolated temporal supporting points. An analysis filter bank converts overlapped sequences of an audio (ex. loudspeaker) signal from a time domain to a frequency domain to obtain a time series of short-time loudspeaker spectra. An interpolator temporally interpolates this time series. The interpolation is fed to an echo canceller, which computes an estimated echo spectrum. A microphone analysis filter bank converts overlapped sequences of an audio microphone signal from the time domain to the frequency domain to obtain a time series of short-time microphone spectra. The estimated echo spectrum is subtracted from the microphone spectrum. Further signal enhancement (filtration) may be applied. A synthesis filter bank converts the filtered microphone spectra to the time domain to generate an echo compensated audio microphone signal. Computational complexity of signal processing systems can, therefore, be reduced.

公开(公告)号：US09026435B2

公开(公告)日：2015-05-05

申请号：US12772562

申请日：2010-05-03

申请人： Mohamed Krini ,  Gerhard Schmidt

发明人： Mohamed Krini ,  Gerhard Schmidt

IPC分类号： G10L19/09 ,  G10L25/90 ,  G10L21/0216

CPC分类号： G10L25/90 ,  G10L2021/02168

摘要： The invention provides a method for estimating a fundamental frequency of a speech signal comprising the steps of receiving a signal spectrum of the speech signal, filtering the signal spectrum to obtain a refined signal spectrum, determining a cross-power spectral density using the refined signal spectrum and the signal spectrum, transforming the cross-power spectral density into the time domain to obtain a cross-correlation function, and estimating the fundamental frequency of the speech signal based on the cross-correlation function.

摘要翻译： 本发明提供了一种用于估计语音信号的基频的方法，包括以下步骤：接收语音信号的信号频谱，滤波信号频谱以获得精细的信号频谱，使用精细的信号频谱确定交叉功率频谱密度 和信号频谱，将交叉功率谱密度变换成时域以获得互相关函数，并且基于互相关函数估计语音信号的基频。

公开(公告)号：US08787560B2

公开(公告)日：2014-07-22

申请号：US12708172

申请日：2010-02-18

申请人： Markus Buck ,  Gerhard Schmidt ,  Tobias Wolff

发明人： Markus Buck ,  Gerhard Schmidt ,  Tobias Wolff

IPC分类号： H04M9/08 ,  G01S15/00 ,  H04R3/00

CPC分类号： H04R3/002 ,  G10L2021/02082 ,  H04M9/082 ,  H04R1/406 ,  H04R3/005 ,  H04R2430/20

摘要： The invention provides a method for determining a set of filter coefficients for an acoustic echo compensator in a beamformer arrangement. The acoustic echo compensator compensates for echoes within the beamformed signal. A plurality of sets of filter coefficients for the acoustic echo compensator is provided. Each set of filter coefficients corresponds to one of a predetermined number of steering directions of the beamformer arrangement. The predetermined number of steering directions is equal to or greater than the number of microphones in the microphone array. For a current steering direction, a current set of filter coefficients for the acoustic echo compensator is determined based on the provided sets of filter coefficients.

摘要翻译： 本发明提供一种用于确定波束形成器布置中的声学回波补偿器的滤波器系数集合的方法。 声回波补偿器补偿波束形成信号内的回波。 提供了用于声学回声补偿器的多组滤波器系数。 每组滤波器系数对应于波束形成器装置的预定数量的转向方向之一。 预定数量的转向方向等于或大于麦克风阵列中的麦克风的数量。 对于当前的转向方向，基于所提供的滤波器系数集合来确定用于声学回声补偿器的当前一组滤波器系数。

公开(公告)号：US08735981B2

公开(公告)日：2014-05-27

申请号：US12486471

申请日：2009-06-17

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/66

CPC分类号： H01L29/802 ,  H01L29/0696 ,  H01L29/408 ,  H01L29/432 ,  H01L29/66431 ,  H01L29/739

摘要： Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.

摘要翻译： 公开了一种具有控制结构的晶体管组件，其具有沿着沟道区沿电流流动方向延伸的非晶半导体绝缘材料的沟道控制层。

公开(公告)号：US20120174818A1

公开(公告)日：2012-07-12

申请号：US13496731

申请日：2010-09-16

申请人： Udo Bremkamp ,  Gerhard Schmidt

发明人： Udo Bremkamp ,  Gerhard Schmidt

IPC分类号： B61D17/00

CPC分类号： B61D17/06

摘要： A railway vehicle has a cover for a front coupling of the railway vehicle. The cover is formed of at least one displaceable front hatch that can be displaced by a drive between an opened and a closed end position. A displacement of the at least one front hatch is guided such that the displacement takes place along a circular segment path about a rotary axis.

摘要翻译： 铁路车辆具有用于铁路车辆的前联接器的盖。 所述盖由至少一个可移位的前舱口形成，所述至少一个可移动的前舱口可以由打开位置和闭合端位置之间的驱动器移位。 引导至少一个前舱口的位移，使得沿着围绕旋转轴线的圆形段路径发生位移。

公开(公告)号：US08093676B2

公开(公告)日：2012-01-10

申请号：US12166531

申请日：2008-07-02

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L23/58

CPC分类号： H01L21/26586 ,  H01L23/3178 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/41766 ,  H01L29/66136 ,  H01L29/6634 ,  H01L29/66727 ,  H01L29/7396 ,  H01L29/7811 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A first semiconductor zone of a first conduction type is arranged in the inner region and in the edge region. A second semiconductor zone of a second conduction type is arranged in the inner region and adjacent to the first semiconductor zone. A trench is arranged in the edge region and has first and second sidewalls and a bottom, and extends into the semiconductor body. A doped first sidewall zone of the second conduction type is adjacent to the first sidewall of the trench. A doped second sidewall zone of the second conduction type is adjacent to the second sidewall of the trench. A doped bottom zone of the second conduction type is adjacent to the bottom of the trench. Doping concentrations of the sidewall zones are lower than a doping concentration of the bottom zone.

摘要翻译： 半导体部件包括半导体本体，其具有第一侧，第二侧，在横向方向上限定半导体本体的边缘，内部区域和边缘区域。 第一导电类型的第一半导体区域布置在内部区域和边缘区域中。 第二导电类型的第二半导体区域布置在内部区域中且与第一半导体区域相邻。 沟槽设置在边缘区域中并且具有第一和第二侧壁和底部，并延伸到半导体本体中。 第二导电类型的掺杂的第一侧壁区域与沟槽的第一侧壁相邻。 第二导电类型的掺杂第二侧壁区域与沟槽的第二侧壁相邻。 第二导电类型的掺杂底部区域与沟槽的底部相邻。 侧壁区域的掺杂浓度低于底部区域的掺杂浓度。

公开(公告)号：US08013340B2

公开(公告)日：2011-09-06

申请号：US12242101

申请日：2008-09-30

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/04

CPC分类号： H01L29/7813 ,  H01L23/3171 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/7397 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor body with a front-sided surface. An active cell region with a semiconductor device structure and an edge region surrounding the active cell region are arranged in the semiconductor body. The front-sided surface of the semiconductor body includes a passivation layer over the edge region and over the active cell region. The passivation layer includes a semiconducting insulation layer of a semiconducting material, the bandgap of which is greater than the bandgap of the material of the semiconductor body.

摘要翻译： 半导体器件包括具有前表面的半导体本体。 具有半导体器件结构的活性单元区域和围绕有源单元区域的边缘区域布置在半导体本体中。 半导体主体的前侧表面包括边缘区域上方和活性电池区域上方的钝化层。 钝化层包括半导体材料的半导体绝缘层，其带隙大于半导体本体材料的带隙。

公开(公告)号：US20110019835A1

公开(公告)日：2011-01-27

申请号：US12742907

申请日：2008-11-17

申请人： Gerhard Schmidt ,  Tobias Wolff ,  Markus Buck ,  Olga González Valbuena ,  Günther Wirsching

发明人： Gerhard Schmidt ,  Tobias Wolff ,  Markus Buck ,  Olga González Valbuena ,  Günther Wirsching

IPC分类号： G10K11/16 ,  H04R3/00

CPC分类号： H04R29/00 ,  G10L21/0272 ,  G10L2021/02166 ,  H04R3/005

摘要： The present invention relates to a method for localizing a sound source, in particular, a human speaker, comprising detecting sound generated by the sound source by means of a microphone array comprising more than two microphones and obtaining microphone signals, one for each of the microphones, selecting from the microphone signals a pair of microphone signals for a predetermined frequency range based on the distance of the microphones to each other and estimating the angle of the incidence of the sound on the microphone array based on the selected pair of microphone signals.

摘要翻译： 本发明涉及一种用于定位声源，特别是人类扬声器的方法，包括通过包括两个以上麦克风的麦克风阵列检测声源产生的声音并获得麦克风信号，每个麦克风 基于麦克风彼此的距离，基于所选择的一对麦克风信号估计麦克风阵列上的声音的入射角度，从麦克风选择一个麦克风信号达到预定频率范围。

公开(公告)号：US20100320536A1

公开(公告)日：2010-12-23

申请号：US12486471

申请日：2009-06-17

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/78

CPC分类号： H01L29/802 ,  H01L29/0696 ,  H01L29/408 ,  H01L29/432 ,  H01L29/66431 ,  H01L29/739

摘要： Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.

摘要翻译： 公开了一种具有控制结构的晶体管组件，其具有沿着沟道区沿电流流动方向延伸的非晶半导体绝缘材料的沟道控制层。