Imaging optics and projection exposure installation for microlithography with an imaging optics
    3.
    发明授权
    Imaging optics and projection exposure installation for microlithography with an imaging optics 有权
    用于具有成像光学元件的微光刻的成像光学和投影曝光安装

    公开(公告)号:US09057964B2

    公开(公告)日:2015-06-16

    申请号:US13236873

    申请日:2011-09-20

    IPC分类号: G02B17/06 G03F7/20 G02B17/08

    摘要: Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

    摘要翻译: 成像光学器件包括在物场之后的成像光束路径中的第一反射镜,在图像场之前的成像光束路径中的最后一个反射镜,以及在图像场之前的成像光束路径中的第四个至最后一个镜像。 在物平面和图像平面之间的展开成像光束路径中,多个反射镜中的每一个的使用区域上的主光线的冲击点具有与图像平面相反的反射镜间隔。 第一个镜子的镜子间距大于最后一个镜子的反射镜间距。 第四到最后一个镜子的镜子间距大于第一个镜子的镜子间距。 从与物体间隔开的物体点发出的主光线具有相互发散的光束路线,给入射光瞳的负后焦距。

    IMAGING OPTICS AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICS
    4.
    发明申请
    IMAGING OPTICS AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICS 有权
    成像光学和投影曝光安装用于成像光学的微观算法

    公开(公告)号:US20120069315A1

    公开(公告)日:2012-03-22

    申请号:US13236873

    申请日:2011-09-20

    IPC分类号: G03F7/20 G03B27/70 G02B17/06

    摘要: Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

    摘要翻译: 成像光学器件包括在物场之后的成像光束路径中的第一反射镜,在图像场之前的成像光束路径中的最后一个反射镜,以及在图像场之前的成像光束路径中的第四个至最后一个镜像。 在物平面和图像平面之间的展开成像光束路径中,多个反射镜中的每一个的使用区域上的主光线的冲击点具有与图像平面相反的反射镜间隔。 第一个镜子的镜子间距大于最后一个镜子的反射镜间距。 第四到最后一个镜子的镜子间距大于第一个镜子的镜子间距。 从与物体间隔开的物体点发出的主光线具有相互发散的光束路线,给入射光瞳的负后焦距。

    Symmetrical objective having four lens groups for microlithography
    6.
    发明授权
    Symmetrical objective having four lens groups for microlithography 有权
    具有用于微光刻的四个透镜组的对称物镜

    公开(公告)号:US07697211B2

    公开(公告)日:2010-04-13

    申请号:US12257156

    申请日:2008-10-23

    IPC分类号: G02B27/30

    摘要: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

    摘要翻译: 本发明的特征在于一种用于微光刻的系统,其包括配置成在多个汞发射线处发射辐射的水银光源,设置成接收由水银光源发射的辐射的投影物镜,以及被配置为相对于投影物镜定位晶片的台 。 在操作期间,投影物镜将来自光源的辐射引导到晶片,其中晶片处的辐射包括来自多于一个发射线的能量。 用于所述投影物镜的光学透镜系统包括四个透镜组,每个透镜组具有包括二氧化硅的两个透镜,另一方面,第一和第二透镜组以及第三透镜组和第四透镜组相对于垂直的平面对称地定位 到所述透镜系统的光轴。

    Projection objective for microlithography
    7.
    发明授权
    Projection objective for microlithography 有权
    微光刻的投影目标

    公开(公告)号:US08629972B2

    公开(公告)日:2014-01-14

    申请号:US12884670

    申请日:2010-09-17

    摘要: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

    摘要翻译: 用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。 投影物镜包括至少六个反射镜,其中至少一个反射镜具有自由形反射表面。 投影物镜的总长(T)与物体像偏移(dOIS)之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。 投影物镜可以具有多个反射镜,其中总长度(T)和物体图像偏移(dOIS)之间的比率小于2。

    SYMMETRICAL OBJECTIVE HAVING FOUR LENS GROUPS FOR MICROLITHOGRAPHY
    8.
    发明申请
    SYMMETRICAL OBJECTIVE HAVING FOUR LENS GROUPS FOR MICROLITHOGRAPHY 有权
    具有四个用于微结构的镜片组的对称目标

    公开(公告)号:US20090080086A1

    公开(公告)日:2009-03-26

    申请号:US12257156

    申请日:2008-10-23

    IPC分类号: G02B27/18 G02B11/28 G02B11/04

    摘要: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

    摘要翻译: 本发明的特征在于一种用于微光刻的系统,其包括配置成在多个汞发射线处发射辐射的水银光源,设置成接收由水银光源发射的辐射的投影物镜,以及被配置为相对于投影物镜定位晶片的台 。 在操作期间,投影物镜将来自光源的辐射引导到晶片,其中晶片处的辐射包括来自多于一个发射线的能量。 用于所述投影物镜的光学透镜系统包括四个透镜组,每个透镜组具有包括二氧化硅的两个透镜,另一方面,第一和第二透镜组以及第三透镜组和第四透镜组相对于垂直的平面对称地定位 到所述透镜系统的光轴。

    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY
    9.
    发明申请
    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY 有权
    投影目标的微观算法

    公开(公告)号:US20110026003A1

    公开(公告)日:2011-02-03

    申请号:US12884670

    申请日:2010-09-17

    IPC分类号: G03B27/72

    摘要: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

    摘要翻译: 用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。 投影物镜包括至少六个反射镜,其中至少一个反射镜具有自由形反射表面。 投影物镜的总长(T)与物体像偏移(dOIS)之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。 投影物镜可以具有多个反射镜,其中总长度(T)和物体图像偏移(dOIS)之间的比率小于2。

    Projection objective
    10.
    发明授权
    Projection objective 有权
    投影目标

    公开(公告)号:US08027022B2

    公开(公告)日:2011-09-27

    申请号:US12174131

    申请日:2008-07-16

    IPC分类号: G03B27/42

    CPC分类号: G03F7/70233 G02B17/0657

    摘要: The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods.

    摘要翻译: 本公开涉及用于将物平面中的对象场成像成像面中的图像场的投影物镜。 本公开还涉及包括这种投影物镜的微光刻投影曝光装置。 本公开还涉及使用这种投影曝光装置来制造微结构化或纳米结构化部件(诸如高度集成的半导体部件)的方法。 此外,本公开涉及通过这些方法制造的部件。