Interlocked synchronous pipeline clock gating
    3.
    发明申请
    Interlocked synchronous pipeline clock gating 有权
    联锁同步管道时钟门控

    公开(公告)号:US20060161795A1

    公开(公告)日:2006-07-20

    申请号:US11375989

    申请日:2006-03-14

    IPC分类号: G06F1/26

    摘要: An integrated circuit including a pipeline and a method of operating the pipeline. Each stage of the pipeline is triggered by one or more triggering events and are individually, and selectively, stalled by a stall signal. For each stage a stall signal, delayed with respect to the stall signal of a downstream stage, is generated and used to select whether the pipeline stage in question is triggered. A data valid signal propagating with valid data adds further selection, such that only stages with valid data are stalled.

    摘要翻译: 一种包括管道的集成电路和操作管道的方法。 流水线的每个阶段由一个或多个触发事件触发,并且由失速信号单独且有选择地停止。 对于每个阶段,产生相对于下游级的失速信号延迟的失速信号,并用于选择是否触发所讨论的流水线级。 用有效数据传播的数据有效信号增加了进一步的选择,使得仅有有效数据的阶段停滞。

    DRAM hierarchical data path
    4.
    发明申请
    DRAM hierarchical data path 有权
    DRAM分层数据路径

    公开(公告)号:US20060233024A1

    公开(公告)日:2006-10-19

    申请号:US11108369

    申请日:2005-04-18

    IPC分类号: G11C7/10

    摘要: A hierarchical DRAM array, DRAM macro and logic chip including the DRAM macro embedded in the logic. DRAM array columns are segmented with a small number (e.g., 2-64) of cells connected to a local bit line (LBL) in each segment. Each LBL drives a sense device that drives a global read bit line (GRBL). When a cell storing a high is selected, the cell drives the LBL high, which turns the sense device on to drive the GRBL low. Segments may be used individually (as a macro) or combined with other segments sharing a common GRBL.

    摘要翻译: 分层DRAM阵列,DRAM宏和逻辑芯片,其中包含嵌入逻辑的DRAM宏。 DRAM阵列列以与每个段中的局部位线(LBL)连接的小数目(例如,2-64)分段。 每个LBL驱动驱动全局读取位线(GRBL)的检测器件。 当选择存储高电平的单元时,单元驱动LBL为高电平,使开启感测器件以驱动GRBL为低电平。 分段可以单独使用(作为宏)或与共享共同GRBL的其他段组合使用。

    DRAM HIERARCHICAL DATA PATH
    5.
    发明申请
    DRAM HIERARCHICAL DATA PATH 审中-公开
    DRAM分层数据路径

    公开(公告)号:US20080016277A1

    公开(公告)日:2008-01-17

    申请号:US11775717

    申请日:2007-07-10

    IPC分类号: G06F12/00

    摘要: A hierarchical DRAM array, DRAM macro and logic chip including the DRAM macro embedded in the logic. DRAM array columns are segmented with a small number (e.g., 2-64) of cells connected to a local bit line (LBL) in each segment. Each LBL drives a sense device that drives a global read bit line (GRBL). When a cell storing a high is selected, the cell drives the LBL high, which turns the sense device on to drive the GRBL low. Segments may be used individually (as a macro) or combined with other segments sharing a common GRBL.

    摘要翻译: 分层DRAM阵列,DRAM宏和逻辑芯片,其中包含嵌入逻辑的DRAM宏。 DRAM阵列列以与每个段中的局部位线(LBL)连接的小数目(例如,2-64)分段。 每个LBL驱动驱动全局读取位线(GRBL)的检测器件。 当选择存储高电平的单元时,单元驱动LBL为高电平,使开启感测器件以驱动GRBL为低电平。 分段可以单独使用(作为宏)或与共享共同GRBL的其他段组合使用。