摘要:
Leakage current control devices include a circuit having one or more functions in a data path where the functions are executed in a sequence. Each of the functions has power reduction logic to energize each respective function. A leakage control circuit interacts with the power reduction logic, so that the functions are energized or deenergized in a control sequence such that the functions where the data is resident are energized and at least one of the other functions is not energized.
摘要:
A multithreaded processor, fetch control for a multithreaded processor and a method of fetching in the multithreaded processor. Processor event and use (EU) signs are monitored for downstream pipeline conditions indicating pipeline execution thread states. Instruction cache fetches are skipped for any thread that is incapable of receiving fetched cache contents, e.g., because the thread is full or stalled. Also, consecutive fetches may be selected for the same thread, e.g., on a branch mis-predict. Thus, the processor avoids wasting power on unnecessary or place keeper fetches.
摘要:
A design structure for a 3D chip having at least one I/O layer connected to other 3D chip layers by a vertical bus such that the I/O layer(s) may accommodate protection and off-chip device drive circuits, customization circuits, translation circuits, conversions circuits and/or built-in self-test circuits capable of comprehensive chip or wafer level testing wherein the I/O layers function as a testhead. Substitution of I/O circuits or structures may be performed using E-fuses or the like responsive to such testing.
摘要:
A design structure for a 3D chip having at least one I/O layer connected to other 3D chip layers by a vertical bus such that the I/O layer(s) may accommodate protection and off-chip device drive circuits, customization circuits, translation circuits, conversions circuits and/or built-in self-test circuits capable of comprehensive chip or wafer level testing wherein the I/O layers function as a testhead. Substitution of I/O circuits or structures may be performed using E-fuses or the like responsive to such testing.
摘要:
A memory storage structure includes a memory storage device, and a first meta-structure having a first size and operating at a first speed. The first speed is faster than a second speed for storing meta-information based on information stored in a memory. A second meta-structure is hierarchically associated with the first meta-structure. The second meta-structure has a second size larger than the first size and operates at the second speed such that faster and more accurate prefetching is provided by coaction of the first and second meta-structures. A method is provided to assemble the meta-information in the first meta-structure and copy this information to the second meta-structure, and prefetching the stored information from the second meta-structure to the first meta-structure ahead of its use.
摘要:
A 3D chip having at least one I/O layer connected to other 3D chip layers by a vertical bus such that the I/O layer(s) may accommodate protection and off-chip device drive circuits, customization circuits, translation circuits, conversions circuits and/or built-in self-test circuits capable of comprehensive chip or wafer level testing wherein the I/O layers function as a testhead. Substitution of I/O circuits or structures may be performed using E-fuses or the like responsive to such testing.
摘要:
A 3D chip having at least one I/O layer connected to other 3D chip layers by a vertical bus such that the I/O layer(s) may accommodate protection and off-chip device drive circuits, customization circuits, translation circuits, conversions circuits and/or built-in self-test circuits capable of comprehensive chip or wafer level testing wherein the I/O layers function as a testhead. Substitution of I/O circuits or structures may be performed using E-fuses or the like responsive to such testing.
摘要:
A design structure comprising an integrated circuit architecture, circuit structure, and/or instructions for fabrication thereof. The circuit structure includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.
摘要:
An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.
摘要:
A memory system and method includes a cache having a filtered portion and an unfiltered portion. The filtered portion is divided into block sized components, and the unfiltered portion is divided into sub-block sized components. Blocks evicted from the filtered portion have selected sub-blocks thereof cached in the unfiltered portion for servicing requests.