CONTEXT LOOK AHEAD STORAGE STRUCTURES
    5.
    发明申请
    CONTEXT LOOK AHEAD STORAGE STRUCTURES 失效
    上下文前景存储结构

    公开(公告)号:US20080046703A1

    公开(公告)日:2008-02-21

    申请号:US11923902

    申请日:2007-10-25

    IPC分类号: G06F9/00

    CPC分类号: G06F9/3806

    摘要: A memory storage structure includes a memory storage device, and a first meta-structure having a first size and operating at a first speed. The first speed is faster than a second speed for storing meta-information based on information stored in a memory. A second meta-structure is hierarchically associated with the first meta-structure. The second meta-structure has a second size larger than the first size and operates at the second speed such that faster and more accurate prefetching is provided by coaction of the first and second meta-structures. A method is provided to assemble the meta-information in the first meta-structure and copy this information to the second meta-structure, and prefetching the stored information from the second meta-structure to the first meta-structure ahead of its use.

    摘要翻译: 存储器存储结构包括存储器存储设备和具有第一大小并以第一速度操作的第一元结构。 基于存储在存储器中的信息,第一速度比用于存储元信息的第二速度快。 第二个元结构与第一个元结构分层关联。 第二元结构具有大于第一尺寸的第二尺寸并且以第二速度操作,使得通过第一和第二元结构的共同作用来提供更快更准确的预取。 提供了一种用于在第一元结构中组装元信息并将该信息复制到第二元结构的方法,并且将其从第二元结构预取存储到其使用之前的第一元结构。

    STRUCTURE COMPRISING 3-DIMENSIONAL INTEGRATED CIRCUIT ARCHITECTURE, CIRCUIT STRUCTURE, AND INSTRUCTIONS FOR FABRICATION THEREOF
    8.
    发明申请
    STRUCTURE COMPRISING 3-DIMENSIONAL INTEGRATED CIRCUIT ARCHITECTURE, CIRCUIT STRUCTURE, AND INSTRUCTIONS FOR FABRICATION THEREOF 有权
    包含三维集成电路结构的结构,电路结构及其制造说明

    公开(公告)号:US20070283298A1

    公开(公告)日:2007-12-06

    申请号:US11768210

    申请日:2007-06-26

    IPC分类号: G06F17/50

    摘要: A design structure comprising an integrated circuit architecture, circuit structure, and/or instructions for fabrication thereof. The circuit structure includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.

    摘要翻译: 一种包括集成电路架构,电路结构和/或其制造指令的设计结构。 电路结构包括至少一个逻辑器件层和至少两个另外的分离的存储器阵列层。 对于设置在其中的特定类型的逻辑设备或存储器件,逻辑器件层和至少两个存储器阵列层中的每一个被独立地优化。 优选地还设置在逻辑器件层内的是阵列读出放大器,存储器阵列输出驱动器和类似的高性能电路,否则通常设置在存储器阵列层衬底内。 所有层可以独立供电以提供额外的性能增强。